1N5338B~1N5369B
Zener diode
Features
1. Low profile package
2. Excellent clamping capability
3. Glass passivated junction
4. VZ-tolerance±5%
Applications
Voltage stabilization
Absolute Maximum Ratings
Tj=25℃
Parameter Test Conditions Type Symbol Value Unit
Power dissipation Tamb≤75℃ P
V5 W
Z-current IZPV/VZmA
Junction temperature Tj150 ℃
Storage temperature range Tstg -65~+150 ℃
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
Electrical Characteristics
Tj=25℃
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=1A VF 1.2 V
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1N5338B~1N5369B
VZnom
1)
IZT for Z
zT ZZK @
IZK=1mA
IR @ VRIR
2)
∆VZ
3)
IZM
4)
Type
V mA Ω Ω μA V A V mA
1N5338B 5.1 240 1.5 400 1 1 14.4 0.39 930
1N5339B 5.6 220 1 400 1 2 13.4 0.25 865
1N5340B 6.0 200 1 300 1 3 12.7 0.19 790
1N5341B 6.2 200 1 200 1 3 12.4 0.1 765
1N5342B 6.8 175 1 200 10 5.2 11.5 0.15 700
1N5343B 7.5 175 1.5 200 10 5.7 10.7 0.15 630
1N5344B 8.2 150 1.5 200 10 6.2 10 0.2 580
1N5345B 8.7 150 2 200 10 6.6 9.5 0.2 545
1N5346B 9.1 150 2 150 7.5 6.9 9.2 0.22 520
1N5347B 10 125 2 125 5 7.6 8.6 0.22 475
1N5348B 11 125 2.5 125 5 8.4 8 0.25 430
1N5349B 12 100 2.5 125 2 9.1 7.5 0.25 395
1N5350B 13 100 2.5 100 1 9.9 7 0.25 365
1N5351B 14 100 2.5 75 1 10.6 6.7 0.25 340
1N5352B 15 75 2.5 75 1 11.5 6.3 0.25 315
1N5353B 16 75 2.5 75 1 12.2 6 0.3 295
1N5354B 17 70 2.5 75 0.5 12.9 5.8 0.35 280
1N5355B 18 65 2.5 75 0.5 13.7 5.5 0.4 265
1N5356B 19 65 3 75 0.5 14.4 5.3 0.4 250
1N5357B 20 65 3 75 0.5 15.2 5.1 0.4 237
1N5358B 22 50 3.5 75 0.5 16.7 4.7 0.45 216
1N5359B 24 50 3.5 100 0.5 18.2 4.4 0.55 198
1N5360B 25 50 4 110 0.5 19 4.3 0.55 190
1N5361B 27 50 5 120 0.5 20.6 4.1 0.6 176
1N5362B 28 50 6 130 0.5 21.2 3.9 0.6 170
1N5363B 30 40 8 140 0.5 22.8 3.7 0.6 158
1N5364B 33 40 10 150 0.5 25.1 3.5 0.6 144
1N5365B 36 30 11 160 0.5 27.4 3.3 0.65 132
1N5366B 39 30 14 170 0.5 29.7 3.1 0.65 122
1N5367B 43 30 20 190 0.5 32.7 2.8 0.7 110
1N5368B 47 25 25 210 0.5 35.8 2.7 0.8 100
1N5369B 51 25 27 230 0.5 38.8 2.5 0.9 93
1) Zener voltage (Vz): Based on DC-measurement at thermal equilibrium while maintaining the lead temperature (TL) at
25 ,℃ 9.5mm (3/8”) from the diode body.
2) Surge current (IR) is specified as the maximum allowable peak, non-recurrent square-wave current with a plus width,
PW, of 8.3 ms.
3) Voltage regulation (∆VZ): Test conditions for voltage regulation are as below, Vz measurements are made at 10% and
then at 50% of the Iz max value listed in the electrical characteristics table. The test current time duration for each Vz
measurements is 40±10 ms. (TA=25℃ +8, -2℃)
4) Maximum regulator current (IZM): The maximum current shown is based on the maximum voltage of a 5% type unit;
therefore, it applies only to the B-suffix device. The actual IZM for any device may not exceed the value of 5 watts
divided by the actual Vz of the device. TL=75℃ at 9.5mm (3/8”) from the diode body.
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1N5338B~1N5369B
Dimensions in mm
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX
A 1.000 --- 25.40 ---
B 0.230 0.300 5.80 7.60
C 0.026 0.034 0.70 0.90
D 0.104 0.140 2.60 3.60
Cathode identification
Case: molded plastic DO-15
Polarity: cathode band
Marking: type number
Marking
1N5339B
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