PMG370XN,115 - NXP Semiconductors / Philips Semiconductors

PMG370XN

N-channel µTrenchMOS™ extremely low level FET

Rev. 01 — 13 February 2004 Product data

MBD128

1. Product proﬁle

1.1 Description

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using

TrenchMOS™ technology.

1.2 Features

1.3 Applications

1.4 Quick reference data

2. Pinning information

■Surface mounted package ■Footprint 40% smaller than SOT23

■Low on-state resistance ■Low threshold voltage.

■Driver circuits ■Switching in portable appliances.

■VDS ≤30 V ■ID≤0.96 A

■Ptot ≤0.69 W ■RDSon ≤440 mΩ.

Table 1: Pinning - SOT363 (SC-88), simpliﬁed outline and symbol

Pin Description Simpliﬁed outline Symbol

1 drain (d)

SOT363 (SC-88)

2 drain (d)

3 gate (g)

4 source (s)

5 drain (d)

6 drain (d)

MSA370

123

654

Top view

MBB076

Philips Semiconductors PMG370XN

N-channel µTrenchMOS™ extremely low level FET

Product data Rev. 01 — 13 February 2004 2 of 12

3. Ordering information

4. Limiting values

Table 2: Ordering information

Type number Package

Name Description Version

PMG370XN SC-88 Plastic surface mounted package; 6 leads SOT363

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage (DC) 25 °C≤Tj≤150 °C - 30 V

VDGR drain-gate voltage (DC) 25 °C≤Tj≤150 °C; RGS =20kΩ-30V

VGS gate-source voltage (DC) - ±12 V

IDdrain current (DC) Tsp =25°C; VGS = 4.5 V; Figure 2 and 3- 0.96 A

Tsp = 100 °C; VGS = 4.5 V; Figure 2 - 0.61 A

IDM peak drain current Tsp =25°C; pulsed; tp≤10 µs; Figure 3 - 1.92 A

Ptot total power dissipation Tsp =25°C; Figure 1 - 0.69 W

Tstg storage temperature −55 +150 °C

Tjjunction temperature −55 +150 °C

Source-drain diode

ISsource (diode forward) current (DC) Tsp =25°C - 0.57 A

ISM peak source (diode forward) current Tsp =25°C; pulsed; tp≤10 µs - 1.15 A

Philips Semiconductors PMG370XN

N-channel µTrenchMOS™ extremely low level FET

Product data Rev. 01 — 13 February 2004 3 of 12

Fig 1. Normalized total power dissipation as a

function of solder point temperature. Fig 2. Normalized continuous drain current as a

function of solder point temperature.

Tsp =25°C; IDM is single pulse; VGS = 4.5 V

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

03aa17

120

0 50 100 150 200

(%)

Tsp (°C)

Pder

03aa25

120

0 50 100 150 200

Tsp (°C)

Ider

(%)

Pder Ptot

Ptot 25 C

()

----------------------- 100%×=Ider ID

ID25C

()

------------------- 100%×=

03ap84

10-2

10-1

10-1 1 10 102

VDS (V)

(A)

10 ms

Limit RDSon = VDS / ID

1 ms

tp = 10 µs

100 ms

100 µs

Philips Semiconductors PMG370XN

N-channel µTrenchMOS™ extremely low level FET

Product data Rev. 01 — 13 February 2004 4 of 12

5. Thermal characteristics

5.1 Transient thermal impedance

Table 4: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-sp) thermal resistance from junction to solder point Figure 4 - - 180 K/W

Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.

