International Rectifier HEXFET Power MOSFET Dynamic dv/dt Rating 175C Operating Temperature @ Fast Switching @ Ease of Paralleling Simple Drive Requirements Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throug PD-9.510C IRFZ44 Voss = 60V S Ib = 50*A Rpgion) = 0.0280 cost-effectiveness. hout the industry. Absolute Maximum Ratings TO-220AB Parameter Max. Units Ip @ To = 25C Continuous Drain Current, Vas @ 10 V 50* Ip @ Tc = 100C _ | Continuous Drain Current, Vas @ 10 V 36 A Ibm Pulsed Drain Current 200 Pp @ Tc = 25C | Power Dissipation 150 w Linear Derating Factor 1.0 WFC Vas Gate-to-Source Voltage +20 Vv Eas Single Pulse Avalanche Energy @ 100 mJ dv/dt Peak Diode Recovery dv/dt 45 Vins Ty Operating Junction and -55 to +175 Tste Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case} Mounting Torque, 6-32 or M3 screw 10 Ibfsin (1.1 Nem) Thermal Resistance Parameter Min. Typ. Max. Units Rosc Junction-to-Case _ _ 1.0 Recs Case-to-Sink, Flat, Greased Surface _ 0.50 Cw Raya Junction-to-Ambient _ _ 62 1271IRFZ44 Electrical Characteristics @ Ty = 25C (unless otherwise specified) Parameter Min. | Typ. | Max. | Units Test Conditions Viarjoss Drain-to-Source Breakdown Voltage 60 = = Vi | Ves=0V, In= 250A AV@rypss/ATy| Breakdown Voltage Temp. Coefficient {0.060} | V/C | Reference to 25C, Ib= 1mA Rpson) Static Drain-to-Source On-Resistance = |[0.028| Q | Vas=10V, lp=31A Veasith) Gate Threshold Voltage 2.0 _ 4.0 Vs | Vps=Ves, Ip= 250nA Os Forward Transconductance 15 _ S| Vos=25V, Ip=31A @ loss Drain-to-Source Leakage Current en WA Vos=60V, Ves-OV _ _ 250 Vps=48V, Ves=0V, Ty=150C loss Gate-to-Source Farward Leakage _ _ 100 nA Vas=20V Gate-to-Source Reverse Leakage _ | -100 Vas=-20V Qg Total Gate Charge _ _ 67 Ip=51A Qgs Gate-to-Source Charge _ _ 18 | nC |Vpg=48v Qga Gate-to-Drain ("Miller") Charge _ _ 25 Vas=10V See Fig. 6 and 13 @ ta(on) Turn-On Delay Time 14 Vpp=30V t Rise Time _ 110 _ ns Ip=51A tajort) Turn-Off Delay Time _ 45 _ Re=9.12 tr Fall Time _ 92 _ Rp=0.55Q See Figure 10 @ Lo Internal Drain inductance _ 4.5 Someozen) iC s nH_ | from package il Ls Internal Source inductance |-75 ) and center of _ die contact 8 Ciss Input Capacitance | 1900} Vas=0V Coss Output Capacitance | 920] PF | Vog=25V Ciss Reverse Transfer Capacitance _ 170 _ f=1.0MHz See Figure 5 Source-Drain Ratings and Characteristics Parameter Min. | Typ. | Max. | Units Test Conditions Is Continuous Source Current _ _ 50* MOSFET symbol D (Body Diode) A showing the Ism Pulsed Source Current _ | 200 integral reverse (Body Diode) p-n junction diode. s Vsp Diode Forward Voltage _ _ 2.5 Vs | Ty=25C, Is=51A, Ves=0V tr Reverse Recovery Time _ 120 | 180 ns | Ty=25C, Ir=51A Qi Reverse Recovery Charge | 0.53 | 0.80 | pC |di/dt=100A/is @ ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lp) Notes: @ Repetitive rating; pulse width limited by Isps<51A, di/dts250A/us, Vop<V(BR)pDss, max. junction temperature (See Figure 11) Tss175C Vopp=25V, starting Ty=25C, L=44uH @ Pulse width < 300 ps; duty cycle <2%. Re=25Q, las=51A (See Figure 12) * Current limited by the package, (Die Current =51A) 1272Ip, Drain Current (Amps) Ip, Drain Current (Amps) 20us PULSE WIDTH Te = 250c so-4 40! Vps, Drain-to-Source Voltage (voits) Fig 1. Typical Output Characteristics, Tc=25C Vpg = 25V 20us. PULSE WIDTH 4 5 6 40 Vas, Gate-to-Source Voltage (volts) Fig 3. Typical Transfer Characteristics Rpson); Drain-to-Source On Resistance Ip, Drain Current (Amps) (Normalized) IRFZ44 20us PULSE WIDTH Te = 175C 107 104 Vps, Drain-to-Source Voltage (volts) Fig 2. Typical Output Characteristics, To=175C 2.0 a a Ves = 10V 0.0 ~60 -40 -20 0 20 40 60 80 100 120 140 160 180 Ty, Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature 1273IREZ44 | 4000 Ge = OV, f = IMHz Cgg + Cga. Cy SHORTED Cgq + 3000 2000 Capacitance (pF) Ves, Gate-to-Source Voltage (volts) SEE FIGURE 13 100 to! 0 20 40 60 Ey Vps, Drain-to-Source Voltage (volts) Qe, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage _ QPERATION IN THIS AREA LIMITED a BY Ros (oN) = <x a LY Qo e E 2 < 5 = o 3 & = fas) 3 A 8 S o 5 > ~ o a ge A T 2 Ty=1759C SINGLE 4 2 5 40 @ 5 408 2 404 Vsp, Source-to-Drain Voltage (volts) Vps, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 1274Ip, Drain Current (Amps) 25 Fig 9. 50 IRFZ44 dL + - Vpb LIMITED BY PACKAGE YT1ov Pulse Width < ips Duty Factor s 0.1% BS Fig 10a. Switching Time Test Circuit Vps sox \ f___\ f | | | | I 10% | | | 75 100 4125 450 475 Vas /| I | i \ te okt a= eh Tc, Case Temperature (C) tajon) tr taot} ty Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms Case Temperature Thermal Response (Zajc) T Pom [st l SINGLE PULSE NOTES: al (THERMAL RESPONSE) 4. DUTY FACTOR, D=t1/t2 2. PEAK Ty=Pom x Zthjc + Te 10 105 10-4 103 toe o.4 1 10 ty, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Therma! Impedance, Junction-to-Case 1275IRFZ44 Vary tp to obtain Vps> required las 0.012 Vpgs / lag eee Fig 12b. Unclamped Inductive Waveforms tov 8 [ [Oss ya ep Ve Charge Fig 13a. Basic Gate Charge Waveform 250 Ip TOP 2ta 3BA BOTTOM S1A e iad De o a 3S 3 o a Eas, Single Pulse Energy (mJ) Do = 25V 0 25 50 75 100 126 4150 175 Starting Ty, Junction Temperature(C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current Current Regulator Vas Ie * Ip Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit - See page 1505 Appendix B: Package Outline Mechanical Drawing See page 1509 Appendix C: Part Marking Information - See page 1516 Appendix E: Optional Leadforms See page 1525 International Rectifier