C527RT200-S0200 - Cree, Inc.

Subject to change without notice.

www.cree.com

2006, Cree, Inc.

CREE CONFIDENTIAL

RT200 Gen 3 Schematic

PRELIMINARY

CxxxRT200-Sxxxx Chip Diagram

FEATURES

Thin 95 μm Chip

Reduced Forward Voltage

3.0 V Typical at 5 mA

RazerThin LED Performance

460 nm - 10 mW min.

470 nm - 8 mW min.

527 nm - 2 mW min.

Single Wire Bond Structure

Class 2 ESD Rating

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APPLICATIONS

Mobile Phone Key Pads

White LEDs

Blue LEDs

Green LEDs

Cellular Phone LCD Backlighting

Automotive Dashboard Lighting

LED Video Displays

Audio Product Display Lighting

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RazerThin® Gen III LEDs

CxxxRT200-Sxxxx

Cree’s RazerThin LEDs are a new generation of solid-state LED emitters that combine highly efcient InGaN materials

with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity blue and green

LEDs. These vertically structured LED chips are approximately 95 microns in height and require a low forward

voltage. Cree’s RazerThin series chips have the ability to withstand 1000 V ESD.

Data Sheet: CPR3DS Rev. -

Top View Bottom View

G•SiC LED Chip

200 x 200 μm

t = 95 μm

Backside

Metallization

Gold Bond Pad

112 μm Diameter

Die Cross Section

Cathode (-)

Anode (+)

90 μm square

170 x 170 μm

Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.

2CPR3DS Rev. -

Cree, Inc.

4600 Silicon Drive

Durham, NC 27703

USA Tel: +1.919.313.5300

www.cree.com

Maximum Ratings at TA = 25°C Notes 1&3 CxxxRT200-Sxxxx

DC Forward Current 30 mA

Peak Forward Current (1/10 duty cycle @ 1kHz) 100 mA

LED Junction Temperature 125°C

Reverse Voltage 5 V

Operating Temperature Range -40°C to +100°C

Storage Temperature Range -40°C to +100°C

Electrostatic Discharge Threshold (HBM) Note 2 1000 V

Electrostatic Discharge Classication (MIL-STD-883E) Note 2 Class 2

Typical Electrical/Optical Characteristics at TA = 25°C, IF = 5 mA Note 3

Part Number Forward Voltage (Vf, V) Reverse Current

[I(Vr=5V), μA]

Full Width Half Max.

(λD, nm)

Min. Typ. Max. Max. Typ.

C460RT200-Sxxxx 2.7 3.0 3.3 124

C470RT200-Sxxxx 2.7 3.0 3.3 125

C527RT200-Sxxxx 2.7 3.1 3.4 140

Mechanical Specications CxxxRT200-Sxxxx

Description Dimension Tolerance

P-N Junction Area (μm) 150 x 150 ± 35

Top Area (μm) 200 x 200 ± 35

Bottom Area (μm) 170 x 170 ± 35

Chip Thickness (μm) 95 ± 15

Au Bond Pad Diameter (μm) 112 ± 20

Au Bond Pad Thickness (μm) 1.0 ± 0.5

Back Contact Metal Width (μm) 90 ± 10

Notes:

Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy)

for characterization. Seller makes no representations regarding ratings for packages other than the T-1 3/4 package used by Seller.

The forward currents (DC and Peak) are not limited by the G•SiC die but by the effect of the LED junction temperature on the

package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized

in a specic package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).

Product resistance to electrostatic discharge (ESD) is measured by simulating ESD using a rapid avalanche energy test (RAET).

The RAET procedures are designed to approximate the maximum ESD ratings shown. Seller gives no other assurances regarding

the ability of Products to withstand ESD.

All products conform to the listed minimum and maximum specications for electrical and optical characteristics when assembled

and operated at 5 mA within the maximum ratings shown above. Efciency decreases at higher currents. Typical values given are

the average values expected by Seller in large quantities and are provided for information only. Seller gives no assurances products

shipped will exhibit such typical ratings. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000

epoxy). Dominant wavelength measurements taken using Illuminance E.

Specications are subject to change without notice.

Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.

3CPR3DS Rev. -

Cree, Inc.

4600 Silicon Drive

Durham, NC 27703

USA Tel: +1.919.313.5300

www.cree.com

Standard Bins for CxxxRT200-Sxx000

LED chips are sorted to the radiant ux and dominant wavelength bins shown. A sorted die sheet contains die from

only one bin. Sorted die kit (CxxxRT200-Sxx000) orders may be lled with any or all bins (CxxxRT200-xxxx) contained

in the kit. All radiant ux values shown and specied are at IF = 20 mA and dominant wavelength values are at IF = 5

mA.

