© Semiconductor Components Industries, LLC, 2011
December, 2011 − Rev. 8
1Publication Order Number:
NGD15N41CL/D
NGD15N41CL,
NGD15N41ACL,
NGB15N41CL,
NGB15N41ACL,
NGP15N41CL,
NGP15N41ACL
Ignition IGBT 15 A, 410 V
N−Channel DPAK, D2PAK and TO−220
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
•Ideal for Coil−on−Plug Applications
•DPAK Package Offers Smaller Footprint and Increased Board Space
•Gate−Emitter ESD Protection
•Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
•Integrated ESD Diode Protection
•New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
•Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
•Low Saturation Voltage
•High Pulsed Current Capability
•Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE)
•These are Pb−Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector−Emitter Voltage VCES 440 VDC
Collector−Gate Voltage VCER 440 VDC
Gate−Emitter Voltage VGE 15 VDC
Collector Current−Continuous
@ TC = 25°C − Pulsed
IC15
50
ADC
AAC
ESD (Human Body Model)
R = 1500 Ω, C = 100 pF
ESD
8.0
kV
ESD (Machine Model) R = 0 Ω, C = 200 pF ESD 800 V
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD107
0.71
Watts
W/°C
Operating and Storage Temperature Range TJ, Tstg −55 to
+175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
15 AMPS
410 VOLTS
VCE(on) 3 2.1 V @
IC = 10 A, VGE . 4.5 V
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
ORDERING INFORMATION
See general marking information in the device marking
section on page 8 of this data sheet.
DEVICE MARKING INFORMATION
TO−220AB
CASE 221A
STYLE 9
123
4
12
3
4D2PAK
CASE 418B
STYLE 4
DPAK
CASE 369C
STYLE 2
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12
3
4
C
E
GRG
RGE
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2
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C)
Characteristic Symbol Value Unit
Single Pulse Collector−to−Emitter Avalanche Energy
VCC = 50 V, VGE = 5.0 V, Pk IL = 16.6 A, L = 1.8 mH, Starting TJ = 25°C
VCC = 50 V, VGE = 5.0 V, Pk IL = 15 A, L = 1.8 mH, Starting TJ = 125°C
EAS
250
200
mJ
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case RθJC 1.4 °C/W
Thermal Resistance, Junction to Ambient DPAK (Note 1) RθJA 100
D2PAK (Note 1) RθJA 50
TO−220 RθJA 62.5
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds TL275 °C
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Test Conditions Temperature Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage BVCES IC = 2.0 mA TJ = −40°C to
150°C
380 410 440 VDC
IC = 10 mA TJ = −40°C to
150°C
380 410 440
Zero Gate Voltage Collector Current ICES
VCE = 350 V,
VGE = 0 V
TJ = 25°C−2.0 20 μADC
TJ = 150°C−10 40*
TJ = −40°C−1.0 10
Reverse Collector−Emitter Leakage Current IECS
VCE = −24 V
TJ = 25°C−0.7 2.0 mA
TJ = 150°C−12 25*
TJ = −40°C−0.1 1.0
Reverse Collector−Emitter Clamp Voltage BVCES(R)
IC = −75 mA
TJ = 25°C 27 33 37 VDC
TJ = 150°C 30 36 40
TJ = −40°C 25 31 35
Gate−Emitter Clamp Voltage BVGES IG = 5.0 mA TJ = −40°C to
150°C
11 13 15 VDC
Gate−Emitter Leakage Current IGES VGE = 10 V TJ = −40°C to
150°C
384 640 1000 μADC
Gate Resistor RG−TJ = −40°C to
150°C
−70 −Ω
Gate Emitter Resistor RGE −TJ = −40°C to
150°C
10 16 26 kΩ
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage VGE(th)
IC = 1.0 mA,
VGE = VCE
TJ = 25°C 1.1 1.4 1.9 VDC
TJ = 150°C 0.75 1.0 1.4
TJ = −40°C 1.2 1.6 2.1*
Threshold Temperature Coefficient
(Negative)
− − − − 3.4 −mV/°C
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. Pulse Test: Pulse Width v 300 μS, Duty Cycle v 2%.
*Maximum Value of Characteristic across Temperature Range.
NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL,
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3
ELECTRICAL CHARACTERISTICS (continued)
Characteristic Symbol Test Conditions Temperature Min Typ Max Unit
ON CHARACTERISTICS (continued) (Note 3)
Collector−to−Emitter On−Voltage VCE(on)
IC = 6.0 A,
VGE = 4.0 V
TJ = 25°C 1.0 1.6 1.8 VDC
TJ = 150°C 0.9 1.5 1.8
TJ = −40°C 1.1 1.65 1.9*
IC = 8.0 A,
VGE = 4.0 V
TJ = 25°C 1.3 1.8 2.0*
TJ = 150°C 1.2 1.7 1.9
TJ = −40°C 1.4 1.8 2.0*
IC = 10 A,
VGE = 4.0 V
TJ = 25°C 1.4 2.0 2.2
TJ = 150°C 1.5 2.0 2.3*
TJ = −40°C 1.4 2.0 2.2
IC = 10 A,
VGE = 4.5 V
TJ = 25°C 1.3 1.9 2.1
TJ = 150°C 1.3 1.9 2.1
TJ = −40°C 1.4 1.95 2.1*
Forward Transconductance gfs VCE = 5.0 V, IC = 6.0 A TJ = −40°C to
150°C
8.0 15 25 Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance CISS
VCC = 25 V, VGE = 0 V
f = 1.0 MHz
TJ = −40°C to
150°C
400 650 1000 pF
Output Capacitance COSS 30 55 100
Transfer Capacitance CRSS 3.0 4.5 8.0
SWITCHING CHARACTERISTICS
Turn−Off Delay Time (Inductive) td(off) VCC = 300 V, IC = 6.5 A
RG = 1.0 kΩ, L = 300 μH
TJ = 25°C−4.0 10 μSec
TJ = 150°C−4.5 10
Fall Time (Inductive) tfVCC = 300 V, IC = 6.5 A
RG = 1.0 kΩ, L = 300 μH
TJ = 25°C−6.0 12
TJ = 150°C−10 12
Turn−Off Delay Time (Resistive) td(off) VCC = 300 V, IC = 6.5 A
RG = 1.0 kΩ, RL = 46 Ω,
TJ = 25°C−3.0 10 μSec
TJ = 150°C−3.5 10
Fall Time (Resistive) tfVCC = 300 V, IC = 6.5 A
RG = 1.0 kΩ, RL = 46 Ω,
TJ = 25°C−8.0 15
TJ = 150°C−12 15
Turn−On Delay Time td(on) VCC = 10 V, IC = 6.5 A
RG = 1.0 kΩ, RL = 1.5 Ω
TJ = 25°C−0.7 4.0 μSec
TJ = 150°C−0.7 4.0
Rise Time trVCC = 10 V, IC = 6.5 A
RG = 1.0 kΩ, RL = 1.5 Ω
TJ = 25°C−4.0 7.0
TJ = 150°C−5.0 7.0
3. Pulse Test: Pulse Width v 300 μS, Duty Cycle v 2%.
*Maximum Value of Characteristic across Temperature Range.
NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL,
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4
TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted)
GATE TO EMITTER VOLTAGE (VOLTS)
0
40
6
10
42
IC, COLLECTOR CURRENT (AMPS)
0
60
20
30
50
813570
40
6
10
42
IC, COLLECTOR CURRENT (AMPS)
0
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics Figure 2. Output Characteristics
0
25
20
15
10
21.51
5
30
0
0.5 2.5 3 3.5
Figure 3. Output Characteristics
VGE, GATE TO EMITTER VOLTAGE (VOLTS)
Figure 4. Transfer Characteristics
IC, COLLECTOR CURRENT (AMPS)
Figure 5. Collector−to−Emitter Saturation
Voltage versus Junction Temperature
Figure 6. Collector−to−Emitter Voltage versus
Gate−to−Emitter Voltage
60
VGE = 10 V
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
20
30
50
81357
5 V
TJ = 25°C TJ = −40°C
VGE = 10 V
5 V
4.5 V
4 V
3.5 V
3 V
2.5 V
TJ = 150°C
4 4.5 5
4.5 V
4 V
3.5 V
3 V
2.5 V
0
40
6
10
42
IC, COLLECTOR CURRENT (AMPS)
0
60
20
30
50
81357
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
TJ = 150°C
VGE = 10 V
5 V
4.5 V
4 V
3.5 V
3 V
2.5 V
2.5
TJ, JUNCTION TEMPERATURE (°C)
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
−50 50 75250 100−25 125
1.0
3.0
0.5
2.0
0.0
3.5
4.0
1.5
150
VGE = 5 V
IC = 25 A
IC = 20 A
IC = 15 A
IC = 10 A
IC = 5 A
2.5
