MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current IC200 mA
Power Dissipation PD100 mW
Operating and Storage
Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 1250 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
NPN PNP
SYMBOL TEST CONDITIONS MIN TYP TYP MAX UNITS
ICEV VCE=30V, VEB=3.0V 50 nA
BVCBO IC=10µA 60 115 90 V
BVCEO IC=1.0mA 40 60 55 V
BVEBO IE=10µA 6.0 7.5 7.9 V
VCE(SAT) IC=10mA, IB=1.0mA 0.057 0.050 0.100 V
VCE(SAT)IC=50mA, IB=5.0mA 0.100 0.100 0.200 V
VBE(SAT)IC=10mA, IB=1.0mA 0.650 0.750 0.750 0.850 V
VBE(SAT)IC=50mA, IB=5.0mA 0.850 0.850 0.950 V
CMBT3904E NPN
CMBT3906E PNP
ENHANCED SPECIFICATION
COMPLEMENTARY FEMTOminiTM
SILICON TRANSISTORS
SOT-923 CASE
Central
Semiconductor Corp.
TM
R0 (17-April 2007)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMBT3904E (NPN)
and CMBT3906E (PNP) are general purpose transistors
with enhanced specifications. These devices are ideal
for applications where ultra small size and power
dissipation are the prime requirements. Packaged in the
FEMTOmini™ SOT-923 package, these transistors
provide performance characteristics suitable for the
most demanding size constrained applications.
♦
♦Enhanced specification.
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♦
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♦
FEATURES
• Very Small Package Size
• 200mA Collector Current
• Low VCE(SAT) (0.1V Typ @ 50mA)
• Miniature 0.8 x 0.6 x 0.4mm
Ultra Low height profile
FEMTOmini™Surface Mount Package
MARKING CODES: CMBT3904E: B
CMBT3906E: G
APPLICATIONS
• DC / DC Converters
• Voltage Clamping
• Protection Circuits
• Battery powered applications including:
Cell Phones, Digital Cameras, Pagers,
PDAs, Laptop Computers, etc.
Central
Semiconductor Corp.
TM CMBT3904E NPN
CMBT3906E PNP
ENHANCED SPECIFICATION
COMPLEMENTARY FEMTOminiTM
SILICON TRANSISTORS
R0 (17-April 2007)
NPN PNP
SYMBOL TEST CONDITIONS MIN TYP TYP MAX UNITS
hFE VCE=1.0V, IC=0.1mA 90 240 130
hFE VCE=1.0V, IC=1.0mA 100 235 150
hFE VCE=1.0V, IC=10mA 100 215 150 300
hFE VCE=1.0V, IC=50mA 70 110 120
hFE VCE=1.0V, IC=100mA 30 50 55
fTVCE=20V, IC=10mA, f=100MHz 300 MHz
Cob VCB=5.0V, IE=0, f=1.0MHz 4.0 pF
Cib VBE=0.5V, IC=0, f=1.0MHz 8.0 pF
hie VCE=10V, IC=1.0mA, f=1.0kHz 1.0 12 kΩ
hre VCE=10V, IC=1.0mA, f=1.0kHz 0.1 10 X10-4
hfe VCE=10V, IC=1.0mA, f=1.0kHz 100 400
hoe VCE=10V, IC=1.0mA, f=1.0kHz 1.0 60 µmhos
NF VCE=5.0V, IC=100µA, RS=1.0kΩ, 4.0 dB
f=10Hz to 15.7kHz
tdVCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA 35 ns
trVCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA 35 ns
tsVCC=3.0V, IC=10mA, IB1=IB2=1.0mA 200 ns
tfVCC=3.0V, IC=10mA, IB1=IB2=1.0mA 50 ns
SOT-923 - MECHANICAL OUTLINE
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
♦Enhanced specification.
ELECTRICAL CHARACTERISTICS (continued)
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