SEMiX603GAL066HDs
© by SEMIKRON Rev. 0 – 16.04.2010 1
SEMiX® 3s
GAL
Trench IGBT Modules
SEMiX603GAL066HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
•V
CE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• For short circuit: Soft RGoff
recommended
• Take care of over-voltage caused by
stray inductance
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
VCES 600 V
ICTj= 175 °C Tc=25°C 720 A
Tc=80°C 541 A
ICnom 600 A
ICRM ICRM = 2xICnom 1200 A
VGES -20 ... 20 V
tpsc
VCC = 360 V
VGE ≤ 15 V
VCES ≤ 600 V
Tj= 150 °C 6µs
Tj-40 ... 175 °C
Inverse diode
IFTj= 175 °C Tc=25°C 771 A
Tc=80°C 562 A
IFnom 600 A
IFRM IFRM = 2xIFnom 1200 A
IFSM tp= 10 ms, sin 180°, Tj=25°C 1800 A
Tj-40 ... 175 °C
Freewheeling diode
IFTj= 175 °C Tc=25°C 795 A
Tc=80°C 577 A
IFnom 600 A
IFRM IFRM = 2xIFnom 1200 A
IFSM tp= 10 ms, sin 180°, Tj=25°C 1800 A
Tj-40 ... 175 °C
Module
It(RMS) 600 A
Tstg -40 ... 125 °C
Visol AC sinus 50Hz, t = 1 min 4000 V
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
VCE(sat) IC=600A
VGE =15V
chiplevel
Tj=25°C 1.45 1.85 V
Tj= 150 °C 1.7 2.1 V
VCE0 Tj=25°C 0.9 1 V
Tj= 150 °C 0.85 0.9 V
rCE VGE =15V Tj=25°C 0.9 1.4 mΩ
Tj= 150 °C 1.4 2.0 mΩ
VGE(th) VGE=VCE, IC=9.6mA 5 5.8 6.5 V
ICES VGE =0V
VCE =600V
Tj=25°C 0.15 0.45 mA
Tj= 150 °C mA
Cies VCE =25V
VGE =0V
f=1MHz 37.0 nF
Coes f=1MHz 2.31 nF
Cres f=1MHz 1.10 nF
QGVGE =- 8 V...+ 15 V 4800 nC
RGint Tj=25°C 0.67 Ω
http://store.iiic.cc/
SEMiX603GAL066HDs
2 Rev. 0 – 16.04.2010 © by SEMIKRON
td(on) VCC = 300 V
IC=600A
RG on =3Ω
RG off =3Ω
Tj= 150 °C 150 ns
trTj= 150 °C 145 ns
Eon Tj= 150 °C 12 mJ
td(off) Tj= 150 °C 1050 ns
tfTj= 150 °C 105 ns
Eoff Tj= 150 °C 43 mJ
Rth(j-c) per IGBT 0.087 K/W
Inverse diode
VF = VEC IF=600A
VGE =0V
chip
Tj=25°C 1.4 1.60 V
Tj= 150 °C 1.4 1.6 V
VF0 Tj=25°C 0.9 1 1.1 V
Tj= 150 °C 0.75 0.85 0.95 V
rFTj=25°C 0.5 0.7 0.8 mΩ
Tj= 150 °C 0.8 0.9 1.1 mΩ
IRRM IF=600A
di/dtoff = 3800 A/µs
VGE =-8V
VCC = 300 V
Tj= 150 °C 350 A
Qrr Tj= 150 °C 63 µC
Err Tj= 150 °C 13 mJ
Rth(j-c) per diode 0.11 K/W
Freewheeling diode
VF = VEC IF=600A
VGE =0V
chip
Tj=25°C 1.3 1.5 V
Tj= 150 °C 1.3 1.5 V
VF0 Tj=25°C 0.9 1 1.1 V
Tj= 150 °C 0.75 0.85 0.95 V
rFTj=25°C 0.4 0.6 0.7 mΩ
Tj= 150 °C 0.7 0.8 0.9 mΩ
IRRM IF=600A
di/dtoff = 3800 A/µs
VGE =-8V
VCC = 300 V
Tj= 150 °C 350 A
Qrr Tj= 150 °C 63 µC
Err Tj= 150 °C 13 mJ
Rth(j-c) per diode 0.11 K/W
Module
LCE 20 nH
RCC'+EE' res., terminal-chip TC=25°C 0.7 mΩ
TC= 125 °C 1mΩ
Rth(c-s) per module 0.04 K/W
Msto heat sink (M5) 3 5 Nm
Mtto terminals (M6) 2.5 5 Nm
Nm
w300 g
Temperatur Sensor
R100 Tc=100°C (R25=5 kΩ) 493 ± 5% Ω
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
3550
±2% K
Characteristics
Symbol Conditions min. typ. max. Unit
SEMiX® 3s
GAL
Trench IGBT Modules
SEMiX603GAL066HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
•V
CE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• For short circuit: Soft RGoff
recommended
• Take care of over-voltage caused by
stray inductance
http://store.iiic.cc/
SEMiX603GAL066HDs
© by SEMIKRON Rev. 0 – 16.04.2010 3
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
http://store.iiic.cc/
SEMiX603GAL066HDs
4 Rev. 0 – 16.04.2010 © by SEMIKRON
Fig. 7: Typ. switching times vs. ICFig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge
http://store.iiic.cc/
SEMiX603GAL066HDs
© by SEMIKRON Rev. 0 – 16.04.2010 5
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
SEMiX 3s
spring configuration
http://store.iiic.cc/