03ap83

102

103

10-4 10-3 10-2 10-1 1 10

tp (s)

Zth(j-sp)

(K/W)

single pulse

δ = 0.5

0.2

0.1

0.05

0.02

δ =

Philips Semiconductors PMG370XN

N-channel µTrenchMOS™ extremely low level FET

Product data Rev. 01 — 13 February 2004 5 of 12

6. Characteristics

Table 5: Characteristics

=25

C unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V(BR)DSS drain-source breakdown voltage ID=1µA; VGS =0V

Tj=25°C 30--V

Tj=−55 °C 27--V

VGS(th) gate-source threshold voltage ID= 0.25 mA; VDS =V

GS;Figure 9

Tj=25°C 0.5 1 1.5 V

Tj= 150 °C 0.35 - - V

Tj=−55 °C - - 1.8 V

IDSS drain-source leakage current VDS =30V; V

GS =0V

Tj=25°C --1µA

Tj= 150 °C - - 100 µA

IGSS gate-source leakage current VGS =±12 V; VDS = 0 V - 10 100 nA

RDSon drain-source on-state resistance VGS = 4.5 V; ID= 0.2 A; Figure 7 and 8

Tj=25°C - 370 440 mΩ

Tj= 150 °C - 629 748 mΩ

VGS = 2.5 V; ID= 0.1 A; Figure 7 and 8- 550 650 mΩ

Dynamic characteristics

Qg(tot) total gate charge ID= 1 A; VDD =15V; V

GS = 4.5 V;

Figure 13 - 0.65 - nC

Qgs gate-source charge - 0.14 - nC

Qgd gate-drain (Miller) charge - 0.18 - nC

Ciss input capacitance VGS =0V; V

DS = 25 V; f = 1 MHz;

Figure 11 -37-pF

Coss output capacitance - 8.5 - pF

Crss reverse transfer capacitance - 5.5 - pF

td(on) turn-on delay time VDD =15V; R

L=15Ω;

VGS = 4.5 V; RG=6Ω- 6.5 - ns

trrise time - 9.5 - ns

td(off) turn-off delay time - 14 - ns

tffall time - 5.5 - ns

Source-drain diode

VSD source-drain (diode forward) voltage IS= 0.3 A; VGS =0V;Figure 12 - 0.78 1.2 V

Philips Semiconductors PMG370XN

N-channel µTrenchMOS™ extremely low level FET

Product data Rev. 01 — 13 February 2004 6 of 12

Tj=25°CT

j=25°C and 150 °C; VDS >IDxR

DSon

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values. Fig 6. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

Tj=25°C

Fig 7. Drain-source on-state resistance as a function

of drain current; typical values. Fig 8. Normalized drain-source on-state resistance

factor as a function of junction temperature.

03ao00

0.5

1.5

2.5

0 0.5 1 1.5 2

VDS (V)

(A)

4.5 V

3 V

2.5 V

2 V

VGS = 1. 8 V

3.5 V

03ao02

0.5

1.5

2.5

012345

VGS (V)

(A) VDS > ID x RDSon

Tj = 150 °C

25 °C

03ao01

0.2

0.4

0.6

0.8

00.511.522.5

ID (A)

RDSon

(Ω)

4.5 V

3 V

3.5 V

VGS = 2. 5 V

03al00

0.6

1.2

1.8

-60 0 60 120 180

Tj (°C)

aRDSon

RDSon 25 C

()

-----------------------------

Philips Semiconductors PMG370XN

N-channel µTrenchMOS™ extremely low level FET

Product data Rev. 01 — 13 February 2004 7 of 12

ID= 0.25 mA; VDS =V

GS Tj=25°C; VDS =5V

Fig 9. Gate-source threshold voltage as a function of

junction temperature. Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

VGS = 0 V; f = 1 MHz

Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.

03al82

0.5

1.5

-60 0 60 120 180

Tj (°C)

VGS(th)

(V)

min

max

typ

03an65

10-6

10-5

10-4

10-3

0 0.4 0.8 1.2 1.6

VGS (V)

(A)

min maxtyp

03ao04

102

10-1 1 10 102

VDS (V)

(pF) Ciss

Coss

Crss

Philips Semiconductors PMG370XN

N-channel µTrenchMOS™ extremely low level FET

Product data Rev. 01 — 13 February 2004 8 of 12

Tj=25°C and 150 °C; VGS =0V I

D= 1 A; VDD =15V

Fig 12. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

values.