COLLECTOR TO EMITTER VOLTAGE (VOLTS)
3675849
1
0.5
2
0
3
1.5
10
IC = 15 A
IC = 10 A
IC = 5 A
VCE = 10 V
TJ = 25°C
TJ = −40°C
TJ = 25°C
NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL,
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5
TEMPERATURE (°C)
THRESHOLD VOLTAGE (VOLTS)
−50 50 7010−10 90−30 130 150
Mean + 4 σ
Mean − 4 σ
Mean
GATE TO EMITTER VOLTAGE (VOLTS)
1.2
0.2
0
2
0.6
1
1.6
10000
1000
100
10
0
6
4
0
8
10
12
Figure 7. Collector−to−Emitter Voltage versus
Gate−to−Emitter Voltage
Figure 8. Capacitance Variation
Figure 9. Gate Threshold Voltage versus
Temperature
Figure 10. Minimum Open Secondary Latch
Current versus Temperature
TEMPERATURE (°C)
IL, LATCH CURRENT (AMPS)
Figure 11. Typical Open Secondary Latch
Current versus Temperature
VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 12. Inductive Switching Fall Time
versus Temperature
TEMPERATURE (°C)
C, CAPACITANCE (pF)
SWITCHING TIME (μs)
0 120604020 140 180
−50 50 75250 100−25 125
10
20
5
15
0
25
30
TJ = 150°C
175
VCC = 50 V
VGE = 5 V
RG = 1000 Ω
L = 6 mH
20080 100 160
−50 50 7030−10 90−30 130 150
tf
VCC = 300 V
VGE = 5 V
RG = 1000 Ω
IC = 10 A
L = 300 μH
Crss
Ciss
Coss
2.5
3675849
1
0.5
2
0
3
1.5
10
IC = 15 A
IC = 10 A
IC = 5 A
COLLECTOR TO EMITTER VOLTAGE (VOLTS)
1
30 110
0.4
0.8
1.4
1.8
150
L = 3 mH
L = 2 mH
TEMPERATURE (°C)
IL, LATCH CURRENT (AMPS)
−50 50 75250 100−25 125
10
20
5
15
0
25
30
175
VCC = 50 V
VGE = 5 V
RG = 1000 Ω
L = 6 mH
150
L = 3 mH
L = 2 mH
2
10 110
td(off)
NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL,
NGP15N41ACL
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6
0.2
0.00001 0.0010.0001 0.1
10
1
0.01
0.01
t,TIME (S)
R(t), TRANSIENT THERMAL RESISTANCE (°C/Watt)
Single Pulse
110
0.1
0.05
0.02
0.01
100 1000
Duty Cycle = 0.5
0.1
Figure 13. Transient Thermal Resistance
(Non−normalized Junction−to−Ambient mounted on
fixture in Figure 14)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT T1
TJ(pk) − TA = P(pk) RθJA(t)
RθJC ≅ R(t) for t ≤ 0.2 s
4″
1.5″
4″
4″
0.125″
Figure 14. Test Fixture for Transient Thermal Curve
(48 square inches of 1/8, thick aluminum)
NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL,
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7
100
10
0.1
1
0.01
Figure 15. Single Pulse Safe Operating Area
(Mounted on an Infinite Heatsink at TA = 255C)
COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 16. Single Pulse Safe Operating Area
(Mounted on an Infinite Heatsink at TA = 1255C)
COLLECTOR−EMITTER VOLTAGE (VOLTS)
COLLECTOR CURRENT (AMPS)
COLLECTOR CURRENT (AMPS)
1 10010 1000
100
10
0.1
1
0.011 10010 1000
100 μs
10 ms
1 ms
100 ms
DC
100 μs
10 ms
1 ms
100 ms
DC
100
10
0.1
1
0.01
COLLECTOR−EMITTER VOLTAGE (VOLTS) COLLECTOR−EMITTER VOLTAGE (VOLTS)
COLLECTOR CURRENT (AMPS)
COLLECTOR CURRENT (AMPS)
1 10010 1000
100
10
0.1
1
0.011 10010 1000
t1 = 1 ms, D = 0.05
I(pk)
t1
t2
DUTY CYCLE, D = t1/t2
I(pk)
t1
t2
DUTY CYCLE, D = t1/t2
t1 = 2 ms, D = 0.10
t1 = 3 ms, D = 0.30
t1 = 1 ms, D = 0.05
t1 = 2 ms, D = 0.10
t1 = 3 ms, D = 0.30
Figure 17. Pulse Train Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 255C)
