COMSET SEMICONDUCT ORS 1/6
The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power
transistors in monolithic Darlington configuration and are mounted in Jedec TO-
220 plastic pack age.
They are intented for use in power linear and switching applications.
The complementary PNP types are the BDX34A, BDX34B and BDX34C
respectively.
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
NPN BDX33 – BDX33A – BDX33B – BDX33C
PNP BDX34 – BDX34A – BDX34B – BDX34C
ABSOLUTE MAXIMUM RATINGS
Symbol Ratings Value Unit
BDX33
BDX34 45
BDX33A
BDX34A 60
BDX33B
BDX34B 80
VCEO Collector-Emitter Voltage
BDX33C
BDX34C 100
V
BDX33
BDX34 45
BDX33A
BDX34A 60
BDX33B
BDX34B 80
VCEV Collector-EmitterVoltage IB=0
BDX33C
BDX34C 100
V
COMSET SEMICONDUCT ORS 2/6
NPN BDX33 – BDX33A – BDX33B – BDX33C
PNP BDX34 – BDX34A – BDX34B – BDX34C
Symbol Ratings Value Unit
IC(RMS)
BDX33
BDX33A
BDX33B
BDX33C
BDX34
BDX34A
BDX34B
BDX34C
10
ICCollector Current
ICM
BDX33
BDX33A
BDX33B
BDX33C
BDX34
BDX34A
BDX34B
BDX34C
15
A
IBBase Current
BDX33
BDX33A
BDX33B
BDX33C
BDX34
BDX34A
BDX34B
BDX34C
0.25 A
PTPower Dissipation @ TC = 25°
BDX33
BDX33A
BDX33B
BDX33C
BDX34
BDX34A
BDX34B
BDX34C
70 Watts
W/°C
TJJunction Temperature
TSStorage Temperature
BDX33
BDX33A
BDX33B
BDX33C
BDX34
BDX34A
BDX34B
BDX34C
-65 to +150 °C
COMSET SEMICONDUCT ORS 3/6
NPN BDX33 – BDX33A – BDX33B – BDX33C
PNP BDX34 – BDX34A – BDX34B – BDX34C
THERMAL CHARACTERISTICS
Symbol Ratings Value Unit
RthJ-C Thermal Resistance, Junction to Case
BDX33
BDX33A
BDX33B
BDX33C
BDX34
BDX34A
BDX34B
BDX34C
1.78 °C/W
ELECT RICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol Ratings Test Condition(s) Min Typ Mx Unit
BDX33
BDX34 45 - -
BDX33A
BDX34A 60 - -
BDX33B
BDX34B 80 - -
VCEO(SUS) Collector-Emitter
Break do wn Voltag e (*) IC=100 mA
BDX33C
BDX34C 100 - -
V
BDX33
BDX34 45 - -
BDX33A
BDX34A 60 - -
BDX33B
BDX34B 80 - -
VCER(SUS) Collector-Emitter Sustaining
Voltage (*) IB=100 mA, RBE=100Ω
BDX33C
BDX34C 100 - -
V
COMSET SEMICONDUCT ORS 4/6
NPN BDX33 – BDX33A – BDX33B – BDX33C
PNP BDX34 – BDX34A – BDX34B – BDX34C
Symbol Ratings Test Condition(s) Min Typ Mx Unit
BDX33
BDX34 45 - -
BDX33A
BDX34A 60 - -
BDX33B
BDX34B 80 - -
VCEV(SUS) Collector-Emitter Sustaining
Voltage (*) IC=100 mA, VBE=-1.5 V
BDX33C
BDX34C 100 - -
V
VCB=22V BDX33
BDX34 --
VCB=30V BDX33A
BDX34A --
VCB=40V BDX33B
BDX34B --
TCASE=25°C
VCB=50V BDX33C
BDX34C --
0.5
VCB=22V BDX33
BDX34 --
VCB=30V BDX33A
BDX34A --
VCB=40V BDX33B
BDX34B --
ICEO
Collector Cutoff
Current
TCASE=100°C
VCB=50V BDX33C
BDX34C --
10
mA
IEBO Emitter Cutoff Current VBE=-5 V
BDX33
BDX33A
BDX33B
BDX33C
BDX34
BDX34A
BDX34B
BDX34C
--5.0mA
VCBO=-45 V BDX33
BDX34 --
VCBO=-60 V BDX33A
BDX34A --
VCBO=-80 V BDX33B
BDX34B --
ICBO
Collector-Base Cutoff
Current
TCASE=25°C
VCBO=100 V BDX33C
BDX34C --
0.2 mA
COMSET SEMICONDUCT ORS 5/6
NPN BDX33 – BDX33A – BDX33B – BDX33C
PNP BDX34 – BDX34A – BDX34B – BDX34C
Symbol Ratings Test Condition(s) Min Typ Mx Unit
VCBO=45 V BDX33
BDX34 --
VCBO=60 V BDX33A
BDX34A --
VCBO=80 V BDX33B
BDX34B --
ICBO Collector-Base Cutoff
Current
TCASE=100°C
VCBO=100 V BDX33C
BDX34C --
5mA
IC=4.0 A, IB=8.0 mA BDX33
BDX33A
BDX34
BDX34A
--2.5
VCE(SAT)
Collector-Emitter saturation
Voltage (*)
IC=3.0 A, IB=6.0 mA
BDX33B
BDX33C
BDX34B
BDX34C
--2.5
V
VFForward Voltage (pulse
method) IF=8 A
BDX33
BDX33A
BDX33B
BDX33C
BDX34
BDX34A
BDX34B
BDX34C
--4.0 V
IC=4.0 A, VCE=3.0V
BDX33
BDX33A
BDX34
BDX34A
--2.5
VBE Base-Emitter Voltage (*)
IC=3.0 A, VCE=-3V
BDX33B
BDX33C
BDX34B
BDX34C
--2.5
V
VCE=3.0 V, IC=4.0 A
BDX33
BDX33A
BDX34
BDX34A
750 --
hFE DC Current Gain (*)
VCE=3.0 V, IC=3.0 A
BDX33B
BDX33C
BDX34B
BDX34C
750 --
-
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
(1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit
COMSET SEMICONDUCT ORS 6/6
NPN BDX33 – BDX33A – BDX33B – BDX33C
PNP BDX34 – BDX34A – BDX34B – BDX34C
MECHANICAL DATA CASE TO-3
DIMENSIONS
mm inches
A 25,51 1,004
B 38,93 1,53
C 30,12 1,18
D 17,25 0,68
E 10,89 0,43
G 11,62 0,46
H 8,54 0,34
L 1,55 0,6
M 19,47 0,77
N 1 0,04
P 4,06 0,16
Pin 1 : Base
Pin 2 : Collector
Case : Emitter
