Publication Order Number:
FGA25N120ANTDTU/D
©2006 Semiconductor Components Industries, LLC.
October-2017,Rev.3
FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT
FGA25N120ANTDTU
1200 V, 25 A NPT Trench IGBT
Features
• NPT Trench Technology, Positive Temperature Coefficient
• Low Saturation Voltage: VCE(sat), typ = 2.0 V
@ IC = 25 A and TC = 25°C
• Low Switching Loss: Eoff, typ = 0.96 mJ
@ IC = 25 A and TC = 25°C
• Extremely Enhanced Avalanche Capability
Applications
• Induction Heating, Microwave Oven
Description
Using ON Semiconductor's proprietary trench design and
advanced NPT technology, the 1200V NPT IGBT offers
superior conduction and switching performances, high
avalanche ruggedness and easy parallel operation. This
device is well suited for the reso-nant or soft switching
application such as induction heating, microwave oven.
G
C
E
G
C
E
GCE
TO-3P
Absolute Maximum Ratings
Symbol Description Ratings Unit
VCES Collector-Emitter Voltage 1200 V
VGES Gate-Emitter Voltage ± 20 V
IC
Collector Current @ TC = 25°C50 A
Collector Current @ TC = 100°C25 A
ICM (1) Pulsed Collector Current 90 A
IF
Diode Continuous Forward Current @ TC = 25°C50 A
Diode Continuous Forward Current @ TC = 100°C25 A
IFM Diode Maximum Forward Current 150 A
PD
Maximum Power Dissipation @ TC = 25°C312 W
Maximum Power Dissipation @ TC = 100°C125 W
TJ Operating Junction Temperature -55 to +150 °C
Tstg Storage Temperature Range -55 to +150 °C
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300 °C
Notes:
(1) Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol Parameter Typ. Max. Unit
RθJC(IGBT) Thermal Resistance, Junction-to-Case -- 0.4 °C/W
RθJC(DIODE) Thermal Resistance, Junction-to-Case -- 2.0 °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W
FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT
www.onsemi.com
2
Package Marking and Ordering Information
Part Number Top Mark Package Packing
Method Reel Size Tape Width Quantity
FGA25N120ANTDTU-F109 FGA25N120ANTDTU TO-3PN Tube N/A N/A 30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off Characteristics
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V -- -- 3mA
IGES G-E Leakage Current VGE = VGES, VCE = 0 V -- -- ± 250 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 25 mA, VCE = VGE 3.5 5.5 7.5 V
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 25 A, VGE = 15 V -- 2.0 -- V
IC = 25 A, VGE = 15 V,
TC = 125°C
-- 2.15 -- V
IC = 50 A, VGE = 15 V -- 2.65 -- V
Dynamic Characteristics
Cies Input Capacitance VCE = 30 V, VGE = 0 V,
f = 1 MHz
-- 3700 -- pF
Coes Output Capacitance -- 130 -- pF
Cres Reverse Transfer Capacitance -- 80 -- pF
Switching Characteristics
td(on) Turn-On Delay Time
VCC = 600 V, IC = 25 A,
RG = 10 Ω, VGE = 15 V,
Inductive Load, TC = 25°C
-- 50 -- ns
trRise Time -- 60 -- ns
td(off) Turn-Off Delay Time -- 190 -- ns
tfFall Time -- 100 -- ns
Eon Turn-On Switching Loss -- 4.1 -- mJ
Eoff Turn-Off Switching Loss -- 0.96 -- mJ
Ets Total Switching Loss -- 5.06 -- mJ
td(on) Turn-On Delay Time
VCC = 600 V, IC = 25 A,
RG = 10Ω, VGE = 15 V,
Inductive Load, TC = 125°C
-- 50 -- ns
trRise Time -- 60 -- ns
td(off) Turn-Off Delay Time -- 200 -- ns
tfFall Time -- 154 -- ns
Eon Turn-On Switching Loss -- 4.3 -- mJ
Eoff Turn-Off Switching Loss -- 1.5 -- mJ
Ets Total Switching Loss -- 5.8 -- mJ
QgTotal Gate Charge
VCE = 600 V, IC = 25 A,
VGE = 15 V
-- 200 -- nC
Qge Gate-Emitter Charge -- 15 -- nC
Qgc Gate-Collector Charge -- 100 -- nC
FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT
www.onsemi.com
3
Electrical Characteristics of DIODE TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VFM Diode Forward Voltage IF = 25 A TC = 25°C-- 2.0 3.0 V
TC = 125°C-- 2.1 --
trr Diode Reverse Recovery Time
IF = 25 A
diF/dt = 200 A/μs
TC = 25°C-- 235 350 ns
TC = 125°C-- 300 --
Irr
Diode Peak Reverse Recovery Cur-
rent
TC = 25°C-- 27 40 A
TC = 125°C-- 31 --
Qrr Diode Reverse Recovery Charge TC = 25°C-- 3130 4700 nC
TC = 125°C-- 4650 --
FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT
www.onsemi.com
4
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Saturation Voltage
012345
0
20
40
60
80
100
120
Common Emitter
VGE = 15V
TC = 25°C
TC = 125°C
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
0246810
0
20
40
60
80
100
120
140
160
180
10V
9V
8V
7V
20V
17V
15V 12V
VGE = 6V
