fiAAMOSPEC NPN SILICON POWER TRANSISTORS ... designed for the output stage of 15VWV to 25W AF power amplifier FEATURES: * Low Coliector-Emitter Saturation Voltage Veg{say= 1-0V(Max) @1,=2.0A,1,=0.2A * DC Current Gain hFE= 40-320@I,= 1.0A * Complementary to PNP 2SB507 MAXIMUM RATINGS NPN 2S8D313 3 AMPERE POWER TRANASISTORS 60 VOLTS 30 WATTS Characteristic Symbol 28D313 Unit Coilector-Emitter Voltage Veeo 60 Vv Collector-Base Voltage Vego 60 Vv Emitter-Base Voltage V 5.0 V 9 EBO TO-220 Collector Current - Continuous Ie 3.0 A ; - Peak lom 8.0 B yr Te 4s Base current lp 1.0 A Le, I _ Total Power Dissipation @T, = 25C Pp 30 Ww plas Derate above 25C 0.24 wrc E c Operating and Storage Junction Ty .Tst C ry D Temperature Range -55 to +150 th nh THERMAL CHARACTERISTICS r Characteristic Symbol Max Unit PN COLLECTOR 3.EMAMTER Thermal Resistance Junction to Case Rjc 4.16 CAN 4.COLLECTOR(CASE) DIM MILLIMETERS FIGURE -1 POWER DERATING MIN MAX 40 A 14.68 | 15.31 35 B 9.78 | 10.42 E Cc 5.01 6.52 = 30 D 13,06 14.62 2 25 E 3.57 4.07 ze F 242 | 3.66 x 20 G 112 | 1.36 8 45 H 0.72 | 096 a I 4.22 498 g 10 J 1.14 1.38 2 K 220 | 297 5 6 L 033 | O55 * 0 M 2.48 2.98 0 25 50 75 100 125 150 O 370 | 390 To, TEMPERATURE( C)2SD313 NPN a ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Voltage VeeEo Vv (I,= 10 mA, I,= 0 ) 60 Collector Cutoff Current lopo uA ( Vop= 20 V, I= 0) 100 Collector Cutoff Current lcEo mA ( Veg= 60 V, Ip= 0) 5.0 Emitter Cutoff Current lego mA ( Vep=4.0 V, 1,= 0) 1.0 ON CHARACTERISTICS (1) DC Current Gain (le= 1.0 A, Vep= 2.0V) * hFE(2) 40 320 (1,= 0.1 A, Vog= 2.0V) hFE 40 Collector-Emitter Saturation Voltage Vee;sat) Vv (1,=2.0A, I,= 200 mA) 1.0 Base-Emitter On Voltage Vae(on) Vv (Ip= 1.0 A, Veg=2.0 V) 1.5 DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product f; MHz (l = 0.5 A, Veg = 5.0 V, f = 1.0 MHz ) 5.0 (1) Pulse Test: Pulse Width =300 ps,Duty Cycle = 2.0% * hFE(2) Classification : [40 c 80 | 60 D 120/100 E 200/160 F 3202SD313 NPN A Ic - Vee DC CURRENT GAIN < z KE 5 a c x e 3 a 8 a F; = 40 2 5 Ia=0 Tex28C 3 10 30 30 40 50 0.01 0.02 0.05 01 02 05 10 20 50 10 : , , lc , COLLECTOR CURRENT (AMP) Ver , COLLECTOR-EMITTER VOLTAGE (V) Ic - Vbe f; - Ic 32 7 / Ver=2.0V . z <= =z Su Vi 70 ke > f 2 o u z 25 ui 2 / 3 T9275 C % x 16) a 25 -~$$++- : // z uy _ i COMMON EMITTER iV, pooyes e 08}-=- fe & Voes5V /, / | 4 : iy | : 4 J | { L A eho LL 6 04 08 12 16 2.0 0.02 0056060102 05 10 20 50 = 10 Vez , BASE - EMITTER VOLTAGE (V) Ic, COLLECTOR CURRENT (A) ACTIVE-REGION SAFE OPERATING AREA (SOA) 10[- = There are two limitation on the power handling ability 5.0 20ms of a transistor:average junction temperature and second N breakdown safe operating area curves indicate Ic-Vce \ NX limits of the transistor that must be observed for reliable 2.0)--- ~Z operation i.e., the transistor must not be subjected to 3 he. greater dissipation than curves indicate. < 10b- a = The data of SOA curve is base on T ypig=150 C:T is z variable depending on conditions. second breakdown & 05) 777 Bonding Wire Limit pulse limits are valid for duty cycles to 10% provided 3 heey ete Tupxs150C,At high case temperatures, thermal limita - oc [ at T ,=28C (Single Puse) tion will reduce the power that can be handled to values ti 0.2---- eee pm less than the limitations imposed by second breakdown. ff | LAI 01 . ~ 4.0 20 30 50 70 10 20 30 50 70 100 Vee , COLLECTOR EMITTER VOLTAGE (VOLTS)