BFP740ESD
SiGe:C NPN RF bipolar transistor
Product description
The BFP740ESD is a wideband NPN RF heterojunction bipolar transistor (HBT) with an
integrated ESD protection.
Feature list
• Unique combination of high end RF performance and robustness:
21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits
•NFmin = 0.65 dB at 2.4 GHz and 0.9 dB at 5.5 GHz, 3 V, 6 mA
• High gain Gms = 25.5 dB at 2.4 GHz and Gma = 18.5 dB at 5.5 GHz, 3 V, 25 mA
•OIP3 = 22 dBm at 5.5 GHz, 3 V, 25 mA
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Potential applications
• Wireless communications: WLAN, WiMax and UWB
• Satellite communication systems: GNSS navigation systems (GPS, GLONASS, BeiDou, Galileo), satellite
radio (SDARs, DAB) and C-band LNB
• Multimedia applications such as portable TV, CATV and FM radio
• ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
Device information
Table 1 Part information
Product name / Ordering code Package Pin Configuration Marking Pieces / Reel
BFP740ESD / BFP740ESDH6327XTSA1 SOT343 1 = B 2 = E 3 = C 4 = E T7s 3000
Attention:ESD (Electrostatic discharge) sensitive device, observe handling precautions
Datasheet Please read the Important Notice and Warnings at the end of this document v2.0
www.infineon.com 2018-09-26
Table of contents
Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.1 DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.2 General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.3 Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
3.4 Characteristic DC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3.5 Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4 Package information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
BFP740ESD
SiGe:C NPN RF bipolar transistor
Table of contents
Datasheet 2 v2.0
2018-09-26
1 Absolute maximum ratings
Table 2 Absolute maximum ratings at TA = 25 °C (unless otherwise specified)
Parameter Symbol Values Unit Note or test condition
Min. Max.
Collector emitter voltage VCEO – 4.2 V Open base
3.7 TA = -55 °C, open base
Collector base voltage 1) VCBO 4.9 Open emitter
4.4 TA = -55 °C, open emitter
Collector emitter voltage 2) VCES 4.2 E-B short circuited
3.7 TA = -55 °C,
E-B short circuited
Base current 3) IB-10 5 mA –
Collector current IC– 45
RF input power PRFin – 21 dBm
ESD stress pulse 4) VESD -2 2 kV HBM, all pins, acc. to
JESD22-A114
Total power dissipation5) Ptot – 160 mW TS ≤ 98 °C
Junction temperature TJ– 150 °C –
Storage temperature TStg -55
Attention:Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may aect device
reliability. Exceeding only one of these values may cause irreversible damage to the integrated
circuit.
1Low VCBO due to design.
2VCES is similar to VCEO due to design.
3Sustainable reverse bias current is high due to design
4ESD robustness is high due to design
5TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB.
BFP740ESD
SiGe:C NPN RF bipolar transistor
Absolute maximum ratings
Datasheet 3 v2.0
2018-09-26
2 Thermal characteristics
Table 3 Thermal resistance
Parameter Symbol Values Unit Note or test condition
Min. Typ. Max.
Junction - soldering point RthJS – 325 – K/W –
0 25 50 75 100 125 150
0
20
40
60
80
100
120
140
160
180
TS [°C]
Ptot [mW]
Figure 1 Total power dissipation Ptot = f(TS)
BFP740ESD
SiGe:C NPN RF bipolar transistor
Thermal characteristics
Datasheet 4 v2.0
2018-09-26
3 Electrical characteristics
3.1 DC characteristics
Table 4 DC characteristics at TA = 25 °C
Parameter Symbol Values Unit Note or test condition
Min. Typ. Max.
Collector emitter breakdown voltage V(BR)CEO 4.2 4.7 – V IC = 1 mA, IB = 0,
open base
Collector emitter leakage current ICES – – 400 1) nA VCE = 2 V, VBE = 0,
E-B short circuited
Collector base leakage current ICBO 400 1) VCB = 2 V, IE = 0,
open emitter
Emitter base leakage current IEBO 10 1) μA VEB = 0.5 V, IC = 0,
open collector
DC current gain hFE 160 250 400 VCE = 3 V, IC = 25 mA,
pulse measured
3.2 General AC characteristics
Table 5 General AC characteristics at TA = 25 °C
Parameter Symbol Values Unit Note or test condition
Min. Typ. Max.
