/TechnicalInformation IGBT- IGBT-modules FF200R12KT3 62mmC-SerienModulmitschnellemTrench/FeldstopIGBT3undEmitterControlledHighEfficiencyDiode 62mmC-seriesmodulewithfasttrench/fieldstopIGBT3andEmitterControlledHighEfficiencydiode IGBT,/IGBT,Inverter /MaximumRatedValues Collector-emittervoltage Tvj = 25C VCES 1200 V ContinuousDCcollectorcurrent TC = 80C, Tvj max = 150C TC = 25C, Tvj max = 150C IC nom IC 200 295 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 400 A Totalpowerdissipation TC = 25C, Tvj max = 150 Ptot 1050 W Gate-emitterpeakvoltage VGES +/-20 V /CharacteristicValues min. Collector-emittersaturationvoltage IC = 200 A, VGE = 15 V IC = 200 A, VGE = 15 V Gatethresholdvoltage IC = 8,00 mA, VCE = VGE, Tvj = 25C Gatecharge Tvj = 25C Tvj = 125C VCE sat A A typ. max. 1,70 1,90 2,15 V V VGEth 5,0 5,8 6,5 V VGE = -15 V ... +15 V QG 1,90 C Internalgateresistor Tvj = 25C RGint 3,8 Inputcapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 14,0 nF Reversetransfercapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,50 nF - Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA - Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA () Turn-ondelaytime,inductiveload IC = 200 A, VCE = 600 V VGE = 15 V RGon = 3,6 Tvj = 25C Tvj = 125C td on 0,16 0,17 s s () Risetime,inductiveload IC = 200 A, VCE = 600 V VGE = 15 V RGon = 3,6 Tvj = 25C Tvj = 125C tr 0,04 0,045 s s () Turn-offdelaytime,inductiveload IC = 200 A, VCE = 600 V VGE = 15 V RGoff = 3,6 Tvj = 25C Tvj = 125C td off 0,45 0,52 s s () Falltime,inductiveload IC = 200 A, VCE = 600 V VGE = 15 V RGoff = 3,6 Tvj = 25C Tvj = 125C tf 0,10 0,16 s s () Turn-onenergylossperpulse IC = 200 A, VCE = 600 V, LS = 30 nH VGE = 15 V, di/dt = 4000 A/s RGon = 3,6 Tvj = 25C Tvj = 125C Eon 10,0 15,0 mJ mJ ( Turn-offenergylossperpulse IC = 200 A, VCE = 600 V, LS = 30 nH VGE = 15 V, du/dt = 4500 V/s RGoff = 3,6 Tvj = 25C Tvj = 125C Eoff 16,5 25,0 mJ mJ SCdata VGE 15 V, VCC = 900 V VCEmax = VCES -LsCE *di/dt ISC Thermalresistance,junctiontocase IGBT/perIGBT RthJC Thermalresistance,casetoheatsink IGBT/perIGBT Paste=1W/(m*K)/grease=1W/(m*K) RthCH 0,03 Temperatureunderswitchingconditions Tvj op -40 preparedby:MK dateofpublication:2013-10-03 approvedby:WR revision:3.0 1 tP 10 s, Tvj = 125C 800 A 0,12 K/W K/W 125 C /TechnicalInformation IGBT- IGBT-modules FF200R12KT3 ,/Diode,Inverter /MaximumRatedValues Repetitivepeakreversevoltage Tvj = 25C ContinuousDCforwardcurrent Repetitivepeakforwardcurrent tP = 1 ms I2t- It-value VR = 0 V, tP = 10 ms, Tvj = 125C VRRM 1200 V IF 200 A IFRM 400 A It 7800 As /CharacteristicValues min. typ. max. 1,65 1,65 2,15 Forwardvoltage IF = 200 A, VGE = 0 V IF = 200 A, VGE = 0 V Tvj = 25C Tvj = 125C VF Peakreverserecoverycurrent IF = 200 A, - diF/dt = 4000 A/s (Tvj=125C) Tvj = 25C VR = 600 V Tvj = 125C VGE = -15 V IRM 150 190 A A Recoveredcharge IF = 200 A, - diF/dt = 4000 A/s (Tvj=125C) Tvj = 25C VR = 600 V Tvj = 125C VGE = -15 V Qr 20,0 36,0 C C Reverserecoveryenergy IF = 200 A, - diF/dt = 4000 A/s (Tvj=125C) Tvj = 25C VR = 600 V Tvj = 125C VGE = -15 V Erec 9,00 17,0 mJ mJ Thermalresistance,junctiontocase /perdiode RthJC Thermalresistance,casetoheatsink /perdiode Paste=1W/(m*K)/grease=1W/(m*K) RthCH 0,06 Temperatureunderswitchingconditions Tvj op -40 preparedby:MK dateofpublication:2013-10-03 approvedby:WR revision:3.0 2 V V 0,20 K/W K/W 125 C /TechnicalInformation IGBT- IGBT-modules FF200R12KT3 /Module Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. Materialofmodulebaseplate