© 2008 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
VCES TC = 25°C to 150°C 600 V
VCGR TJ = 25°C to 150°C, RGE = 1MΩ600 V
VGES Continuous ± 20 V
VGEM Transient ± 30 V
IC110 TC = 110°C 48 A
ICM TC = 25°C, 1ms 280 A
SSOA VGE = 15V, TVJ = 125°C, RG = 5Ω ICM = 120 A
(RBSOA) Clamped inductive load @ ≤ 600V
PCTC = 25°C 300 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from case for 10s 300 °C
TSOLD Plastic body for 10 seconds 260 °C
MdMounting torque (TO-247)(TO-220) 1.13/10 Nm/lb.in.
Weight TO-263 2.5 g
TO-220 3.0 g
TO-247 6.0 g
DS99938A(05/08)
IXGA48N60B3
IXGP48N60B3
IXGH48N60B3
G = Gate C = Collector
E = Emitter TAB = Collector
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BVCES IC = 250μA, VGE = 0V 600 V
VGE(th) IC = 250μA, VCE = VGE 3.0 5.0 V
ICES VCE = VCES 25 μA
VGE = 0V TJ = 125°C 250 μA
IGES VCE = 0V, VGE = ± 20V ±100 nA
VCE(sat) IC = 32A, VGE = 15V, Note 1 1.8 V
VCES = 600V
IC110 = 48A
VCE(sat) ≤≤
≤≤
≤ 1.8V
GenX3TM 600V IGBT
Medium speed low Vsat PT
IGBTs 5-40 kHz switching
Features
zOptimized for low conduction and
switching losses
zSquare RBSOA
zInternational standard packages
Advantages
zHigh power density
zLow gate drive requirement
Applications
zPower Inverters
zUPS
zMotor Drives
zSMPS
zPFC Circuits
zBattery Chargers
zWelding Machines
zLamp Ballasts
TO-263 (IXGA)
G
E (TAB)
TO-247 (IXGH)
GCE
(TAB)
TO-220 (IXGP)
G
E
C
(TAB)
IXYS reserves the right to change limits, test conditions and dimensions.
IXGA48N60B3 IXGP48N60B3
IXGH48N60B3
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
gfs IC = 30A, VCE = 10V, Note 1 28 46 S
Cies 3980 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 170 pF
Cres 45 pF
Qg 115 nC
Qge IC = 40A, VGE = 15V, VCE = 0.5 • VCES 21 nC
Qgc 40 nC
td(on) 22 ns
tri 25 ns
Eon 0.84 mJ
td(off) 130 200 ns
tfi 116 200 ns
Eoff 0.66 1.20 mJ
td(on) 19 ns
tri 25 ns
Eon 1.71 mJ
td(off) 190 ns
tfi 157 ns
Eoff 1.30 mJ
RthJC 0.42 °C/W
RthCS (TO-247) 0.25 °C/W
(TO-220) 0.50 °C/W
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Pins: 1 - Gate 2 - Drain
3 - Source 4 - Drain
TO-220 (IXGP) Outline
TO-263 (IXGA) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
TO-247 (IXGH) Outline
Inductive Load, TJ = 25°C
IC = 30A, VGE = 15V
VCE = 480V, RG = 5Ω
Inductive Load, TJ = 125°C
IC = 30A, VGE = 15V
VCE = 480V, RG = 5Ω
© 2008 IXYS CORPORATION, All rights reserved
IXGA48N60B3 IXGP48N60B3
IXGH48N60B3
Fi g . 1. Ou tp u t C h ar acter i sti cs
@ 25ºC
0
10
20
30
40
50
60
70
80
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
VCE - Volts
IC - Amperes
VGE
= 15V
13V
11V
7V
5V
9V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
30
60
90
120
150
180
210
240
270
300
0246810121416
VCE - Volts
IC
-
Amperes
VGE
= 15V
13V
11V
7V
9V
Fi g . 3. Outp u t Ch ar acteri sti c s
@ 125ºC
0
10
20
30
40
50
60
70
80
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
VCE - Volts
IC - Amperes
VGE
= 15V
13V
11V
7V
5V
9V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
-50 -25 0 25 50 75 100 125 150
TJ - Degrees Centigrade
VCE(sat) - Normalized
VGE
= 15V
I C = 80A
I C = 40A
I C = 20A
Fi g . 5. C ol l ect o r-to - Emi tter Vo l tag e
vs. Gate-to -Emi tter Vo l tag e
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
5 6 7 8 9 10 11 12 13 14 15
VGE - Volts
VCE - Volts
I C
= 80A
40A
20A
TJ = 25ºC
Fi g . 6. I n pu t Admittan ce
0
20
40
60
80
100
120
140
160
180
200
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
VGE - Volts
IC
-
Amperes
TJ = 125ºC
25ºC
- 40ºC
IXYS reserves the right to change limits, test conditions and dimensions.
