MMBF170
N-CHANNEL ENHAN CEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Also Available in Lead Free Version
Mechanical Data
• Case: SOT-323
• Case Material - Molded Plastic. UL Flammability Rating
Classification 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Solderable per MIL-STD-202, Method 208
• Also Available in Lead Free Plating (Matte Tin Finish). Please
see Ordering Information, Note 4, on Page 2
• Terminal Connections: See Diagram
• Marking Information: See Page 2
• Ordering Information: See Page 2
• Weight: 0.006 grams (approximate)
ADVANCE INFORMATION
Source
Gate
Drain
SOT-323
D
GS
TOP VIEW
TOP VIEW
E
uivalent Circuit
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage RGS ≤ 1.0MΩ V
DGR 60 V
Gate-Source Voltage Continuous
Pulsed VGSS ±20
±40 V
Drain Current (Note 1) Continuous
Pulsed ID500
800 mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 1) Pd200
1.6 mW
mW/°C
Thermal Resistance, Junction to Ambient RθJA 625 K/W
Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage BVDSS 60 70 ⎯ V VGS = 0V, ID = 100μA
Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1.0 µA
VDS = 60V, VGS = 0V
Gate-Body Leakage IGSS ⎯ ⎯ ±10 nA VGS = ±15V, VDS = 0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage VGS(th) 0.8 2.1 3.0 V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance RDS (ON) ⎯ ⎯ 5.0 Ω V
GS = 10V, ID = 200mA
Forward Transconductance gFS 80 ⎯ ⎯ mS VDS =10V, ID = 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ⎯ 22 40 pF
Output Capacitance Coss ⎯ 11 30 pF
Reverse Transfer Capacitance Crss ⎯ 2.0 5.0 pF
VDS = 10V, VGS = 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) ⎯ ⎯ 10 ns
Turn-Off Delay Time tD(OFF) ⎯ ⎯ 10 ns
VDD = 25V, ID = 0.5A,
VGS = 10V, RGEN = 50Ω
Notes: 1. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Short duration pulse test used to minimize self-heating effect.
MMBF170W
Document number: DS30493 Rev. 2 - 0 1 of 3
www.diodes.com November 2007
© Diodes Incorporated