© 2009 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C40V
VDGR TJ= 25°C to 175°C, RGS = 1MΩ40 V
VGSM Transient ± 20 V
ID25 TC= 25°C (Chip Capability) 600 A
IL(RMS) External Lead Current Limit 160 A
IDM TC= 25°C, Pulse Width Limited by TJM 1600 A
IATC= 25°C 200 A
EAS TC= 25°C3J
PDTC= 25°C 1250 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +175 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-264) 1.13/10 Nm/lb.in.
FCMounting Force (PLUS247) 20..120 /4.5..27 N/lb.
Weight TO-264 10 g
PLUS247 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250µA 40 V
VGS(th) VDS = VGS, ID = 250µA 1.5 3.5 V
IGSS VGS = ± 20V, VDS = 0V ± 200 nA
IDSS VDS = VDSS, VGS= 0V 10 µA
TJ = 150°C 1 mA
RDS(on) VGS = 10V, ID = 100A, Notes 1 & 2 1.5 mΩ
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXTK600N04T2
IXTX600N04T2
VDSS = 40V
ID25 = 600A
RDS(on) ≤≤
≤≤
≤ 1.5mΩΩ
ΩΩ
Ω
DS100209(11/09)
Features
zInternational Standard Packages
zHigh Current Handling Capability
zFast Intrinsic Diode
zAvalanche Rated
zLow RDS(on)
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zDC-DC Converters and Off-Line UPS
zPrimary-Side Switch
zHigh Speed Power Switching
Applications
TrenchT2TM GigaMOSTM
Power MOSFET
Advance Technical Information
G = Gate D = Drain
S = Source Tab = Drain
PLUS247 (IXTX)
TO-264 (IXTK)
S
G
D Tab
Tab
G
S
D
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTK600N04T2
IXTX600N04T2
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 10V, ID = 60A, Note 1 90 150 S
Ciss 40 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 6400 pF
Crss 1470 pF
RGI Gate Input Resistance 1.32 Ω
td(on) 40 ns
tr 20 ns
td(off) 90 ns
tf 250 ns
Qg(on) 590 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS 127 nC
Qgd 163 nC
RthJC 0.12 °C/W
RthCS 0.15 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 600 A
ISM Repetitive, Pulse Width Limited by TJM 1800 A
VSD IF = 100A, VGS = 0V, Note 1 1.2 V
trr 100 ns
IRM 3.3 A
QRM 165 nC
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 200A
RG = 1Ω (External)
IF = 150A, VGS = 0V
-di/dt = 100A/µs
VR = 20V
Notes 1. Pulse test, t ≤ 300µs, duty cycle, d ≤ 2%.
2. Includes lead resistance.
TO-264 (IXTK) Outline
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247TM (IXTX) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
© 2009 IXYS CORPORATION, All Rights Reserved
IXTK600N04T2
IXTX600N04T2
Fi g . 1. Ou tput C har acter i sti cs @ T
J
= 25ºC
0
50
100
150
200
250
300
350
0.0 0.1 0.2 0.3 0.4 0.5
V
DS
- Volts
I
D
- Amperes
V
GS
= 15V
10V
7V
4V
4.5V
5V
6V
Fi g . 3. Ou tp u t C h ar a cter i sti cs @ T
J
= 150ºC
0
50
100
150
200
250
300
350
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
V
DS
- Volts
I
D
- Amperes
V
GS
= 15V
10V
7V
5
V
6
V
3
V
4V
Fig. 4. Normalized R
DS(on)
vs. Ju n cti on Temper atu r e
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I D < 600A
Fi g . 5. N o r mali z ed R
DS(on)
vs. Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0 50 100 150 200 250 300 350
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
15V
T
J
= 175ºC
T
J
= 25ºC
Fi g . 6. D r ai n C u rrent vs. C a se Temp er atu r e
0
20
40
60
80
100
120
140
160
180
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current Limit
Fi g . 2. E xten d ed Ou tp u t C h ar acter i sti cs @ T
J
= 25ºC
0
50
100
150
200
250
300
350
400
0.00.51.01.52.02.53.0
V
DS
- Volts
I
D
- Amperes
V
GS
= 15V
5V
4V
4.5V
10V
7V
6V
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTK600N04T2
IXTX600N04T2
Fig. 7. Input Admi ttance
0
20
40
60
80
100
120
140
160
180
200
2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
GS
- Volts
I
D
- Amperes
T
J
= 150ºC
25ºC
- 40ºC
Fig. 8. T ransconductance
0
40
80
120
160
200
240
0 20 40 60 80 100 120 140 160 180 200
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
150ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diod e
0
50
100
150
200
250
300
350
0.20.30.40.50.60.70.80.91.01.1
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 100 200 300 400 500 600
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 20V
I
D
= 300A
I
G
= 10mA
Fig. 11. Capacitance
0.1
1.0
10.0
100.0
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - NanoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operatin g Area
1
10
100
1,000
10,000
0110100
V
DS
- Volts
I
D
- Amperes
100µs
1ms
10ms
R
DS(on)
Limit
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
100ms
External Lead Limit
DC
25µs
© 2009 IXYS CORPORATION, All Rights Reserved
IXTK600N04T2
IXTX600N04T2
Fi g. 14 . R e si sti ve Tur n- o n R i se Time
vs. D r ain Cu rre n t
0
10
20
30
40
50
60
70
80
90
100
40 60 80 100 120 140 160 180 200
I
D
- Amperes
t
r
- Nanoseconds
T
J
= 25ºC
T
J
= 125ºC
R
G
= 1 , V
GS
= 10V
V
DS
= 20V
Fig. 15. Resist ive Turn-o n Swit ch ing Times
vs. Gate Resist ance
0
100
200
300
400
500
600
12345678910
R
G
- Ohms
t
r
- Nanoseconds
20
40
60
80
100
120
140
t
d
(
on
)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 20V
I
D
= 100A
I
D
= 200A
Fi g . 16. R esi st iv e Turn -o ff Swi t ch i n g Ti mes
vs. Junction Tem perature
0
50
100
150
200
250
300
350
400
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
80
90
100
110
120
130
140
150
160
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1, V
GS
= 10V
V
DS
= 20V
I
D
= 200A
I
D
= 100A
Fig. 17. Resist ive Turn-o ff Swi t ch in g Ti mes
vs. D r ai n Cu r r ent
0
50
100
150
200
250
300
350
400
40 60 80 100 120 140 160 180 200
I
D
- Amperes
t
f
- Nanoseconds
40
60
80
100
120
140
160
180
200
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1, V
GS
= 10V
V
DS
= 20V
T
J
= 125ºC, 25ºC
Fig. 13. Resi stive Tur n - o n Rise Time
vs. Junction Tem perature
0
10
20
30
40
50
60
70
80
90
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 1 , V
GS
= 10V
V
DS
= 20V
I
D
= 200A
I
D
= 100A
Fig . 18. R esistive Tu rn -o ff Switchin g Ti mes
vs. Gate Resistance
0
100
200
300
400
500
600
700
800
12345678910
R
G
- Ohms
t
f
- Nanoseconds
0
100
200
300
400
500
600
700
800
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 20V
I
D
= 200A, 100A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTK600N04T2
IXTX600N04T2
IXYS REF:T_600N04T2(V9)11-05-09
Fig . 19. Maxi mum Trans i en t Ther mal I mp ed a n ce
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
F i g . 19. Max i mu m Tr ansi en t Ther mal I mp edanc e
.sadgsfgsf
0.300
