BODY ALSO BACKSIDE CONTACT enhancement-type p-channel MOSFET = Analog and Digital Switching = General Purpose Amplifiers = Smoke Detectors lose (0.078 0.025, (0.635) ALL DIMENSIONS IN INCHES {ALL DIMENSIONS IN MILLIMETERS) TYPE PACKAGE Single TO-18 Single 70-72 Single Chip PERFORMANCE CURVES (25C unless otherwise noted) Output Characteristics : -50 = = V6s q < = E Ves=0 p40 g 5 a w & x s 3 Z% 3 & 5 & 20 qt a- Es 5 t 1 Zz Z- d a 2 2 0 100-2030 40 80. Vps - DRAIN-SOURCE VOLTAGE (VOLTS) Common-Source, Short-Circuit, Low-Level Output Characteristics = -10V -9v ~8V -V ~800 -400 ID(ON) ~ DRAIN ON CURRENT (AMPS) Yfs - FORWARD ADMITTANCE (umhos} 800 1000 o4 O2 9 02 -04 Vos ~ ORAIN-SOURCE VOLTAGE (VOLTS) Common-Source, Short-Circuit, Output Admittance vs Drain Voltage 10K = Ves 20 = & f=1MHz z 5 5 w we es Q 1k Z < e E E z a 8 'D(ON) = -10 mA a EE et > 100 2 5 5 3 3 1 I 3 3 0 0 -10 Vs DRAIN-SOURCE VOLTAGE (VOLTS) 5 -18 -20 -25 = -30 Bs Siliconix BENEFITS: High Gate Transient Voltage Break- down Eliminates Need for Gate Protective Diode Ultra-High Input Impedance Low Leakage Normally OFF PRINCIPAL DEVICES MFE823 3N163-64 3N163-64CHP, MFE823CHP Transfer Characteristic 0 -4 8 ~12 VGs ~ GATE-SOURCE VOLTAGE (VOLTS) -16 -20 Forward Transadmittance vs Drain Current Vps= -15V Ves =90 f= tkHz 10 ~0.01 G1 1.0 ID{on) ORAIN ON CURRENT (mA) -10 Common-Source, Short-Circuit, Output Admittance vs Drain Current Vos = -168 V Vas =0 fe tkHz -10 D {on} DRAIN ON CURRENT (mA) -1.0 -100 5-1 1979 Siliconix incorporated vaw XIUOCOHSMRA iconix PERFORMANCE CURVES (Cont'd) (25C unless otherwise noted) Drain-Source ON Resistance vs Gate-Source Voltage 100K s Rx (OS(ON) ~ STATIC DRAIN-SOURCE ON RESISTANCE (OHMS) 3 a As 100 O -2 4 -G -8 -10 -12 -14-16 -18 -20 Vs - GATE-SOURCE VOLTAGE (VOLTS) Capacitance vs Gate-Source Voltage 3.0 27 24 24 Vos 2-15 V Vas =0 18 ~ f= 1MHz tS 1.2 CAPACITANCE (pF) 09 0.6 0.3 4 - * Vas - GATE-SOQURCE VOLTAGE (VOLTS) Ipiotty/'storF) ORAIN/SOURCE Low-Level ON Drain-Source Voltage vs Gate-Source Voltage = 25 Ip = 0.1 mA 2.0 Ip = 1.0mA Ip = 10 mA Vs DRAIN-SOURCE VOLTAGE {VOLTS} QO -2 -4 -G -8 -10 -12 -14 -16 -18 -20 Vs - GATE-SOURCE VOLTAGE (VOLTS) Drain-Source Leakage Current vs Temperature 100 Fieri Was = Ves =0, Vos =-20 V Igtots) - VGD VBD = 0, VSD = -20 Pte eer = whi L 71 | < = b 2 a Fr ec > oO ig i 9 5 2 oO 01 10 30 50 70 90 110 130 150 TEMPERATURE - C 5-2 1979 Siliconix incorporated