Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - (c) NXP N.V. (year). All rights reserved or (c) Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - (c) Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia 74HC08-Q100; 74HCT08-Q100 Quad 2-input AND gate Rev. 1 -- 16 July 2012 Product data sheet 1. General description The 74HC08-Q100; 7 4HCT08-Q100 is a quad 2-input AND gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC. This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications. 2. Features and benefits Automotive product qualification in accordance with AEC-Q100 (Grade 1) Specified from 40 C to +85 C and from 40 C to +125 C Complies with JEDEC standard JESD7A Complies with JEDEC standard JESD8-1A Input levels: For 74HC08-Q100: CMOS level For 74HCT08-Q100: TTL level ESD protection: MIL-STD-883, method 3015 exceeds 2000 V HBM JESD22-A114F exceeds 2000 V MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 ) Multiple package options 3. Ordering information Table 1. Ordering information Type number 74HC08D-Q100 Package Temperature range Name Description Version 40 C to +125 C SO14 plastic small outline package; 14 leads; body width 3.9 mm SOT108-1 40 C to +125 C TSSOP14 plastic thin shrink small outline package; 14 leads; body width 4.4 mm SOT402-1 40 C to +125 C DHVQFN14 plastic dual in-line compatible thermal enhanced very thin quad flat package; no leads; 14 terminals; body 2.5 3 0.85 mm SOT762-1 74HCT08D-Q100 74HC08PW-Q100 74HCT08PW-Q100 74HC08BQ-Q100 74HCT08BQ-Q100 74HC08-Q100; 74HCT08-Q100 NXP Semiconductors Quad 2-input AND gate 4. Functional diagram 1 & 3 & 6 & 8 2 4 1 1A 2 1B 4 2A 5 2B 9 3A 10 3B 12 4A 13 4B 1Y 3 5 2Y 6 9 10 3Y 8 4Y 11 A 12 & Y 11 13 B mna222 Fig 1. mna221 mna223 Logic symbol Fig 2. IEC logic symbol Fig 3. Logic diagram (one gate) 5. Pinning information 5.1 Pinning $ WHUPLQDO LQGH[DUHD 9&& +&4 +&74 +&4 +&74 9&& % % % % < $ < $ $ < $ $ *1' < < % < < *1' < % *1' % $ % $ DDD 7UDQVSDUHQWWRSYLHZ DDD (1) The die substrate is attached to this pad using conductive die attach material. It cannot be used as a supply pin or input. Fig 4. Pin configuration DIP14, SO14 and (T)SSOP14 74HC_HCT08_Q100 Product data sheet Fig 5. Pin configuration DHVQFN14 All information provided in this document is subject to legal disclaimers. Rev. 1 -- 16 July 2012 (c) NXP B.V. 2012. All rights reserved. 2 of 14 74HC08-Q100; 74HCT08-Q100 NXP Semiconductors Quad 2-input AND gate 5.2 Pin description Table 2. Pin description Symbol Pin Description 1A to 4A 1, 4, 9, 12 data input 1B to 4B 2, 5, 10,13 data input 1Y to 4Y 3, 6, 8, 11 data output GND 7 ground (0 V) VCC 14 supply voltage 6. Functional description Table 3. Function table[1] Input Output nA nB L L L L H L H L L H H H [1] nY H = HIGH voltage level; L = LOW voltage level; X = don't care. 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter VCC supply voltage Conditions IIK input clamping current VI < 0.5 V or VI > VCC + 0.5 V IOK output clamping current VO < 0.5 V or VO > VCC + 0.5 V IO output current 0.5 V < VO < VCC + 0.5 V - 25 mA ICC supply current - 50 mA IGND ground current 50 - mA Tstg storage temperature 65 +150 C Max Unit 0.5 +7 V [1] - 20 mA [1] - 20 mA - 500 mW [2] total power dissipation Ptot Min [1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] For SO14 package: Ptot derates linearly with 8 mW/K above 70 C. For TSSOP14 packages: Ptot derates linearly with 5.5 mW/K above 60 C. For DHVQFN14 packages: Ptot derates linearly with 4.5 mW/K above 60 C. 74HC_HCT08_Q100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 16 July 2012 (c) NXP B.V. 2012. All rights reserved. 3 of 14 74HC08-Q100; 74HCT08-Q100 NXP Semiconductors Quad 2-input AND gate 8. Recommended operating conditions Table 5. Recommended operating conditions Voltages are referenced to GND (ground = 0 V) Symbol Parameter Conditions 74HC08-Q100 Min Typ 74HCT08-Q100 Max Min Typ Unit Max VCC supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V VI input voltage 0 - VCC 0 - VCC V VO output voltage 0 - VCC 0 - VCC V Tamb ambient temperature 40 - +125 40 - +125 C t/V input transition rise and fall rate VCC = 2.0 V - - 625 - - - ns/V VCC = 4.5 V - 1.67 139 - 1.67 139 ns/V VCC = 6.0 V - - 83 - - - ns/V 9. Static characteristics Table 6. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter 25 C Conditions Min Typ VCC = 2.0 V 1.5 VCC = 4.5 V 40 C to +85 C 40 C to +125 C Unit Max Min Max Min Max 1.2 - 1.5 - 1.5 - V 3.15 2.4 - 3.15 - 3.15 - V VCC = 6.0 V 4.2 3.2 - 4.2 - 4.2 - V VCC = 2.0 V - 0.8 0.5 - 0.5 - 0.5 V VCC = 4.5 V - 2.1 1.35 - 1.35 - 1.35 V VCC = 6.0 V - 2.8 1.8 - 1.8 - 1.8 V IO = 20 A; VCC = 2.0 V 1.9 2.0 - 1.9 - 1.9 - V IO = 20 A; VCC = 4.5 V 4.4 4.5 - 4.4 - 4.4 - V IO = 20 A; VCC = 6.0 V 5.9 6.0 - 5.9 - 5.9 - V IO = 4.0 mA; VCC = 4.5 V 3.98 4.32 - 3.84 - 3.7 - V IO = 5.2 mA; VCC = 6.0 V 5.48 5.81 - 5.34 - 5.2 - V IO = 20 A; VCC = 2.0 V - 0 0.1 - 0.1 - 0.1 V IO = 20 A; VCC = 4.5 V - 0 0.1 - 0.1 - 0.1 V IO = 20 A; VCC = 6.0 V - 0 0.1 - 0.1 - 0.1 V IO = 4.0 mA; VCC = 4.5 V - 0.15 0.26 - 0.33 - 0.4 V IO = 5.2 mA; VCC = 6.0 V - 0.16 0.26 - 0.33 - 0.4 V 74HC08-!00 VIH VIL VOH VOL HIGH-level input voltage LOW-level input voltage HIGH-level output voltage LOW-level output voltage VI = VIH or VIL VI = VIH or VIL II input leakage current VI = VCC or GND; VCC = 6.0 V - - 0.1 - 1 - 1 A ICC supply current VI = VCC or GND; IO = 0 A; VCC = 6.0 V - - 2.0 - 20 - 40 A 74HC_HCT08_Q100 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 16 July 2012 (c) NXP B.V. 2012. All rights reserved. 4 of 14 74HC08-Q100; 74HCT08-Q100 NXP Semiconductors Quad 2-input AND gate Table 6. Static characteristics ...continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter 25 C Conditions Min CI input capacitance Typ 40 C to +85 C 40 C to +125 C Unit Max Min Max Min Max - 3.5 - - - - - pF 74HCT08-Q100 VIH HIGH-level input voltage VCC = 4.5 V to 5.5 V 2.0 1.6 - 2.0 - 2.0 - V VIL LOW-level input voltage VCC = 4.5 V to 5.5 V - 1.2 0.8 - 0.8 - 0.8 V VOH HIGH-level output voltage VI = VIH or VIL; VCC = 4.5 V IO = 20 A 4.4 4.5 - 4.4 - 4.4 - V IO = 4.0 mA 3.98 4.32 - 3.84 - 3.7 - V LOW-level output voltage VI = VIH or VIL; VCC = 4.5 V IO = 20 A - 0 0.1 - 0.1 - 0.1 V IO = 5.2 mA - 0.15 0.26 - 0.33 - 0.4 V VOL II input leakage current VI = VCC or GND; VCC = 5.5 V - - 0.1 - 1 - 1 A ICC supply current VI = VCC or GND; IO = 0 A; VCC = 5.5 V - - 2.0 - 20 - 40 A ICC additional supply current per input pin; VI = VCC 2.1 V; IO = 0 A; other inputs at VCC or GND; VCC = 4.5 V to 5.5 V - 60 216 - 270 - 294 A CI input capacitance - 3.5 - - - - - pF 10. Dynamic characteristics Table 7. Dynamic characteristics GND = 0 V; CL = 50 pF; for load circuit see Figure 7. Symbol Parameter 25 C Conditions 40 C to +125 C Unit Min Typ Max Max (85 C) Max (125 C) - 25 90 115 135 74HC08-Q100 tpd propagation delay nA, nB to nY; see Figure 6 [1] VCC = 2.0 V VCC = 4.5 V - 9 18 23 27 ns VCC = 5.0 V; CL = 15 pF - 7 - - - ns - 7 15 20 23 ns VCC = 6.0 V tt transition time 74HC_HCT08_Q100 Product data sheet ns see Figure 6 [2] VCC = 2.0 V - 19 75 95 110 ns VCC = 4.5 V - 7 15 19 22 ns VCC = 6.0 V - 6 13 16 19 ns All information provided in this document is subject to legal disclaimers. Rev. 1 -- 16 July 2012 (c) NXP B.V. 2012. All rights reserved. 5 of 14 74HC08-Q100; 74HCT08-Q100 NXP Semiconductors Quad 2-input AND gate Table 7. Dynamic characteristics GND = 0 V; CL = 50 pF; for load circuit see Figure 7. Symbol Parameter CPD 25 C Conditions power dissipation capacitance 40 C to +125 C Unit Min Typ Max Max (85 C) Max (125 C) - 10 - - - VCC = 4.5 V - 14 24 30 36 ns VCC = 5.0 V; CL = 15 pF - 11 - - - ns [3] per package; VI = GND to VCC pF 74HCT08-Q100 [1] propagation delay nA, nB to nY; see Figure 6 tpd transition time tt power dissipation capacitance CPD VCC = 4.5 V; see Figure 6 [2] - 7 15 19 22 ns per package; VI = GND to VCC 1.5 V [3] - 20 - - - pF [1] tpd is the same as tPHL and tPLH. [2] tt is the same as tTHL and tTLH. [3] CPD is used to determine the dynamic power dissipation (PD in W): PD = CPD VCC2 fi N + (CL VCC2 fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; (CL VCC2 fo) = sum of outputs. 11. Waveforms 9, Q$Q%LQSXW 90 *1' W3+/ 92+ 9< Q