MITSUBISHI HVIGBT MODULES CM1800HC-34H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1800HC-34H IC ................................................................ 1800A VCES ....................................................... 1700V Insulated Type 1-element in a Pack AISiC Baseplate Soft Reverse Recovery Diode APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 190 0.5 171 0.1 57 0.1 57 0.1 6 - M8 NUTS 57 0.1 C C C E E E 20 -0.2 +0.1 C C CM E C E E 124 0.1 140 0.5 C 40 0.2 C G E E CIRCUIT DIAGRAM G 20.25 0.2 8 - 7 0.1 MOUNTING HOLES 41.25 0.3 79.4 0.3 screwing depth min. 16.5 13 0.2 15 0.2 40 0.3 LABEL 29.5 0.5 5.2 0.2 5 0.15 screwing depth min. 7.7 61.5 0.3 28 +10 61.5 0.3 38 +10 3 - M4 NUTS HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 http://store.iiic.cc/ MITSUBISHI HVIGBT MODULES CM1800HC-34H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Top Tstg Viso tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Maximum short circuit pulse width Conditions VGE = 0V, Tj = 25C VCE = 0V, Tj = 25C TC = 85C Pulse (Note 1) Pulse TC = 25C, IGBT part (Note 1) RMS, sinusoidal, f = 60Hz, t = 1min. VCC = 1150V, VCES 1700V, VGE = 15V Tj = 125C Ratings Unit 1700 20 1800 3600 1800 3600 15600 -40 ~ +150 -40 ~ +125 -40 ~ +125 4000 V V A A A A W C C C V 10 s ELECTRICAL CHARACTERISTICS Symbol Cies Coes Cres Qg Collector cut-off current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge VEC (Note 2) Emitter-collector voltage td(on) tr Eon td(off) tf Eoff trr (Note 2) Qrr (Note 2) Erec (Note 2) Turn-on delay time Turn-on rise time Turn-on switching energy Turn-off delay time Turn-off fall time Turn-off switching energy Reverse recovery time Reverse recovery charge Reverse recovery energy ICES VGE(th) IGES VCE(sat) Note 1. 2. 3. 4. VCE = VCES, VGE = 0V, Tj = 25C Min -- Limits Typ -- Max 28 IC = 180mA, VCE = 10V, Tj = 25C 4.5 5.5 6.5 V -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 2.40 2.85 187 26.7 10.1 17.6 2.20 1.70 -- -- 590 -- -- 670 -- 560 260 0.5 3.10 -- -- -- -- -- 2.80 -- 1.60 1.30 -- 2.70 0.80 -- 2.70 -- -- A Item Conditions VGE = VGES, VCE = 0V, Tj = 25C IC = 1800A, VGE = 15V, Tj = 25C IC = 1800A, VGE = 15V, Tj = 125C (Note 4) (Note 4) VCE = 10V, f = 100kHz VGE = 0V, Tj = 25C VCC = 850V, IC = 1800A, VGE = 15V, Tj = 25C IE = 1800A, VGE = 0V, Tj = 25C (Note 4) IE = 1800A, VGE = 0V, Tj = 125C (Note 4) VCC = 850V, IC = 1800A, VGE = 15V RG(on) = 0.3, Tj = 125C, Ls = 80nH Inductive load VCC = 850V, IC = 1800A, VGE = 15V RG(off) = 0.3, Tj = 125C, Ls = 80nH Inductive load VCC = 850V, IC = 1800A, VGE = 15V RG(on) = 0.3, Tj = 125C, Ls = 80nH Inductive load Unit mA V nF nF nF C V s s mJ/pulse s s mJ/pulse s C mJ/pulse Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125C). The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Junction temperature (Tj) should not exceed Tjmax rating (150C). Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 http://store.iiic.cc/ MITSUBISHI HVIGBT MODULES CM1800HC-34H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE THERMAL CHARACTERISTICS Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Item Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, grease = 1W/m*K Min -- -- -- Limits Typ -- -- 7.0 Max 8.0 13.0 -- Unit K/kW K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Item M Mounting torque -- CTI da ds LC-E(int) Mass Comparative tracking index Clearance distance in air Creepage distance along surface Internal inductance Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw Min 7.0 3.0 1.0 -- 600 19.5 32.0 -- IGBT part Limits Typ -- -- -- 1.5 -- -- -- 10 Max 13.0 6.0 2.0 -- -- -- -- -- Unit N*m kg -- mm mm nH HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 http://store.iiic.cc/ MITSUBISHI HVIGBT MODULES CM1800HC-34H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 3600 3600 Tj = 25C 3000 3000 COLLECTOR CURRENT (A) VGE = 12V VGE = 20V COLLECTOR CURRENT (A) VCE = 10V VGE = 15V VGE = 10V 2400 1800 1200 2400 1800 1200 VGE = 8V 600 600 Tj = 25C Tj = 125C 0 1 2 3 4 5 0 6 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE (V) GATE-EMITTER VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 5 12 5 VGE = 15V EMITTER-COLLECTOR VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0 4 3 2 1 4 3 2 1 Tj = 25C Tj = 125C Tj = 25C Tj = 125C 0 0 600 1200 1800 2400 3000 3600 0 COLLECTOR CURRENT (A) 0 600 1200 1800 2400 3000 3600 EMITTER CURRENT (A) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 http://store.iiic.cc/ MITSUBISHI HVIGBT MODULES CM1800HC-34H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CAPACITANCE CHARACTERISTICS (TYPICAL) GATE CHARGE CHARACTERISTICS (TYPICAL) 103 20 VGE = 0V, Tj = 25C f = 100kHz 7 5 VCC = 850V, IC = 1800A Tj = 25C 3 CAPACITANCE (nF) GATE-EMITTER VOLTAGE (V) Cies 2 102 7 5 3 Coes 2 101 Cres 7 5 16 12 8 4 3 2 100 -1 10 2 3 5 7 101 5 10 15 20 25 GATE CHARGE (C) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 3000 VCC = 850V, VGE = 15V RG(on) = RG(off) = 0.3 Tj = 125C, Inductive load Eoff 800 400 Erec 600 1200 1800 VCC = 850V, IC = 1800A VGE = 15V Tj = 125C, Inductive load Eon 1200 0 0 COLLECTOR-EMITTER VOLTAGE (V) 1600 0 0 5 7 102 2 3 SWITCHING ENERGIES (mJ/pulse) SWITCHING ENERGIES (mJ/pulse) 2000 5 7 100 2 3 2400 3000 3600 2500 Eon 2000 1500 Eoff 1000 500 0 Erec 0 0.5 1 1.5 2 2.5 GATE RESISTANCE () COLLECTOR CURRENT (A) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 http://store.iiic.cc/ MITSUBISHI HVIGBT MODULES CM1800HC-34H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 101 7 5 FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 VCC = 850V, VGE = 15V RG(on) = RG(off) = 0.3 Tj = 125C, Inductive load REVERSE RECOVERY TIME (s) 3 td(off) 100 7 5 td(on) 3 tf 2 10-1 7 5 tr NORMALIZED TRANSIENT THERMAL IMPEDANCE 3 2 2 101 3 2 2 100 2 3 5 7 103 2 3 7 5 trr 3 2 10-1 1 10 5 7 104 2 3 5 7 102 2 3 5 7 103 101 2 3 5 7 104 COLLECTOR CURRENT (A) EMITTER CURRENT (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS REVERSE BIAS SAFE OPERATING AREA (RBSOA) 1.2 1.0 102 7 5 2 5 7 102 7 5 lrr 3 3 2 3 103 7 5 2 10-2 1 10 7 5 3 3 5000 VCC 1150V, VGE = +/-15V Tj = 125C, RG(off) 0.3 Single Pulse, TC = 25C Rth(j-c)Q = 8K/kW Rth(j-c)R = 13K/kW 4000 COLLECTOR CURRENT (A) SWITCHING TIMES (s) 2 104 VCC = 850V, VGE = 15V RG(on) = RG(off) = 0.3 Tj = 125C, Inductive load 7 5 REVERSE RECOVERY CURRENT (A) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 0.8 0.6 0.4 3000 2000 1000 0.2 0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 0 0 500 1000 1500 2000 COLLECTOR-EMITTER VOLTAGE (V) TIME (s) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 http://store.iiic.cc/