2008. 3. 26 1/3
SEMICONDUCTOR
TECHNICAL DATA
MJE13005F
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 6
SWITCHING REGULATOR APPLICATION.
HIGH VOLTAGE SWITCHING APPLICATION.
HIGH SPEED DC-DC CONVERTER APPLICATION.
FLUORESCENT LIGHT BALLASTOR APPLICATION.
FEATURES
·Excellent Switching Times
: ton=0.8μS(Max.), tf=0.9μS(Max.), at IC=2A
·High Collector Voltage : VCBO=700V.
MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Emitter Cut-off Current IEBO VEB=9V, IC=0 --1mA
DC Current Gain
hFE(1) (Note) VCE=5V, IC=1A 18 - 35
hFE(2) VCE=5V, IC=2A 10 - -
Collector-Emitter
Saturation Voltage VCE(sat)
IC=1A, IB=0.2A - - 0.5
V
IC=2A, IB=0.5A - - 0.6
IC=4A, IB=1A --1
Base-Emitter Saturation Voltage VBE(sat)
IC=1A, IB=0.2A - - 1.2
V
IC=2A, IB=0.5A - - 1.6
Collector Output Capacitance Cob VCB=10V, f=0.1MHz, IE=0 -65-pF
Transition Frequency fTVCE=10V, IC=0.5A 4 - - MHz
Turn-On Time ton - - 0.8 μS
Storage Time tstg --4
μS
Fall Time tf- - 0.9 μS
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 700 V
Collector-Emitter Voltage VCEO 400 V
Emitter-Base Voltage VEBO 9V
Collector Current
DC IC4
A
Pulse ICP 8
Base Current IB2A
Collector Power Dissipation
(Tc=25℃)PC30 W
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55~150 ℃
Note : hFE Classification R:18~27, O:23~35