RECTRON
SEMICONDUCTOR
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
SOT-23
MMBT2222LT1
Dimensions in inches and (millimeters)
2006-3
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
NOTES :
Max. Instantaneous Forward Voltage at IF= 10mA
CHARACTERISTICS SYMBOL UNITS
417
-
Volts
oC/WThermal Resistance Junction to Ambient
RATINGS
Zener Current ( see Table "Characteristics" )
Max. Steady State Power Dissipation (1) @TA=25oC Derate above 25oC
Max. Operating Temperature Range
Storage Temperature Range
SYMBOL
-
PD
TJ
TSTG
R θJA
VF
VALUE
MAX.
-
-
TYP.
-
-
MIN.
UNITS
-
mW
-
300
1. Alumina=0.4*0.3*0.024in. 99.5% alumina.
-55 to +150
-55 to +150
oC
oC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25OC ambient temperature unless otherwise specified.
0.118(3.000)
0.012(0.30)
0.020(0.50)
0.003(0.080)
0.006(0.150)
0.110(2.800)
0.019(2.00)
0.071(1.80)
0.100(2.550)
0.089(2.250)
0.020(0.500)
0.012(0.300)
0.043(1.100)
0.035(0.900)
0.004(0.100)
0.000(0.000)
0.037(0.950)TYP
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
FEATURES
*
*
*
*
Power dissipation
PCM 0.3 W(Tamb=25OC)
Collector current
ICM 0.6 A
Collector-base voltage
V(BR)CBO: 60 V
Operating and storage junction temperature range
TJ,Tstg: -55OCto+150OC
ELECTRICAL CHARACTERISTICS
(@TA=25OC unless otherwise noted)
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL-SIGNAL CHARACTERISTICS
Chatacteristic
Collector-Emitter Breakdown Voltage (IC= 10mAdc, IB= 0)
Collector-Base Breakdown Voltage (IC= 10µAdc, IE= 0)
Emitter-Base Breakdown Voltage (IE= 10µAdc, IC= 0)
Collector Cutoff Current (VCE= 60Vdc,VEB(off)= 3.0Vdc
Collector Cutoff Current (VCB= 60Vdc, IE= 0)
(VCB= 60Vdc, IE= 0, TA= 125OC)
DC Current Gain (IC= 0.1mAdc, VCE= 10Vdc)
Collector-Emitter Saturation Voltage (2) (IC= 150mAdc, IB= 15mAdc)
(IC= 1.0mAdc, VCE= 10Vdc)
(IC= 10mAdc, VCE= 10Vdc)
(IC= 150mAdc, VCE= 10Vdc) (2)
(IC= 500mAdc, VCE= 10Vdc) (2)
V(BR)CEO 30 - Vdc
V(BR)CBO 60 - Vdc
V(BR)EBO 5.0 - Vdc
ICEX
ICBO
- 0.1
- 0.01
- 10
µAdc
Vdc
fT250 - MHz
hFE
35 -
-
50
75
100
30
-
-
-
-
VCE(sat)
-0.4
- 1.6
µAdc
Symbol Min Max Unit
(IC= 500mAdc, IB= 50mAdc)
Base-Emitter Saturation Voltage (2) (IC= 150mAdc, IB= 15mAdc)
Current-Gain-Bandwidth Product (3) (IC= 20mAdc, VCE= 20Vdc, f= 100MHz)
Cibo - 30 pFInput Capacitance (VEB=0.5Vdc, IC= 0, f= 1.0MHz)
VdcVBE(sat)
-1.3
-2.6
(IC= 500mAdc, IB= 50mAdc)
RECTRON
NOTES : 2. Pulse Test: Pulse Width<300µs,Duty Cycle<2.0%
3. fT is defined as the frequency at which |hfe| extrapolates to unity
- -
RECTRON
RATING AND CHARACTERISTICS CURVES ( MMBT2222LT1 )
5.0 7.0 10 20 30 50 70 100 200 300 500
Figure 3.Turn-On Time
IC,CLLECTOR CURRENT(mA)
Figure 4.Turn-Off Time
IC,CLLECTOR CURRENT(mA)
5.0 7.0 10 20 30 50 70 100 200 300 500
20
30
10
7.0
5.0
2.0
3.0
200
100
70
50
t,TIME(ns)
t,TIME(ns)
50
70
30
20
10
5.0
7.0
500
300
200
100
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
IB,BASE CURRENT(mA)
Figure 2. Collector Saturation Region
hFE,DCCURRENT GAIN
01 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 1.0k
IC,CCLLECTOR CURRENT(mA)
Figure 1. DC Current Gain
0.8
0.6
0.4
0.2
0
VCE,COLLECTOR-EMITTER VOLTAGE(VOLTS)
1.0
200
300
500
700
1000
50
30
20
10
100
70
t
r
@V
CC
=30V
t
d
@V
EB
(off)=2.0V
t
d
@V
EB
(off)=0
V
CC
=30V
I
C
/I
B
=10
I
B1
=I
B2
T
J
=25OC
t's=ts-1/8tf
tf
I
C
/I
B
=10
T
J
=25OC
RECTRON
RATING AND CHARACTERISTICS CURVES ( MMBT2222LT1 )
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 5000.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k
IC,COLLECTOR CURRENT(mA)IC,COLLECTOR CURRENT(mA)
Figure 10.Temperature CoefficientsFigure 9."On" Voltages
+0.5
-2.5
-2.0
-1.5
-1.0
-0.5
0
COEFFICIENT(mV/OC)
0
0.2
0.4
0.6
0.8
1.0
V,VOLTAGE(VOLTS)
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 1000.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
REVERSE VOLTAGE(VOLTS) IC,COLLECTOR CURRENT(mA)
Figure 7.Capacitances Figure 8.Currunt-Gain Bandwidth Product
2.0
3.0
5.0
7.0
10
20
CAPACITANCE(PF)
T,CURRENT-GAINBANDWIDTHPRODUCT(MHz)
50
70
300
500
100
200
NT,NOISE FIGURE(dB)
6.0
10
8.0
0
4.0
2.0
30
50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
f,FREQUENCY(KHz) RS,SOURCE RESISTANCE(OHMS)
Figure 5.Frequency Effects Figure 6.Source Resistance Effects
NF,NOISE FIGURE(dB)
6.0
10
8.0
0
4.0
2.0
IC=1.0mA,RS=150Ω
500µΑ,RS=200Ω
100µΑ,RS=2.0KΩ
50µΑ,RS=4.0KΩ
RS=OPTIMUM
SOURCE
RESISTANCE
IC=
50µΑ
100µΑ
500µΑ
1.0mΑ
f=1.0KHz
VCE=20V
TJ=25
O
C
Ceb
C
C
b
TJ=25
O
C
VBE(sat)@IC/IB=10
VBE(on)@VCE=10V
VCE(sat)@IC/IB=10
1.0V
R
θ
VC for VCE(sat)
RθVB for VBE
