TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/455
T4-LDS-0062 Rev. 1 (081095) Page 1 of 3
DEVICES LEVELS
2N5664 2N5666 2N5667 JAN
2N5665 2N5666S 2N5667S JANTX
2N5666U3 JANTV
JANS
ABSOLUTE MAXIMUM RATI NG S (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol 2N5664
2N5666, S 2N5665
2N5667, S Unit
Collector-Emitter Voltage VCEO 200 300 Vdc
Collector-Base Voltage VCBO 250 400 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Base Current IB 1.0 Adc
Collector Current IC 5.0 Adc
2N5664
2N5665 2N5666, S
2N5667, S 2N5666U3
Total 1/
Power Dissipation
@ TA = +25°C
@ TC = +100°C PT 2.5
30
1.2
15
1.5
35 W
Operating & Storage Junction
Temperature Range TJ, Tstg -65 to +200 °C
Note: 1) Consult 19500/455 for thermal derating curves.
ELECTRICAL CHARACTERISTICS (TC = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 10mAdc 2N5664, 2N5666
2N5665, 2N5667 V(BR)CER 250
400
Vdc
Emitter-Base Breakdown Voltage
IE = 10μAdc V(BR)EBO 6.0
Vdc
Collector-Emitter Cutoff Current
VCE = 200Vdc
VCE = 300Vdc
2N5664, 2N5666
2N5665, 2N5667
ICES 0.2
0.2
μAdc
Collector-Base Cutoff Current
VCB = 200Vdc
VCB = 250Vdc
2N5664, 2N5666 0.1
1.0
μAdc
mAdc
VCB = 300Vdc
VCB = 400Vdc
2N5665, 2N5667
ICBO
0.1
1.0
μAdc
mAdc
TO-66 (TO-213AA)
2N5664, 2N5665
TO-5
2N5666, 2N5667
TO-39 (TO-205AD)
2N5666S, 2N5667S
U-3
2N5666U3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/455
T4-LDS-0062 Rev. 1 (081095) Page 2 of 3
ELECTRICAL CHARACTERISTICS (con’t)
Parameters / Test Conditions Symbol Min. Max. Unit
ON CHARACTERTICS
Forward-Current Transfer Ratio
IC = 0.5Adc, VCE = 2.0Vdc 2N5664, 2N5666
2N5665, 2N5667
40
25
IC = 1.0Adc, VCE = 5.0Vdc 2N5664, 2N5666
2N5665, 2N5667
40
25
120
75
IC = 3.0Adc, VCE = 5.0Vdc 2N5664, 2N5666
2N5665, 2N5667
15
10
IC = 5.0Adc, VCE = 5.0Vdc All Types
hFE
5.0
Collector-Emitter Saturation Voltage
IC = 3.0Adc, IB = 0.3Adc 2N5664, 2N5666 0.4
IC = 3.0Adc, IB = 0.6Adc 2N5665, 2N5667
0.4
IC = 5.0Adc, IB = 1.0Adc All Types
VCE(sat)
1.0
Vdc
Base-Emitter Saturation Voltage
IC = 3.0Adc, IB = 0.3Adc 2N5664, 2N5666 1.2
IC = 3.0Adc, IB = 0.6Adc 2N5665, 2N5667
1.2
IC = 5.0Adc, IB = 1.0Adc All Types
VBE(sat)
1.5
Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
IC = 0.5Adc, VCE = 5.0Vdc, f = 10MHz |hfe| 2.0 7.0
Output Capacitance
VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Cobo 120
pF
SWITCHING CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Turn-On Time
VCC = 100Vdc; IC = 1.0Adc; IB1 = 30mAdc ton 0.25
μs
Turn-Off Time
VCC = 100Vdc; IC = 1.0Adc; IB1 = -IB2 = 50mAdc 2N5664, 2N5666
2N5665, 2N5667
toff 1.5
2.0
μs
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/455
T4-LDS-0062 Rev. 1 (081095) Page 3 of 3
SAFE OPERATING AREA
DC Tests
TC = 100°C, 1 Cycle, t ≥ 1.0s, tr + tf = 10μs
Test 1
VCE = 6.0Vdc, IC = 5.0Adc
VCE = 3.0Vdc, IC = 5.0Adc
2N5664 , 2N5665
2N5666, 2N5667
Test 2
VCE = 32Vdc, IC = 0.75Adc
VCE = 40Vdc, IC = 0.75Adc
VCE = 29Vdc, IC = 0.4Adc
VCE = 37.5Vdc, IC = 0.4Adc
2N5664
2N5665
2N5666
2N5667
Test 3
VCE = 200Vdc, IC = 29mAdc
VCE = 200Vdc, IC = 19mAdc
VCE = 300Vdc, IC = 21mAdc
VCE = 300Vdc, IC = 14mAdc
2N5664
2N5666
2N5665
2N5667
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%