TC = 25°C
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
Characteristics
Figure 3. Saturation Voltage vs. Case Figure 4. Saturation Voltage vs. VGE
Temperature at Variant Current Level
25 50 75 100 125
1.5
2.0
2.5
3.0
Common Emitter
VGE = 15V
40A
IC = 25A
Collector-Emitter Voltage, VCE [V]
Case Temperature, TC [°C]
0 4 8 12 16 20
0
4
8
12
16
20
40A
25A
Common Emitter
TC = -40°C
IC = 12.5A
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, VGE [V]
Figure 5. Saturation Voltage vs. VGE
0 4 8 12 16 20
0
4
8
12
16
20
40A
25A
Common Emitter
TC = 125°C
IC = 12.5A
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, VGE [V]
0 4 8 12 16 20
0
4
8
12
16
20
40A
25A
Common Emitter
TC = 25°C
IC = 12.5A
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, VGE [V]
Figure 6. Saturation Voltage vs. VGE
FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT
www.onsemi.com
5
Typical Performance Characteristics (Continued)
Figure 7. Capacitance Characteristics Figure 8. Turn-On Characteristics vs. Gate
Resistance
0 10203040506070
10
100
Common Emitter
VCC = 600V, VGE = ±15V
IC = 25A
TC = 25°C
TC = 125°C
td(on)
tr
Switching Time [ns]
Gate Resistance, RG [Ω]
110
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
Ciss
Coss
Common Emitter
VGE = 0V, f = 1MHz
TC = 25°C
Crss
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
Figure 9. Turn-Off Characteristics vs. Figure 10. Switching Loss vs. Gate Resistance
Gate Resistance
0 10203040506070
1
10
Common Emitter
VCC = 600V, VGE = ±15V
IC = 25A
TC = 25°C
TC = 125°C
Eon
Eoff
Switching Loss [mJ]
Gate Resistance, RG [Ω]
0 10203040506070
10
100
1000
Common Emitter
VCC = 600V, VGE = ±15V
IC = 25A
TC = 25°C
TC = 125°C
td(off)
tf
Switching Time [ns]
Gate Resistance, RG [Ω]
Figure 11. Turn-On Characteristics vs. Figure 12. Turn-Off Characteristics vs.
Collector Current Collector Current
10 20 30 40 50
100
Common Emitter
VGE = ±15V, RG = 10Ω
TC = 25°C
TC = 125°C
tr
td(on)
Switching Time [ns]
Collector Current, IC [A]
10 20 30 40 50
100
Common Emitter
VGE = ±15V, RG = 10Ω
TC = 25°C
TC = 125°C
td(off)
tf
Switching Time [ns]
Collector Current, IC [A]
FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT
www.onsemi.com
6
Typical Performance Characteristics (Continued)
Figure 13. Switching Loss vs. Collector Current Figure 14. Gate Charge Characteristics
10 20 30 40 50
0.1
1
10
Common Emitter
VGE = ±15V, RG = 10Ω
TC = 25°C
TC = 125°C
Eon
Eoff
Switching Loss [mJ]
Collector Current, IC [A]
Figure 15. SOA Characteristics Figure 16. Turn-Off SOA
1 10 100 1000
1
10
100
Safe Operating Area
VGE = 15V, TC = 125°C
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
0.1 1 10 100 1000
0.01
0.1
1
10
100
50μs
100μs
1ms
DC Operation
Ic MAX (Pulsed)
Ic MAX (Continuous)
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
Collector Current, Ic [A]
Collector - Emitter Voltage, VCE [V]
Figure 17. Transient Thermal Impedance of IGBT
1
E
-
5
1
E
-
4
1
E
-
3
0
.
0
1
0
.
1
1
1
0
1
E
-
3
0
.
0
1
0
.
11
1
0
0.1
0.5
0.2
0.05
0.02
0.01
single pulse
T
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r
m
a
l
R
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n
s
e
[
Z
t
h
j
c
]
R
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D
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a
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[
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Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT
www.onsemi.com
7
Typical Performance Characteristics (Continued)
Figure 18. Forward Characteristics Figure 19. Reverse Recovery Current
0.1
1
10
50
0.00.40.81.21.62.0
TC = 125°)Χ
TC = 25°)Χ
TJ = 25°)Χ
TJ = 125°)Χ
Forward Voltage , VF [V]
Forward Current , IF [A]
5 10152025
0
5
10
15
20
25
30
diF/dt = 100A/μs
diF/dt = 200A/μs
Reverse Recovery Currnet , Irr [A]
Forward Current , IF [A]
Figure 20. Stored Charge Figure 21. Reverse Recovery Time
5 10152025
0
100
200
300
diF/dt = 100A/μs
diF/dt = 200A/μs
Reverse Recovery Time , trr [ns]
Forward Current , IF [A]
510152025
0
1000
2000
3000
4000
diF/dt = 100A/μs
diF/dt = 200A/μs
Stored Recovery Charge , Q
rr
[nC]
Forward Current , IF [A]
FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT
www.onsemi.com
8
Mechanical Dimensions
Figure 22. TO3PN, 3-Lead, Plastic, EIAJ SC-65
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