High-Power NPN Silicon
Transistor
. . . for use as an output device in complementary audio amplifiers to
100–Watts music power per channel.
High DC Current Gain —
hFE = 25–100 @ IC = 7.5 A
Excellent Safe Operating Area
Complement to the PNP MJ4502
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Value
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎÎ
ÎÎÎÎÎ
VCER
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
100
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage
ÎÎÎÎÎ
ÎÎÎÎÎ
VCB
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
100
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎÎ
ÎÎÎÎÎ
VCEO
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
90
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage
ÎÎÎÎÎ
ÎÎÎÎÎ
VEB
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
4.0
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current
ÎÎÎÎÎ
ÎÎÎÎÎ
IC
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
30
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current
ÎÎÎÎÎ
ÎÎÎÎÎ
IB
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
7.5
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎ
Total Device Dissipation @ TC = 25°C
Derate above 25C
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
PD
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
200
1.14
ÎÎÎ
Î
Î
Î
ÎÎÎ
Watts
W/C
ÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
Temperature Range
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
TJ, Tstg
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
–65 to +200
ÎÎÎ
Î
Î
Î
ÎÎÎ
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case
ÎÎÎÎÎ
ÎÎÎÎÎ
θJC
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
0.875
ÎÎÎ
ÎÎÎ
C/W
200
150
100
50
040 60 120 140 200
Figure 1. Power–Temperature Derating Curve
TC, CASE TEMPERATURE (°C)
0 20 80 100 160 180
PD, POWER DISSIPATION (WATTS)
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
April, 2001 – Rev. 9 1Publication Order Number:
M J802/D
MJ802
30 AMPERE
POWER TRANSISTOR
NPN SILICON
100 VOLTS
200 WATTS
CASE 1–07
TO–204AA
(TO–3)
MJ802
http://onsemi.com
2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
Min
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Breakdown Voltage(1) (IC = 200 mAdc, RBE = 100 Ohms)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
BVCER
Î
100
ÎÎ
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage(1) (IC = 200 mAdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VCEO(sus)
Î
90
ÎÎ
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TC = 150C)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICBO
Î
ÎÎ
1.0
5.0
ÎÎÎ
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Cutoff Current (VBE = 4.0 Vdc, IC = 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
IEBO
1.0
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain(1) (IC = 7.5 Adc, VCE = 2.0 Vdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
hFE
Î
25
ÎÎ
100
ÎÎÎ
Î
Î
Î
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter “On” Voltage (IC = 7.5 Adc, VCE = 2.0 Vdc)
ÎÎÎÎÎ
ÎÎÎÎÎ
VBE(on)
1.3
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Saturation Voltage (IC = 7.5 Adc, IB = 0.75 Adc)
ÎÎÎÎÎ
ÎÎÎÎÎ
VCE(sat)
0.8
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter Saturation Voltage (IC = 7.5 Adc, IB = 0.75 Adc)
ÎÎÎÎÎ
ÎÎÎÎÎ
VBE(sat)
1.3
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current Gain — Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
fT
2.0
ÎÎÎ
ÎÎÎ
MHz
(1)Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
MJ802
http://onsemi.com
3
hFE, NORMALIZED CURRENT GAIN
IC, COLLECTOR CURRENT (AMP)
TJ = 175° C
3.0
IC, COLLECTOR CURRENT (AMP)
1.0
2.0
0.7
1.0
0.5
0.1
Figure 2. DC Current Gain Figure 3. ‘‘On” Voltages
VBE(sat) @ IC/IB = 10
VCE = 2.0 V
25°C
- 55°C
TJ = 25°C
0.03 0.1 0.2 0.3 0.5 10 20 30
ON" VOLTAGE (VOLTS)
0.3
0.2
0.05 2.0 3.0 5.0
DATA SHOWN IS OBTAINED FROM PULSE TESTS
AND ADJUSTED TO NULLIFY EFFECT OF ICBO.
2.0
1.8
1.4
1.6
1.2
0
1.0
0.8
0.6
0.4
0.2
1.00.03 0.1 0.2 0.3 0.5 10 20 300.05 2.0 3.0 5.0
VBE @ VCE = 2.0 V
VCE(sat) @ IC/IB = 10
IC, COLLECTOR CURRENT (AMP)
50
1.0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
5.0 20
10
1.0
0.2
10
Figure 4. Active Region Safe Operating Area
100
5.0
2.0
0.5
0.1
20
2.0 3.0 1005030
SECONDARY BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATIONS TC = 25°C
PULSE DUTY CYCLE 10%
TJ = 200° C
100 µs
1.0 ms
5.0ms
dc
The Safe Operating Area Curves indicate IC – VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the
applicable Safe Area to avoid causing a catastrophic failure.
To insure operation below the maximum TJ, power
temperature derating must be observed for both steady state
and pulse power conditions.
MJ802
http://onsemi.com
4
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.550 REF 39.37 REF
B--- 1.050 --- 26.67
C0.250 0.335 6.35 8.51
D0.038 0.043 0.97 1.09
E0.055 0.070 1.40 1.77
G0.430 BSC 10.92 BSC
H0.215 BSC 5.46 BSC
K0.440 0.480 11.18 12.19
L0.665 BSC 16.89 BSC
N--- 0.830 --- 21.08
Q0.151 0.165 3.84 4.19
U1.187 BSC 30.15 BSC
V0.131 0.188 3.33 4.77
A
N
E
C
K
–T– SEATING
PLANE
2 PL
D
M
Q
M
0.13 (0.005) Y M
T
M
Y
M
0.13 (0.005) T
–Q–
–Y–
2
1
UL
GB
V
H
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
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