C460RT200-S1000

C460RT200-0309 C460RT200-0310 C460RT200-0311 C460RT200-0312

C460RT200-0305 C460RT200-0306 C460RT200-0307 C460RT200-0308

C460RT200-0301 C460RT200-0302 C460RT200-0303 C460RT200-0304

14.0 mW

12.0 mW

10.0 mW

Dominant Wavelength

Radiant Flux

457.5 nm 460 nm 462.5 nm455 nm 465 nm

C460RT200-S1200

C460RT200-0309 C460RT200-0310 C460RT200-0311 C460RT200-0312

C460RT200-0305 C460RT200-0306 C460RT200-0307 C460RT200-0308

14.0 mW

12.0 mW

Dominant Wavelength

Radiant Flux

457.5 nm 460 nm 462.5 nm455 nm 465 nm

Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.

4CPR3DS Rev. -

Cree, Inc.

4600 Silicon Drive

Durham, NC 27703

USA Tel: +1.919.313.5300

www.cree.com

Standard Bins for CxxxRT200-Sxx000 (continued)

C470RT200-S1000

C470RT200-0313 C470RT200-0314 C470RT200-0315 C470RT200-0316

C470RT200-0309 C470RT200-0310 C470RT200-0311 C470RT200-0312

C470RT200-0305 C470RT200-0306 C470RT200-0307 C470RT200-0308

14.0 mW

12.0 mW

10.0 mW

Dominant Wavelength

Radiant Flux

467.5 nm 470 nm 472.5 nm465 nm 475 nm

C470RT200-S1200

C470RT200-0313 C470RT200-0314 C470RT200-0315 C470RT200-0316

C470RT200-0309 C470RT200-0310 C470RT200-0311 C470RT200-0312

14.0 mW

12.0 mW

Dominant Wavelength

Radiant Flux

467.5 nm 470 nm 472.5 nm465 nm 475 nm

C470RT200-S0800

C470RT200-0313 C470RT200-0314 C470RT200-0315 C470RT200-0316

C470RT200-0309 C470RT200-0310 C470RT200-0311 C470RT200-0312

C470RT200-0305 C470RT200-0306 C470RT200-0307 C470RT200-0308

C470RT200-0301 C470RT200-0302 C470RT200-0303 C470RT200-0304

14.0 mW

12.0 mW

10.0 mW

8.0 mW

Dominant Wavelength

Radiant Flux

467.5 nm 470 nm 472.5 nm465 nm 475 nm

Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.

5CPR3DS Rev. -

Cree, Inc.

4600 Silicon Drive

Durham, NC 27703

USA Tel: +1.919.313.5300

www.cree.com

Standard Bins for CxxxRT200-Sxx000 (continued)

C527RT200-S0300

C527RT200-0310 C527RT200-0311 C527RT200-0312

C527RT200-0307 C527RT200-0308 C527RT200-0309

C527RT200-0304 C527RT200-0305 C527RT200-0306

5.0 mW

4.0 mW

3.0 mW

Dominant Wavelength

Radiant Flux

525 nm 530 nm 535 nm520 nm

C527RT200-S0400

C527RT200-0310 C527RT200-0311 C527RT200-0312

C527RT200-0307 C527RT200-0308 C527RT200-0309

5.0 mW

4.0 mW

Dominant Wavelength

Radiant Flux

525 nm 530 nm 535 nm520 nm

C527RT200-S0200

C527RT200-0310 C527RT200-0311 C527RT200-0312

C527RT200-0307 C527RT200-0308 C527RT200-0309

C527RT200-0304 C527RT200-0305 C527RT200-0306

C527RT200-0301 C527RT200-0302 C527RT200-0303

5.0 mW

4.0 mW

3.0 mW

2.0 mW

Dominant Wavelength

Radiant Flux

525 nm 530 nm 535 nm520 nm

Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.

6CPR3DS Rev. -

Cree, Inc.

4600 Silicon Drive

Durham, NC 27703

USA Tel: +1.919.313.5300

www.cree.com

Characteristic Curves

These are representative measurements for the RazerThin products. Actual curves will vary slightly for the various

radiant ux and dominant wavelength bins.

-15

-10

-5

0 5 10 15 20 25 30

Shift (nm)

If (mA)

Wavelength Shift vs. Forward Current

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

If (mA)

Vf (V)

Forward Current vs. Forward Voltage

-15

-10

-5

0 5 10 15 20 25 30

Shift (nm)

If (mA)

Wavelength Shift vs. Forward Current

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

If (mA)

Vf (V)

Forward Current vs. Forward Voltage

100%

200%

300%

400%

500%

600%

0 5 10 15 20 25 30

% Intensity

If (mA)

Relative Intensity vs. Forward Current