VS-20ETS..PbF, VS-20ETS..-M3, VS-20ATS..PbF, VS-20ATS..-M3 www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 20 A FEATURES * Very low forward voltage drop * 150 C max. operating junction temperature 2 * Glass passivated pellet chip junction 3 TO-220AC 1 TO-220AB Base cathode 1 2 3 * Designed and qualified JEDEC(R)-JESD 47 to * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Cathode to base 2 2 according APPLICATIONS * Input rectification 1 Cathode 1 Anode 3 Anode VS-20ETS.. * Vishay Semiconductors switches and output rectifiers which are available in identical package outlines 3 Anode DESCRIPTION VS-20ATS.. High voltage rectifiers optimized for very low forward voltage drop with moderate leakage. PRODUCT SUMMARY Package TO-220AC, TO-220AB IF(AV) 20 A VR 800 V to 1200 V VF at IF 1.1 V IFSM 300 A TJ max. 150 C Diode variation Single die, common anode These devices are intended for use in main rectification (single or three phase bridge). OUTPUT CURRENT IN TYPICAL APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS 16.3 21 A CHARACTERISTICS VALUES UNITS 20 A 800/1200 V 300 A 1.0 V -40 to +150 C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 C mA VS-20ETS08PbF, VS-20ETS08-M3 VS-20ATS08PbF, VS-20ATS08-M3 800 900 VS-20ETS12PbF, VS-20ETS12-M3 VS-20ATS12PbF, VS-20ATS12-M3 1200 1300 APPLICATIONS Capacitive input filter TA = 55 C, TJ = 125 C common heatsink of 1 C/W MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) Sinusoidal waveform VRRM IFSM VF 10 A, TJ = 25 C TJ VOLTAGE RATINGS PART NUMBER 1 Revision: 12-Oct-16 Document Number: 94341 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETS..PbF, VS-20ETS..-M3, VS-20ATS..PbF, VS-20ATS..-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average forward current IF(AV) TC = 105 C, 180 conduction half sine wave 20 Maximum peak one cycle non-repetitive surge current IFSM Maximum I2t for fusing I 2t Maximum I2t for fusing I2t UNITS 10 ms sine pulse, rated VRRM applied 250 10 ms sine pulse, no voltage reapplied 300 10 ms sine pulse, rated VRRM applied 316 10 ms sine pulse, no voltage reapplied 442 t = 0.1 ms to 10 ms, no voltage reapplied 4420 A2s VALUES UNITS 1.1 V 10.4 m 0.85 V A A2s ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL VFM Maximum forward voltage drop rt Forward slope resistance VF(TO) Threshold voltage Maximum reverse leakage current IRM TEST CONDITIONS 20 A, TJ = 25 C TJ = 150 C TJ = 25 C VR = Rated VRRM TJ = 150 C 0.1 mA 1.0 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS -40 to +150 C Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case RthJC DC operation 1.3 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth, and greased 0.5 C/W 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf * cm (lbf * in) Approximate weight Mounting torque Case style TO-220AC Marking device Case style TO-220AB 20ETS08 20ETS12 20ATS08 20ATS12 Revision: 12-Oct-16 Document Number: 94341 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETS..PbF, VS-20ETS..-M3, VS-20ATS..PbF, VS-20ATS..-M3 www.vishay.com Vishay Semiconductors 35 150 Maxiumum Average Forward Power Loss (W) Maximum Allowable Case Temperature (C) RthJC (DC) = 1.3 C/W 140 O 130 Conduction angle 120 110 100 60 30 90 120 180 DC 180 120 90 60 30 30 25 20 RMS limit 15 10 O Conduction period 5 TJ = 150 C 0 90 0 2 4 6 8 0 10 12 14 16 18 20 22 15 20 25 Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics 300 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 C at 60 Hz 0.0083 s at 50 Hz 0.0100 s RthJC (DC) = 1.3 C/W 140 130 Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (C) 10 Average Forward Current (A) 150 O Conduction period 120 30 110 60 90 100 120 180 250 200 150 100 DC 90 50 0 5 10 15 20 25 30 1 35 10 100 Average Forward Current (A) Number of Equal Amplitude Half Cycle Current Pulse (N) Fig. 2 - Current Rating Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 30 300 180 120 90 60 30 25 20 Peak Half Sine Wave Forward Current (A) Maxiumum Average Forward Power Loss (W) 5 RMS limit 15 10 O Conduction angle 5 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 C No voltage reapplied Rated VRRM reapplied 250 200 150 100 TJ = 150 C 50 0 0 4 8 12 16 20 24 0.01 0.1 1 Average Forward Current (A) Pulse Train Duration (s) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 12-Oct-16 Document Number: 94341 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETS..PbF, VS-20ETS..