TIP31C - KEC Corporation

1997. 8. 13 1/2

SEMICONDUCTOR

TECHNICAL DATA

TIP31C

TRIPLE DIFFUSED NPN TRANSISTOR

Revision No : 0

GENERAL PURPOSE APPLICATION.

FEATURES

·Complementary to TIP32C.

MAXIMUM RATING (Ta=25℃)

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Collector Emitter Sustaining Voltage VCEO(SUS) IC=30mA, IB=0 100 - - V

Collector Cut-off Current ICEO VCE=60V, IB=0 - - 0.3 mA

Collector Cut-off Current ICES VCE=100V, VEB=0 - - 200 μA

Emitter Cut-off Current IEBO VBE=5V, IC=0 - - 1 mA

DC Current Gain hFE

VCE=4V, IC=1A 25 - -

VCE=4V, IC=3A 10 - 50

Collector-Emitter Saturation Voltage VCE(sat) IC=3A, IB=375mA - - 1.2 V

Base-Emitter On Voltage VBE(on) VCE=4V, IC=3A - - 1.8 V

Transition Frequency fTVCE=10V, IC=500mA f=1MHz 3.0 - - MHz

CHARACTERISTIC SYMBOL RATING UNIT

Collector-Base Voltage VCBO 100 V

Collector-Emitter Voltage VCEO 100 V

Emitter-Base Voltage VEBO 5 V

Collector Current

DC IC3

Pulse ICP 5

Base Current IB1 A

Collector Power

Dissipation

Ta=25℃PC

2 W

Tc=25℃40 W

Junction Temperature Tj150 ℃

Storage Temperature Range Tstg -55～150 ℃