ON Semiconductor MJ802 High-Power NPN Silicon Transistor 30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS . . . for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. * High DC Current Gain -- * * hFE = 25-100 @ IC = 7.5 A Excellent Safe Operating Area Complement to the PNP MJ4502 IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Symbol Value Unit VCER 100 Vdc VCB 100 Vdc VCEO 90 Vdc VEB 4.0 Vdc Collector Current IC 30 Adc Base Current IB 7.5 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 200 1.14 Watts W/C TJ, Tstg -65 to +200 C Symbol Max Unit JC 0.875 C/W Collector-Emitter Voltage Emitter-Base Voltage Operating and Storage Junction Temperature Range CASE 1-07 TO-204AA (TO-3) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case PD, POWER DISSIPATION (WATTS) 200 150 100 50 0 0 20 40 60 80 100 120 140 TC, CASE TEMPERATURE (C) 160 180 200 Figure 1. Power-Temperature Derating Curve Semiconductor Components Industries, LLC, 2001 April, 2001 - Rev. 9 1 Publication Order Number: M J802/D MJ802 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit BVCER 100 -- Vdc VCEO(sus) 90 -- Vdc -- -- 1.0 5.0 OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(1) (IC = 200 mAdc, RBE = 100 Ohms) Collector-Emitter Sustaining Voltage(1) (IC = 200 mAdc) Collector-Base Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TC = 150C) ICBO mAdc Emitter-Base Cutoff Current (VBE = 4.0 Vdc, IC = 0) IEBO -- 1.0 mAdc hFE 25 100 -- Base-Emitter "On" Voltage (IC = 7.5 Adc, VCE = 2.0 Vdc) VBE(on) -- 1.3 Vdc Collector-Emitter Saturation Voltage (IC = 7.5 Adc, IB = 0.75 Adc) VCE(sat) -- 0.8 Vdc Base-Emitter Saturation Voltage (IC = 7.5 Adc, IB = 0.75 Adc) VBE(sat) -- 1.3 Vdc fT 2.0 -- MHz ON CHARACTERISTICS(1) DC Current Gain(1) (IC = 7.5 Adc, VCE = 2.0 Vdc) DYNAMIC CHARACTERISTICS Current Gain -- Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) (1)Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. http://onsemi.com 2 MJ802 2.0 2.0 TJ = 175 C 25C 1.0 0.7 0.5 0.3 0.2 1.0 0.2 0.3 0.5 2.0 3.0 5.0 1.0 0.5 0.2 0.1 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 10 0 0.03 0.05 20 30 VBE @ VCE = 2.0 V VCE(sat) @ IC/IB = 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) Figure 2. DC Current Gain Figure 3. ``On" Voltages 1.0 ms TJ = 200 C 5.0ms SECONDARY BREAKDOWN LIMITED BONDING WIRE LIMITED THERMAL LIMITATIONS TC = 25C PULSE DUTY CYCLE 10% 5.0 10 20 30 2.0 3.0 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 20 30 The Safe Operating Area Curves indicate IC - VCE limits below which the device will not enter secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To insure operation below the maximum TJ, power temperature derating must be observed for both steady state and pulse power conditions. dc 5.0 2.0 1.0 0.2 100 s 10 1.2 IC, COLLECTOR CURRENT (AMP) 100 50 20 1.4 0.4 DATA SHOWN IS OBTAINED FROM PULSE TESTS AND ADJUSTED TO NULLIFY EFFECT OF ICBO. 0.1 TJ = 25C 1.6 VCE = 2.0 V - 55C 0.1 0.03 0.05 IC, COLLECTOR CURRENT (AMP) 1.8 ON" VOLTAGE (VOLTS) hFE, NORMALIZED CURRENT GAIN 3.0 100 Figure 4. Active Region Safe Operating Area http://onsemi.com 3 MJ802 PACKAGE DIMENSIONS CASE 1-07 TO-204AA (TO-3) ISSUE Z A N C -T- E D SEATING PLANE K 2 PL 0.13 (0.005) U T Q M M Y M DIM A B C D E G H K L N Q U V -Y- L V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 2 H G B M T Y 1 -Q- 0.13 (0.005) M INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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