-M3, VS-20ATS..PbF, VS-20ATS..-M3 Instantaneous Forward Current (A) www.vishay.com Vishay Semiconductors 1000 TJ = 25 C TJ = 150 C 100 10 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics ZthJC - Transient Thermal Impedance (C/W) 10 Steady state value (DC operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 0.1 Single pulse 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Revision: 12-Oct-16 Document Number: 94341 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20ETS..PbF, VS-20ETS..-M3, VS-20ATS..PbF, VS-20ATS..-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 20 E T S 12 PbF 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (20 = 20 A) 3 - Circuit configuration: E = TO-220AC A = TO-220AB 4 - Package: T = TO-220 5 - Type of silicon: S = standard recovery rectifier 6 - 7 - 08 = 800 V 12 = 1200 V Voltage code x 100 = VRRM Environmental digit: PbF = lead (Pb)-free and RoHS-compliant -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-20ETS08PbF 50 1000 Antistatic plastic tubes VS-20ETS08-M3 50 1000 Antistatic plastic tubes VS-20ATS08PbF 50 1000 Antistatic plastic tubes VS-20ATS08-M3 50 1000 Antistatic plastic tubes VS-20ETS12PbF 50 1000 Antistatic plastic tubes VS-20ETS12-M3 50 1000 Antistatic plastic tubes VS-20ATS12PbF 50 1000 Antistatic plastic tubes VS-20ATS12-M3 50 1000 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions Part marking information SPICE model TO-220AC www.vishay.com/doc?95221 TO-220AB www.vishay.com/doc?95222 TO-220AC PbF www.vishay.com/doc?95224 TO-220AB PbF www.vishay.com/doc?95225 TO-220AC -M3 www.vishay.com/doc?95068 TO-220AB -M3 www.vishay.com/doc?95028 www.vishay.com/doc?96046 Revision: 12-Oct-16 Document Number: 94341 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AC DIMENSIONS in millimeters and inches (6) B Seating plane A E A OP 0.014 M B A M E2 (7) Q 3 D D L1 E A1 C Thermal pad C H1 D2 Detail B (6) 2 x b2 2xb Detail B D1 1 2 A (6) H1 (7) (6) D 1 2 3 Lead tip L3 C E1 (6) Lead assignments Diodes 1 + 2 - Cathode 3 - Anode L4 L c e1 A Conforms to JEDEC outline TO-220AC View A - A A2 0.015 M B A M SYMBOL MILLIMETERS INCHES NOTES SYMBOL MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 E1 A1 1.14 1.40 0.045 0.055 A2 2.56 2.92 0.101 0.115 b 0.69 1.01 0.027 0.040 b1 0.38 0.97 0.015 0.038 b2 1.20 1.73 0.047 0.068 b3 1.14 1.73 0.045 0.068 MILLIMETERS INCHES MAX. MIN. MAX. 6.86 8.89 0.270 0.350 6 E2 - 0.76 - 0.030 7 e 2.41 2.67 0.095 0.105 e1 4.88 5.28 0.192 0.208 4 H1 6.09 6.48 0.240 0.255 L 13.52 14.02 0.532 0.552 4 L1 3.32 3.82 0.131 0.150 c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084 c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 D 14.85 15.25 0.585 0.600 3 OP 3.54 3.73 0.139 0.147 Q 2.60 3.00 0.102 0.118 D1 8.38 9.02 0.330 0.355 D2 11.68 12.88 0.460 0.507 6 E 10.11 10.51 0.398 0.414 3, 6 NOTES MIN. 90 to 93 6, 7 2 2 90 to 93 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline Document Number: 95221 Revision: 07-Mar-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Outline Dimensions Vishay Semiconductors TO-220AB DIMENSIONS in millimeters and inches A (6) E E2 OP 0.014 M B A M (7) A B Seating plane A Thermal pad (E) A1 1 Q (6) D (H1) H1 (7) C D2 (6) (6) D 2 3 D L1 (2) C Detail B D1 3xb 1 2 3 3 x b2 Detail B C E1 (6) L Base metal View A - A c Plating c1 (4) c A 2x e A2 e1 (b, b2) b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead assignments Lead tip Diodes Conforms to JEDEC outline TO-220AB 1. - Anode/open 2. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.56 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.25 8.38 9.02 11.68 12.88 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.101 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.600 0.330 0.355 0.460 0.507 NOTES A A1 A2 b b1 4 b2 b3 4 c c1 4 D 3 D1 D2 6 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 Document Number: 95222 Revision: 08-Mar-11 SYMBOL E E1 E2 e e1 H1 L L1 OP Q (7) (8) MILLIMETERS MIN. MAX. 10.11 10.51 6.86 8.89 0.76 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.73 2.60 3.00 90 to 93 INCHES MIN. MAX. 0.398 0.414 0.270 0.350 0.030 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.147 0.102 0.118 90 to 93 NOTES 3, 6 6 7 6, 7 2 Dimensions E2 x H1 define a zone where stamping and singulation irregularities are allowed Outline conforms to JEDEC TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000