TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455 DEVICES LEVELS 2N5664 2N5665 2N5666 2N5666S 2N5666U3 2N5667 2N5667S JAN JANTX JANTV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Symbol 2N5664 2N5666, S 2N5665 2N5667, S Unit Collector-Emitter Voltage VCEO 200 300 Vdc Collector-Base Voltage VCBO 250 400 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Base Current IB 1.0 Adc Collector Current IC 5.0 Adc Parameters / Test Conditions Total 1/ Power Dissipation @ TA = +25C @ TC = +100C Operating & Storage Junction Temperature Range PT 2N5664 2N5665 2N5666, S 2N5667, S 2N5666U3 2.5 30 1.2 15 1.5 35 TJ, Tstg -65 to +200 TO-66 (TO-213AA) 2N5664, 2N5665 W C TO-5 2N5666, 2N5667 Note: 1) Consult 19500/455 for thermal derating curves. ELECTRICAL CHARACTERISTICS (TC = +25C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit Collector-Emitter Breakdown Voltage IC = 10mAdc 2N5664, 2N5666 2N5665, 2N5667 V(BR)CER 250 400 Vdc Emitter-Base Breakdown Voltage IE = 10Adc V(BR)EBO 6.0 Vdc OFF CHARACTERTICS Collector-Emitter Cutoff Current VCE = 200Vdc 2N5664, 2N5666 VCE = 300Vdc 2N5665, 2N5667 Collector-Base Cutoff Current VCB = 200Vdc VCB = 250Vdc VCB = 300Vdc VCB = 400Vdc T4-LDS-0062 Rev. 1 (081095) ICES 2N5664, 2N5666 2N5665, 2N5667 ICBO 0.2 0.2 Adc 0.1 1.0 Adc mAdc 0.1 1.0 Adc mAdc TO-39 (TO-205AD) 2N5666S, 2N5667S U-3 2N5666U3 Page 1 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455 ELECTRICAL CHARACTERISTICS (con't) Parameters / Test Conditions Symbol Min. Max. Unit ON CHARACTERTICS Forward-Current Transfer Ratio IC = 0.5Adc, VCE = 2.0Vdc IC = 1.0Adc, VCE = 5.0Vdc 2N5664, 2N5666 2N5665, 2N5667 40 25 2N5664, 2N5666 2N5665, 2N5667 40 25 hFE IC = 3.0Adc, VCE = 5.0Vdc 2N5664, 2N5666 2N5665, 2N5667 15 10 IC = 5.0Adc, VCE = 5.0Vdc All Types 5.0 Collector-Emitter Saturation Voltage IC = 3.0Adc, IB = 0.3Adc 2N5664, 2N5666 120 75 0.4 VCE(sat) IC = 3.0Adc, IB = 0.6Adc 2N5665, 2N5667 IC = 5.0Adc, IB = 1.0Adc All Types 1.0 IC = 3.0Adc, IB = 0.3Adc 2N5664, 2N5666 1.2 IC = 3.0Adc, IB = 0.6Adc 2N5665, 2N5667 IC = 5.0Adc, IB = 1.0Adc All Types 0.4 Vdc Base-Emitter Saturation Voltage VBE(sat) 1.2 Vdc 1.5 DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio IC = 0.5Adc, VCE = 5.0Vdc, f = 10MHz |hfe| 2.0 7.0 Output Capacitance 120 pF Max. Unit ton 0.25 s toff 1.5 2.0 s Cobo VCB = 10Vdc, IE = 0, 100kHz f 1.0MHz SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Turn-On Time VCC = 100Vdc; IC = 1.0Adc; IB1 = 30mAdc Min. Turn-Off Time VCC = 100Vdc; IC = 1.0Adc; IB1 = -IB2 = 50mAdc T4-LDS-0062 Rev. 1 (081095) 2N5664, 2N5666 2N5665, 2N5667 Page 2 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455 SAFE OPERATING AREA DC Tests TC = 100C, 1 Cycle, t 1.0s, tr + tf = 10s Test 1 VCE = 6.0Vdc, IC = 5.0Adc 2N5664 , 2N5665 VCE = 3.0Vdc, IC = 5.0Adc 2N5666, 2N5667 Test 2 VCE = 32Vdc, IC = 0.75Adc 2N5664 VCE = 40Vdc, IC = 0.75Adc 2N5665 VCE = 29Vdc, IC = 0.4Adc 2N5666 VCE = 37.5Vdc, IC = 0.4Adc 2N5667 Test 3 VCE = 200Vdc, IC = 29mAdc 2N5664 VCE = 200Vdc, IC = 19mAdc 2N5666 VCE = 300Vdc, IC = 21mAdc 2N5665 VCE = 300Vdc, IC = 14mAdc 2N5667 (2) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0% T4-LDS-0062 Rev. 1 (081095) Page 3 of 3