Transition frequency fT– 45 – GHz VCE = 3 V, IC = 25 mA,
f = 2 GHz
Collector base capacitance CCB 0.08 pF VCB = 3 V, VBE = 0,
f = 1 MHz,
emitter grounded
Collector emitter capacitance CCE 0.45 VCE = 3 V, VBE = 0,
f = 1 MHz,
base grounded
Emitter base capacitance CEB 0.55 VEB = 0.4 V, VCB = 0,
f = 1 MHz,
collector grounded
1Maximum values not limited by the device but by the short cycle time of the 100% test
BFP740ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
Datasheet 5 v2.0
2018-09-26
3.3 Frequency dependent AC characteristics
Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C.
IN
OUT
Bias-T
Bias-T
B
(Pin 1)
EC
E
VC
Top View
VB
Figure 2 Testing circuit
Table 6 AC characteristics, VCE = 3 V, f = 150 MHz
Parameter Symbol Values Unit Note or test condition
Min. Typ. Max.
Power gain
• Maximum power gain
• Transducer gain
Gms
|S21|2
–
38.5
34
–
dB
IC = 25 mA
Noise figure
• Minimum noise figure
• Associated gain
NFmin
Gass
0.55
30.5
IC = 6 mA
Linearity
• 3rd order intercept point at output
• 1 dB gain compression point at output
OIP3
OP1dB
23.5
9
dBm ZS = ZL = 50 Ω, IC = 25 mA
BFP740ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
Datasheet 6 v2.0
2018-09-26
Table 7 AC characteristics, VCE = 3 V, f = 450 MHz
Parameter Symbol Values Unit Note or test condition
Min. Typ. Max.
Power gain
• Maximum power gain
• Transducer gain
Gms
|S21|2
–
33.5
32
–
dB
IC = 25 mA
Noise figure
• Minimum noise figure
• Associated gain
NFmin
Gass
0.55
28.5
IC = 6 mA
Linearity
• 3rd order intercept point at output
• 1 dB gain compression point at output
OIP3
OP1dB
23.5
9.5
dBm ZS = ZL = 50 Ω, IC = 25 mA
Table 8 AC characteristics, VCE = 3 V, f = 900 MHz
Parameter Symbol Values Unit Note or test condition
Min. Typ. Max.
Power gain
• Maximum power gain
• Transducer gain
Gms
|S21|2
–
30.5
29
–
dB
IC = 25 mA
Noise figure
• Minimum noise figure
• Associated gain
NFmin
Gass
0.55
25.5
IC = 6 mA
Linearity
• 3rd order intercept point at output
• 1 dB gain compression point at output
OIP3
OP1dB
24
9.5
dBm ZS = ZL = 50 Ω, IC = 25 mA
Table 9 AC characteristics, VCE = 3 V, f = 1.5 GHz
Parameter Symbol Values Unit Note or test condition
Min. Typ. Max.
Power gain
• Maximum power gain
• Transducer gain
Gms
|S21|2
–
28
25.5
–
dB
IC = 25 mA
Noise figure
• Minimum noise figure
• Associated gain
NFmin
Gass
0.6
23
IC = 6 mA
Linearity
• 3rd order intercept point at output
• 1 dB gain compression point at output
OIP3
OP1dB
24.5
10
dBm ZS = ZL = 50 Ω, IC = 25 mA
BFP740ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
Datasheet 7 v2.0
2018-09-26
Table 10 AC characteristics, VCE = 3 V, f = 1.9 GHz
Parameter Symbol Values Unit Note or test condition
Min. Typ. Max.
Power gain
• Maximum power gain
• Transducer gain
Gms
|S21|2
–
26.5
24
–
dB
IC = 25 mA
Noise figure
• Minimum noise figure
• Associated gain
NFmin
Gass
0.6
21
IC = 6 mA
Linearity
• 3rd order intercept point at output
• 1 dB gain compression point at output
OIP3
OP1dB
25
10
dBm ZS = ZL = 50 Ω, IC = 25 mA
Table 11 AC characteristics, VCE = 3 V, f = 2.4 GHz
Parameter Symbol Values Unit Note or test condition
Min. Typ. Max.
Power gain
• Maximum power gain
• Transducer gain
Gms
|S21|2
–
25.5
22
–
dB
IC = 25 mA
Noise figure
• Minimum noise figure
• Associated gain
NFmin
Gass
0.65
20
IC = 6 mA
Linearity
• 3rd order intercept point at output
• 1 dB gain compression point at output
OIP3
OP1dB
25
10.5
dBm ZS = ZL = 50 Ω, IC = 25 mA
Table 12 AC characteristics, VCE = 3 V, f = 3.5 GHz
Parameter Symbol Values Unit Note or test condition
Min. Typ. Max.
