LESHAN RADIO COMPANY, LTD.
M12–1/2
1
3
2
General Purpose Transistors
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter V oltage V CEO – 45 Vdc
Collector–Base V oltage V CBO – 60 Vdc
Emitter–Base V oltage V EBO – 5.0 Vdc
Collector Current — Continuous I C– 800 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) PD225 mW
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient RθJA 55 6 °C/W
Total Device Dissipation PD300 mW
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient RθJA 417 °C/W
Junction and Storage Temperature TJ , Tstg –55 to +150 °C
DEVICE MARKING
BCW68GLT1 = DH
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown V oltage (IC = –10 mAdc, IB = 0 ) V (BR)CEO – 45 — — Vdc
Collector–Emitter Breakdown Voltage (IC = –10 µAdc, VEB = 0 ) V (BR)CES – 60 — — Vdc
Emitter–Base Breakdown V oltage ( I E= –10 µAdc, I C = 0) V (BR)EBO – 5.0 — — Vdc
Collector Cutoff Current I CES
(VCE = –45 Vdc, I E= 0 ) — — – 20 nAdc
(VCE = –45 Vdc, I B= 0 , TA = 150°C) — — – 10 µAdc
Emitter Cutoff Current (VEB = – 4.0 Vdc, I C = 0) I EBO — — – 20 nAdc
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
BCW68GLT1
2
EMITTER
3
COLLECTOR
1
BASE
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
LESHAN RADIO COMPANY, LTD.
M12–2/2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain hFE —
( IC= –10 mAdc, VCE = –1.0 Vdc ) 120 — 400
( IC= –100 mAdc, VCE = –1.0 Vdc ) 160 — —
( IC= –300 mAdc, VCE = –1.0 Vdc ) 60 — —
Collector–Emitter Saturation V oltage V CE(sat) — — – 1.5 Vdc
( IC = – 300 mAdc, IB = –30 mAdc )
Base–Emitter Saturation V oltage V BE(sat) — — – 2.0 Vdc
( IC = – 500 mAdc, IB = –50 mAdc )
SMSMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product f T100 — — MHz
(I C = –20mAdc, V CE = –10 Vdc, f = 100 MHz)
Output Capacitance C obo — —18pF
(V CB = – 10 Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance C ibo — — 105 pF
(V EB = –0.5 Vdc, I C = 0, f = 1.0 MHz)
Noise Figure NF — — 10 dB
(V
CE
= – 5.0 Vdc, I
C
= – 0.2 mAdc, R
S
= 1.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
BCW68GLT1