IXGA48N60B3 IXGP48N60B3
IXGH48N60B3
Fi g. 11. Maximu m Tr an si ent Ther mal Imp ed ance
0.01
0.10
1.00
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z(th)JC - ºC / W
Fig. 7. T ransconductance
0
10
20
30
40
50
60
70
80
0 20 40 60 80 100 120 140
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fi g . 10. R everse-B i as Safe Oper ati n g Area
0
20
40
60
80
100
120
140
100 150 200 250 300 350 400 450 500 550 600 650
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 5Ω
dV / dt < 10V / ns
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 300V
I
C
= 40A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Cies
Coes
Cres
IXYS REF: G_48N60B3D1(56) 05-05-08-A
© 2008 IXYS CORPORATION, All rights reserved
IXGA48N60B3 IXGP48N60B3
IXGH48N60B3
Fig. 12. Inductive Switching
Ener g y L o ss vs. Gate R esi stance
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0 5 10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
E
off
- MilliJoules
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
E
on
- MilliJoules
Eoff Eon
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 480V
I
C
= 30A
I
C
= 60A
I
C
= 15A
Fig. 17. Inductive Turn-off
Switc h i n g Times vs . Gate R esista n ce
120
130
140
150
160
170
180
190
200
210
220
0 5 10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
t
f
- Nanoseconds
150
200
250
300
350
400
450
500
550
600
650
t
d(off)
- Nanoseconds
t
f
t
d(off
)
- - - -
T
J
= 125ºC, V
GE
= 15V
VCE = 480V
I
C
= 60A
I
C
= 30A
I
C
= 15A
Fig. 13. Inductive Switching
Energy Loss vs. Collector Current
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
E
off
- MilliJoules
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 5Ω
,
V
GE
= 15V
V
CE
= 480V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching
Energy Loss vs. Juncti on Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
E
on
- MilliJoules
Eoff Eon
- - - -
R
G
= 5Ω
,
V
GE
= 15V
V
CE
= 480V
I
C
= 30A
I
C
= 60A
I
C
= 15A
Fig. 16. Inductive Turn-off
Switchi n g Ti mes vs. C o l l ector C ur r en t
100
110
120
130
140
150
160
170
180
190
200
210
15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
t
f
- Nanoseconds
120
130
140
150
160
170
180
190
200
210
220
230
t
d(off)
- Nanoseconds
t
f
t
d(off) - - - -
R
G
= 5Ω
, V
GE
= 15V
V
CE
= 480V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Inductive Turn-off
Switchi n g Ti mes vs. Ju n ctio n Temp er atur e
100
110
120
130
140
150
160
170
180
190
200
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
120
130
140
150
160
170
180
190
200
210
220
t
d(off)
- Nanoseconds
t
f
t
d(off) - - - -
R
G
= 5Ω
, V
GE
= 15V
V
CE
= 480V
I
C
= 60A, 15A
I C = 60A, 15A
I
C
= 30A
IXYS reserves the right to change limits, test conditions and dimensions.
IXGA48N60B3 IXGP48N60B3
IXGH48N60B3
IXYS REF: G_48N60B3D1(56) 05-05-08-A
Fig. 18. Inductive Turn-on
Switchi n g Times vs. Gate R esistan ce
0
10
20
30
40
50
60
70
80
90
100
110
0 5 10 15 20 25 30 35 40 45 50 55
R
G
- Ohms
t
r
- Nanoseconds
15
20
25
30
35
40
45
50
55
60
65
70
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 480V
I
C
= 15A
I
C
= 30A
I
C
= 60A
Fig. 19. Inductive Turn-on
Switchi n g Times vs. C o l l ector C u r r en t
10
15
20
25
30
35
40
45
50
55
60
15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
t
r
- Nanoseconds
18
19
20
21
22
23
24
25
26
27
28
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
R
G
= 5Ω , V
GE
= 15V
V
CE
= 480V
T
J
= 125ºC
T
J
= 25ºC
25ºC < T
J
< 125ºC
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
5
10
15
20
25
30
35
40
45
50
55
60
65
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
16
17
18
19
20
21
22
23
24
25
26
27
28
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
R
G
= 5Ω , V
GE
= 15V
V
CE
= 480V
I
C
= 15A
I
C
= 30A
I
C
= 60A