Internalisolation (class1,IEC61140) basicinsulation(class1,IEC61140) Creepagedistance VISOL 2,5 kV Cu Al2O3 -/terminaltoheatsink -/terminaltoterminal 29,0 23,0 mm Clearance -/terminaltoheatsink -/terminaltoterminal 23,0 11,0 mm Comperativetrackingindex CTI > 400 Thermalresistance,casetoheatsink /permodule Paste=1W/(m*K)/grease=1W/(m*K) , Strayinductancemodule ,- Moduleleadresistance,terminals-chip TC=25C,/perswitch Storagetemperature Mountingtorqueformodulmounting min. typ. RthCH 0,01 LsCE 20 nH RCC'+EE' 0,70 m Tstg -40 125 C M6 ScrewM6-Mountingaccordingtovalidapplicationnote M 3,00 - 6,00 Nm Terminalconnectiontorque M6 ScrewM6-Mountingaccordingtovalidapplicationnote M 2,5 - 5,0 Nm Weight G 340 g preparedby:MK dateofpublication:2013-10-03 approvedby:WR revision:3.0 3 max. K/W /TechnicalInformation IGBT- IGBT-modules FF200R12KT3 IGBT,) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V IGBT,) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=125C 400 400 Tvj = 25C Tvj = 125C 320 320 280 280 240 240 200 200 160 160 120 120 80 80 40 40 0 0,0 0,5 1,0 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 360 IC [A] IC [A] 360 1,5 VCE [V] 2,0 2,5 0 3,0 IGBT,() transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 5,0 IGBT,) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=15V,RGon=3.6,RGoff=3.6,VCE=600V 400 60 Tvj = 25C Tvj = 125C 360 Eon, Tvj = 125C Eoff, Tvj = 125C 50 320 280 40 E [mJ] IC [A] 240 200 30 160 20 120 80 10 40 0 5 6 7 8 9 VGE [V] 10 11 0 12 preparedby:MK dateofpublication:2013-10-03 approvedby:WR revision:3.0 4 0 50 100 150 200 IC [A] 250 300 350 400 /TechnicalInformation IGBT- IGBT-modules FF200R12KT3 IGBT,) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=15V,IC=200A,VCE=600V IGBT, transientthermalimpedanceIGBT,Inverter ZthJC=f(t) 100 1 Eon, Tvj = 125C Eoff, Tvj = 125C 90 ZthJC : IGBT 80 70 0,1 ZthJC [K/W] E [mJ] 60 50 40 0,01 30 20 i: 1 2 3 4 ri[K/W]: 0,0072 0,0396 0,0384 0,0348 i[s]: 0,01 0,02 0,05 0,1 10 0 0 4 8 12 16 20 RG [] 24 28 32 0,001 0,001 36 IGBT,RBSOA reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=15V,RGoff=3.6,Tvj=125C 0,01 0,1 t [s] 1 10 ,) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 450 400 IC, Modul IC, Chip 400 360 Tvj = 25C Tvj = 125C 320 350 280 300 IF [A] IC [A] 240 250 200 200 160 150 120 100 80 50 0 40 0 200 400 600 800 VCE [V] 1000 1200 0 1400 preparedby:MK dateofpublication:2013-10-03 approvedby:WR revision:3.0 5 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 VF [V] /TechnicalInformation IGBT- IGBT-modules FF200R12KT3 ,) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=3.6,VCE=600V ,) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=200A,VCE=600V 24 24 Erec, Tvj = 125C 20 20 16 16 E [mJ] E [mJ] Erec, Tvj = 125C 12 12 8 8 4 4 0 0 50 100 150 200 IF [A] 250 300 350 0 400 , transientthermalimpedanceDiode,Inverter ZthJC=f(t) 1 ZthJC : Diode ZthJC [K/W] 0,1 0,01 i: 1 2 3 4 ri[K/W]: 0,012 0,066 0,064 0,058 i[s]: 0,01 0,02 0,05 0,1 0,001 0,001 0,01 0,1 t [s] 1 10 preparedby:MK dateofpublication:2013-10-03 approvedby:WR revision:3.0 6 0 4 8 12 16 20 RG [] 24 28 32 36 /TechnicalInformation IGBT- IGBT-modules FF200R12KT3 /circuit_diagram_headline /packageoutlines j j n n i i preparedby:MK dateofpublication:2013-10-03 approvedby:WR revision:3.0 7 /TechnicalInformation IGBT- IGBT-modules FF200R12KT3 www.infineon.com - - - Terms&Conditionsofusage Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch application. 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