Figure 18. Pulse Train Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 1255C)
NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL,
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8
ORDERING INFORMATION
Device Package Type Shipping†
NGD15N41CLT4G DPAK
(Pb−Free) 2500/Tape & Reel
NGD15N41ACLT4G
NGB15N41CLT4G D2PAK
(Pb−Free) 800/Tape & Reel
NGB15N41ACLT4G
NGP15N41CLG TO−220
(Pb−Free) 50 Units/Rail
NGP15N41ACLG
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
MARKING DIAGRAMS
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Device
NGP
15N41CLG
AYWW
1
Gate
3
Emitter
4
Collector
NGB
15N41CLG
AYWW
1
Gate
3
Emitter
4
Collector
2
Collector 2
Collector
TO−220AB
CASE 221A
STYLE 9
D2PAK
CASE 418B
STYLE 4
DPAK
CASE 369C
STYLE 7
1
Gate
4
Collector
2
Collector
3
Emitter
YWW
GD
15N41G
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9
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C−01
ISSUE D
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
b
D
E
b3
L3
L4
b2
eM
0.005 (0.13) C
c2
A
c
C
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
D0.235 0.245 5.97 6.22
E0.250 0.265 6.35 6.73
A0.086 0.094 2.18 2.38
b0.025 0.035 0.63 0.89
c2 0.018 0.024 0.46 0.61
b2 0.030 0.045 0.76 1.14
c0.018 0.024 0.46 0.61
e0.090 BSC 2.29 BSC
b3 0.180 0.215 4.57 5.46
L4 −−− 0.040 −−− 1.01
L0.055 0.070 1.40 1.78
L3 0.035 0.050 0.89 1.27
Z0.155 −−− 3.93 −−−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
12 3
4
5.80
0.228
2.58
0.102
1.60
0.063
6.20
0.244
3.00
0.118
6.17
0.243
ǒmm
inchesǓ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
H0.370 0.410 9.40 10.41
A1 0.000 0.005 0.00 0.13
L1 0.108 REF 2.74 REF
L2 0.020 BSC 0.51 BSC
A1
H
DETAIL A
SEATING
PLANE
A
B
C
L1
L
H
L2 GAUGE
PLANE
DETAIL A
ROTATED 90 CW5
NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL,
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10
PACKAGE DIMENSIONS
STYLE 4:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
D2PAK
CASE 418B−04
ISSUE K
SEATING
PLANE
S
G
D
−T−
M
0.13 (0.005) T
231
4
3 PL
K
J
H
V
E
C
A
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.340 0.380 8.64 9.65
B0.380 0.405 9.65 10.29
C0.160 0.190 4.06 4.83
D0.020 0.035 0.51 0.89
E0.045 0.055 1.14 1.40
G0.100 BSC 2.54 BSC
H0.080 0.110 2.03 2.79
J0.018 0.025 0.46 0.64
K0.090 0.110 2.29 2.79
S0.575 0.625 14.60 15.88
V0.045 0.055 1.14 1.40
−B−
M
B
W
W
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
F0.310 0.350 7.87 8.89
L0.052 0.072 1.32 1.83
M0.280 0.320 7.11 8.13
N0.197 REF 5.00 REF
P0.079 REF 2.00 REF
R0.039 REF 0.99 REF
M
L
F
M
L
F
M
L
F
VARIABLE
CONFIGURATION
ZONE RN P
U
VIEW W−W VIEW W−W VIEW W−W
123
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
8.38
5.080
DIMENSIONS: MILLIMETERS
PITCH
2X
16.155
1.016
2X
10.49
3.504
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PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AF
STYLE 9:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.014 0.025 0.36 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
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NGD15N41CL/D
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