PIN CONFIGURATION
Pin 1 – Emitter Pin 2 – Base Pin 3 – Collector
HIGH SPEED SWITCHING BIPOLAR NPN
TRANSISTOR IN A HERMETICALLY
SEALED TO-18 PACKAGE
FEATURES
• SILICON NPN TRANSISTOR
• METAL CASE (JEDEC TO-18)
• HIGH SPEED SWITCHING
APPLICATIONS:
SUITABLE FOR HIGH SPEED SWITCHING
APPLICATIONS
TO-18 (TO-206AA) CASE
MECHANICAL DATA
Dimensions in mm (inches)
2N2221AX
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sal es@ semelab.co.uk Website: http://www.semelab.co.uk Document Number 4055
Issue 1
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO Collector-Base Voltage (IE = 0V) 60V
VCEO Collector-Emitter Voltage (IB = 0V) 40V
VEBO Emitter Base Voltage (IC = 0V) 5V
IC Collector Current 0.8A
Ptot Total Dissipation @ Tamb = 25°C 0.5W
Ptot Total Dissipation @ Tcase = 25°C 1.8W
Tstg Storage Temperature -65 to 200°C
Tj Max Operating Junction Temperature 175°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
13 2
2.54 (0.100)
Nom.
0.48 (0.019)
0.41 (0.016)
dia.
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
5.33 (0.210)
4.32 (0.170)
12.7 (0.500)
min.
2N2221AX
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sal es@ semelab.co.uk Website: http://www.semelab.co.uk Document Number 4055
Issue 1
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter Test Conditions Min. Typ. Max. Unit
ICBO Collector Cutoff Current VCB=50V IE=0V 10 nA
Tamb=150°C 10 µA
IEBO Emitter Cutoff Current VEB=3V IC=0V 10 nA
V(BR)CBO Collector-Base Breakdown Voltage IC=10µA IE=0A 60 V
V(BR)CEO* Collector-Emitter Breakdown Voltage IC=10mA IB=0V 30 V
V(BR)EBO Emitter-Base Breakdown Voltage IE=10µA IC=0V 5 V
VCE(sat)* Collector-Emitter Saturation Voltage IC=150mA IB=15mA 0.4 V
IC=500mA IB=50mA 1.6 V
VBE(sat)* Base-Emitter Saturation Voltage IC=150mA IB=15mA 1.3 V
IC=500mA IB=50mA 2.6 V
IC=0.1mA VCE=10V 20
IC=1mA VCE=10V 25
IC=10mA VCE=10V 35
IC=150mA VCE=10V 40
IC=500mA VCE=10V 20
hFE* DC Current Gain
IC=150mA VCE=1V 20
200
fT Transition Frequency (f=100MHz) IC=20mA VCE=20V 250 MHz
CCBO Collector-Base Capacitance (f=100kHz) IE=0A VCB=10V 8 pF
RthJC Thermal Resistance Junction-Case 83.3
RthJA Thermal Resistance Junction-Ambient 300 °C/W
* Pulsed: Pulse duration = 300µs, duty cycle = 1%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