Power gain
• Maximum power gain
• Transducer gain
Gms
|S21|2
–
23
19
–
dB
IC = 25 mA
Noise figure
• Minimum noise figure
• Associated gain
NFmin
Gass
0.7
16.5
IC = 6 mA
Linearity
• 3rd order intercept point at output
• 1 dB gain compression point at output
OIP3
OP1dB
24.5
10.5
dBm ZS = ZL = 50 Ω, IC = 25 mA
BFP740ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
Datasheet 8 v2.0
2018-09-26
Table 13 AC characteristics, VCE = 3 V, f = 5.5 GHz
Parameter Symbol Values Unit Note or test condition
Min. Typ. Max.
Power gain
• Maximum power gain
• Transducer gain
Gms
|S21|2
–
18.5
14.5
–
dB
IC = 25 mA
Noise figure
• Minimum noise figure
• Associated gain
NFmin
Gass
0.9
13.5
IC = 6 mA
Linearity
• 3rd order intercept point at output
• 1 dB gain compression point at output
OIP3
OP1dB
22
10
dBm ZS = ZL = 50 Ω, IC = 25 mA
Table 14 AC characteristics, VCE = 3 V, f = 10 GHz
Parameter Symbol Values Unit Note or test condition
Min. Typ. Max.
Power gain
• Maximum power gain
• Transducer gain
Gms
|S21|2
–
14.5
7.5
–
dB
IC = 25 mA
Noise figure
• Minimum noise figure
• Associated gain
NFmin
Gass
1.8
8.5
IC = 6 mA
Linearity
• 3rd order intercept point at output
• 1 dB gain compression point at output
OIP3
OP1dB
21
7.5
dBm ZS = ZL = 50 Ω, IC = 25 mA
Note: Gms = IS21 / S12 I for k < 1; Gma = IS21 / S12 I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated in
this chapter the test fixture losses have been subtracted from all measured results. OIP3 value
depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50
Ω
from 0.2 MHz to 12 GHz.
BFP740ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
Datasheet 9 v2.0
2018-09-26
3.4 Characteristic DC diagrams
0
10
20
30
40
50
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VCE[V]
IC[mA]
IB= 5µA
IB= 25µA
IB= 45µA
IB= 65µA
IB= 85µA
IB= 105µA
IB= 125µA
IB= 145µA
IB= 165µA
IB= 185µA
IB= 205µA
IB= 225µA
Figure 3 Collector current vs. collector emitter voltage IC = f(VCE), IB = parameter
100
1000
0.1 1 10 100
IC[mA]
hFE
100
1000
0.1 1 10 100
IC[mA]
hFE
Figure 4 DC current gain hFE = f(IC), VCE = 3 V
BFP740ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
Datasheet 10 v2.0
2018-09-26
0.0001
0.001
0.01
0.1
1
10
100
0.5 0.6 0.7 0.8 0.9
VBE [V]
IC [mA]
Figure 5 Collector current vs. base emitter voltage IC = f(VBE), VCE = 2 V
0.00001
0.0001
0.001
0.01
0.1
1
0.5 0.6 0.7 0.8 0.9
VBE[V]
IB[mA]
Figure 6 Base current vs. base emitter forward voltage IB = f(VBE), VCE = 2 V
BFP740ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
Datasheet 11 v2.0
2018-09-26
1.E-11
1.E-10
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
0.3 0.4 0.5 0.6 0.7 0.8
VEB[V]
IB[A]
Figure 7 Base current vs. base emitter reverse voltage IB = f(VEB), VCE = 2 V
BFP740ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
Datasheet 12 v2.0
2018-09-26
3.5 Characteristic AC diagrams
0 5 10 15 20 25 30 35 40
0
5
10
15
20
25
30
35
40
45
50
IC [mA]
fT [GHz]
3 to 4V
2.5V
2V
1V
Figure 8 Transition frequency fT = f(IC), f = 2 GHz, VCE = parameter
0 5 10 15 20 25 30 35
−5
0
5
10
15
20
25
30
IC [mA]
OIP3 [dBm]
2V, 2.4GHz
3V, 2.4GHz
2V, 5.5GHz
3V, 5.5GHz
Figure 9 3rd order intercept point OIP3 = f(IC), ZS = ZL= 50 Ω, VCE, f = parameters
BFP740ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
Datasheet 13 v2.0
2018-09-26
0 0.5 1 1.5 2 2.5 3 3.5 4
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
VCB [V]
Ccb [pF]
Figure 10 Collector base capacitance CCB = f(VCB), f = 1 MHz
0 1 2 3 4 5 6 7 8 9 10
0
5
10
15
20
25
30
35
40
45
50
f [GHz]
