Central 2N2920 NPN SILICON DUAL TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2920 is a silicon NPN dual transistor utilizing two individual chips mounted in a hermetically sealed metal case designed for differential amplifier applications. JEDEC TO-78 CASE MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation (One Die) Power Dissipation (Both Die) Power Dissipation (One Die, TC=25C) Power Dissipation (Both Die, TC=25C) Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC PD PD PD PD 60 60 6.0 30 300 500 750 1500 UNITS V V V mA mW mW mW mW TJ,Tstg -65 to +200 C ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=45V 2.0 ICEO VCE=5.0V 2.0 IEBO VEB=5.0V 2.0 BVCBO IC=10A 60 BVCEO IC=10mA 60 BVEBO IE=10A 6.0 VCE(SAT) IC=1.0mA, IB=0.1mA 0.35 VBE(ON) VCE=5.0V, IC=100A 0.70 hFE VCE=5.0V, IC=10A 150 600 hFE VCE=5.0V, IC=10A, TA= -55C 40 hFE VCE=5.0V, IC=100A 225 hFE VCE=5.0V, IC=1.0mA 300 fT VCE=5.0V, IC=500A, f=20MHz 60 UNITS nA nA nA V V V V V MHz R0 (22-February 2007) Central TM 2N2920 Semiconductor Corp. NPN SILICON DUAL TRANSISTORS ELECTRICAL CHARACTERISTICS PER TRANSISTOR (continued): (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS Cob VCB=5.0V, IE=0, f=140kHz 6.0 pF NF VCE=5.0V, IC=10A, RS=10k f=1.0kHz, BW=200Hz 3.0 dB UNITS MATCHING CHARACTERISTICS: SYMBOL TEST CONDITIONS MIN MAX hFE1/hFE2* VCE=5.0V, IC=100A 0.9 1.0 |VBE1-VBE2| VCE=5.0V, IC=10A 5.0 mV |VBE1-VBE2| VCE=5.0V, IC=100A 3.0 mV |VBE1-VBE2| VCE=5.0V, IC=1.0mA 5.0 mV (VBE1-VBE2) VCE=5.0V, IC=100A, TA= -55C to +25C 0.8 mV (VBE1-VBE2) VCE=5.0V, IC=100A, TA= +25C to +125C 1.0 mV * The lowest hFE reading is taken as hFE1 JEDEC TO-78 CASE - MECHANICAL OUTLINE R0 (22-February 2007)