Fig 13. Gate-source voltage as a function of gate

charge; typical values.

03ao03

0.2

0.4

0.6

0.8

0 0.2 0.4 0.6 0.8 1

VSD (V)

(A)

Tj = 25 °C

150 °C

VGS = 0 V

03ao05

0 0.2 0.4 0.6 0.8

QG (nC)

VGS

(V) ID = 1 A

Tj = 25 °C

VDD = 15 V

Philips Semiconductors PMG370XN

N-channel µTrenchMOS™ extremely low level FET

Product data Rev. 01 — 13 February 2004 9 of 12

7. Package outline

Fig 14. SOT363 (SC-88).

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

SOT363 SC-88

wBM

pin 1

index A

detail X

vMA

0 1 2 mm

scale

132

Plastic surface mounted package; 6 leads SOT363

UNIT A1

max bpcDEe1HELpQywv

mm 0.1 0.30

0.20 2.2

1.8

0.25

0.10 1.35

1.15 0.65

1.3 2.2

2.0 0.2 0.10.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15 0.25

0.15

1.1

0.8

97-02-28

Philips Semiconductors PMG370XN

N-channel µTrenchMOS™ extremely low level FET

Product data Rev. 01 — 13 February 2004 10 of 12

8. Revision history

Table 6: Revision history

Rev Date CPCN Description

01 20040213 - Product data (9397 750 12822).

9397 750 12822

Philips Semiconductors PMG370XN

N-channel µTrenchMOS™ extremely low level FET

Product data Rev. 01 — 13 February 2004 11 of 12

9397 750 12822

Philips Semiconductors PMG370XN

N-channel µTrenchMOS™ extremely low level FET

Product data Rev. 01 — 13 February 2004 11 of 12

Contact information

For additional information, please visit http://www.semiconductors.philips.com.

For sales ofﬁce addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.Fax: +31 40 27 24825

9. Data sheet status

[1] Please consult the most recently issued data sheet before initiating or completing a design.

[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

10. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with

the Absolute Maximum Rating System (IEC 60134). Stress above one or

more of the limiting values may cause permanent damage to the device.

These are stress ratings only and operation of the device at these or at any

other conditions above those given in the Characteristics sections of the

speciﬁcation is not implied. Exposure to limiting values for extended periods

may affect device reliability.

Application information — Applications that are described herein for any

of these products are for illustrative purposes only. Philips Semiconductors

make no representation or warranty that such applications will be suitable for

the speciﬁed use without further testing or modiﬁcation.

11. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips Semiconductors

customers using or selling these products for use in such applications do so

at their own risk and agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to

make changes in the products - including circuits, standard cells, and/or

software - described or contained herein in order to improve design and/or

performance. When the product is in full production (status ‘Production’),

relevant changes will be communicated via a Customer Product/Process

Change Notiﬁcation (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these products, conveys no

licence or title under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that these products are

free from patent, copyright, or mask work right infringement, unless otherwise

speciﬁed.

12. Trademarks

TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.

Level Data sheet status[1] Product status[2][3] Deﬁnition

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published

at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in

order to improve the design and supply the best possible product.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

right to make changes at any time in order to improve the design, manufacturing and supply. Relevant

changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

Printed in The Netherlands

All rights are reserved. Reproduction in whole or in part is prohibited without the prior

written consent of the copyright owner.

The information presented in this document does not form part of any quotation or

contract, is believed to be accurate and reliable and may be changed without notice. No

liability will be accepted by the publisher for any consequence of its use. Publication

thereof does not convey nor imply any license under patent- or other industrial or

intellectual property rights.

Date of release: 13 February 2004 Document order number: 9397 750 12822

Contents

Philips Semiconductors PMG370XN

N-channel µTrenchMOS™ extremely low level FET

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

5.1 Transient thermal impedance . . . . . . . . . . . . . . 4

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

9 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 11

10 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

11 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11