G [dB]
Gms
Gma
|S21|2
Gms
Figure 11 Gain Gma, Gms, IS21I2 = f(f), VCE = 3 V, IC = 25 mA
BFP740ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
Datasheet 14 v2.0
2018-09-26
0 5 10 15 20 25 30 35 40 45
9
12
15
18
21
24
27
30
33
36
39
42
IC [mA]
G [dB]
10.00GHz
5.50GHz
3.50GHz
2.40GHz
1.90GHz
1.50GHz
0.90GHz
0.45GHz
0.15GHz
Figure 12 Maximum power gain Gmax = f(IC), VCE = 3 V, f = parameter in GHz
0 1 2 3 4 5
9
12
15
18
21
24
27
30
33
36
39
42
VCE [V]
G [dB]
10.00GHz
5.50GHz
3.50GHz
2.40GHz
1.90GHz
1.50GHz
0.90GHz
0.45GHz
0.15GHz
Figure 13 Maximum power gain Gmax = f(VCE), IC = 25 mA, f = parameter in GHz
BFP740ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
Datasheet 15 v2.0
2018-09-26
Figure 14 Input reflection coeicient S11 = f(f), VCE = 3 V, IC = 6 / 25 mA
10.1 0.2 0.3 0.4 0.5 21.5 3 4 5
0
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
0.45GHz
0.9GHz
1.9GHz
2.4GHz
5.5GHz
10GHz
Ic = 6.0mA
Ic = 25mA
Figure 15 Source impedance for minimum noise figure Zopt = f(f), VCE = 3 V, IC = 6 / 25 mA
BFP740ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
Datasheet 16 v2.0
2018-09-26
Figure 16 Output reflection coeicient S22 = f(f), VCE = 3 V, IC = 6 / 25 mA
0 2 4 6 8 10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
IC = 6.0mA
IC = 25mA
NFmin [dB]
f [GHz]
Figure 17 Noise figure NFmin = f(f), VCE = 3 V, ZS = ZS,opt, IC = 6 / 25 mA
BFP740ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
Datasheet 17 v2.0
2018-09-26
0 5 10 15 20 25 30
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
f = 1.8GHz
f = 5.5GHz
f = 2.4GHz
f = 0.9GHz
f = 0.45GHz
f = 10GHz
NFmin [dB]
Ic [mA]
Figure 18 Noise figure NFmin = f(IC), VCE = 3 V, ZS = ZS,opt, f = parameter in GHz
0 5 10 15 20 25 30
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Ic [mA]
NF50 [dB]
f = 1.8GHz
f = 5.5GHz
f = 0.45GHz
f = 10GHz
f = 2.4GHz
f = 0.9GHz
Figure 19 Noise figure NF50 = f(IC), VCE = 3 V, ZS = 50 Ω, f = parameter in GHz
Note: The curves shown in this chapter have been generated using typical devices but shall not be
considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C.
BFP740ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
Datasheet 18 v2.0
2018-09-26
4 Package information SOT343
ALL DIMENS IONS ARE IN UNITS MM
THE DRAWING IS IN COMPLIANCE WITH IS O 128 & PROJ ECTION ME THOD 1 [ ]
MOLD FLAS H, P ROTRUS ION OR G ATE BURRS OF 0.2 MM MAXIMUM P ER S IDE ARE NOT INCLUDED
12
43
2±0. 2
0.15
0.6-0 .05
0.3-0 .05
1.3
1.25±0.1
0.9± 0.1
0.1 MAX.
0.15 -0. 05
0.1 MIN.
2.1± 0.1
+0.10
+0.10
+0.10
A
0.1
0.2 A
0.1 3x
0.1
Figure 20 Package outline
Figure 21 Foot print
TYPE CO DE
MONTH
NOTE O F MANUFACTURER
YEAR
Figure 22 Marking layout example
ALL DIME NS IO NS AR E IN UNITS MM
THE D RAWING IS IN C OMP LIANCE WITH ISO 12 8 & P RO J E CTION METHOD 1 [ ]
4
2
8
2.15
0.2
1.1
2.3
INDEX MARKING
P IN 1
Figure 23 Tape dimensions
BFP740ESD
SiGe:C NPN RF bipolar transistor
Package information SOT343
Datasheet 19 v2.0
2018-09-26
Revision history
Document
version
Date of
release
Description of changes
2.0 2018-09-26 New datasheet layout.
BFP740ESD
SiGe:C NPN RF bipolar transistor
Revision history
Datasheet 20 v2.0
2018-09-26
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2018-09-26
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2018 Infineon Technologies AG
All Rights Reserved.
Do you have a question about any
aspect of this document?
Email: erratum@infineon.com
Document reference
IFX-dex1518081280455
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