To our custo mers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corpor ation took over all the business of both
companies. Therefore, althoug h the old company name remains in t his document, it is a valid
Renesas Electronics document. W e appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electr onics Corporat ion (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
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(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
Rev.2.00 Aug 10, 2005 page 1 of 5
2SC1890A
Silicon NPN Epitaxial REJ03G0692-0200
(Previous ADE-208-1057)
Rev.2.00
Aug.10.2005
Application
• Low frequency high voltage amplifier
• Complementary pair with 2SA893A
Outline
1. Emitter
2. Collecto
r
3. Base
RENESAS Package code: PRSS0003DA-A
(Package name: TO-92 (1))
3
21
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO 120 V
Collector to emitter voltage VCEO 120 V
Emitter to base voltage VEBO 5 V
Collector current IC 50 mA
Collector power dissipation PC 300 mW
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
2SC1890A
Rev.2.00 Aug 10, 2005 page 2 of 5
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdo wn voltage V(BR)CEO 120 — — V IC = 1 mA, RBE = ∞
Collector cutoff current ICBO — — — µA VCB = 75 V, IE = 0
— — 0.5 µA VCB = 100 V, IE = 0
DC current transfer ratio hFE*1 250 — 1200 VCE = 12 V, IC = 2 mA
Base to emitter voltage VBE — — 0.75 V VCE = 12 V, IC = 2 mA
Collector to emitter saturation voltage VCE(sat) — — 0.5 V IC = 10 mA, IB = 1 mA
Gain bandwidth product fT — 200 — MHz VCE = 12 V, IC = 2 mA
Collector output capacitanc e Cob — 1.6 — pF VCB = 25 V, IE = 0,
f = 1 MHz
Noise figure NF — 2 10 dB VCE = 6 V, IC = 50 µA,
Rg = 50 kΩ, f = 1 kHz
Note: 1. The 2SC1890A is grouped by hFE as follows.
D E F
250 to 500 400 to 800 600 to 1200
2SC1890A
Rev.2.00 Aug 10, 2005 page 3 of 5
Main Characteristics
0
2
8
6
4
10
2010
Collector to Emitter Voltage VCE (V)
Collector Current IC (mA)
Typical Output Characteristics
30 40 50
10
8
6
2 µA
I
B
= 0
P
C
= 300 mW
4
0.03
0.01
3
1.0
0.30
0.10
10
0.40.30.2
Base to Emitter Voltage VBE (V)
Collector Current IC (mA)
Typical Transfer Characteristics
0.5 0.6 0.7 0.8
V
CE
= 12 V
Ta = 100°C
75
50
25
0
–25
0
400
200
1,000
800
600
1,200
0.10.030.01
Collector Current IC (mA)
DC Current Transfer Ratio hFE
DC Current Transfer Ratio vs.
Collector Current
0.3 1.0 3 10 30
V
CE
= 12 V
Ta = 100°C
75
50
25
0
–25
10
30
1,000
300
100
0.10.030.01
Collector Current IC (mA)
Gain Bandwidth Product fT (MHz)
Gain Bandwidth Product vs.
Collector Current
0.3 1.0 3 10 30
V
CE
= 12 V
2
1.0
0.5
10
5
50
20
512
Collector to Base Voltage VCB (V)
Collector Output Capacitance Cob (pF)
Collector Output Capacitance vs.
Collector to Base Voltage
10 20 50 100
I
E
= 0
f = 1 MHz
0
100
200
300
50
Ambient Temperature Ta (°C)
Collector Power Dissipation PC (mW)
Maximum Collector Dissipation Curve
100 150
2SC1890A
Rev.2.00 Aug 10, 2005 page 4 of 5
0.01
0.1
10
3
1.0
0.3
100
30
0.10.03
Collector Current IC (mA)
Signal Source Resistance Rg (kΩ)
Contours of Constant Noise Figure
0.3 1.0 3 10
V
CE
= 6 V
f = 10 Hz
NF = 1 dB
2
4
6
8
10
0.01
0.1
10
3
1.0
0.3
100
30
0.10.03
Collector Current IC (mA)
Signal Source Resistance Rg (kΩ)
Contours of Constant Noise Figure
0.3 1.0 3 10
V
CE
= 6 V
f = 120 Hz
NF = 1 dB
2
4
6
8
10
0.01
0.1
10
3
1.0
0.3
100
30
0.10.03
Collector Current IC (mA)
Signal Source Resistance Rg (kΩ)
Contours of Constant Noise Figure
0.3 1.0 3 10
V
CE
= 6 V
f = 1 kHz
NF = 1 dB
2
4
6
8
10
2SC1890A
Rev.2.00 Aug 10, 2005 page 5 of 5
Package Dimensions
0.60 Max
0.55 Max
4.8 ± 0.3 3.8 ± 0.3
5.0 ± 0.2
0.7
2.3 Max
12.7 Min
0.5 Max
1.27
2.54
Package Name
PRSS0003DA-A TO-92(1) / TO-92(1)V
MASS[Typ.]
0.25gSC-43A
RENESAS CodeJEITA Package Code
Unit: mm
Ordering Information
Part Name Quantity Shipping Container
2SC1890ADTZ
2SC1890AETZ
2SC1890AFTZ
2500 Hold Box, Radial Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
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© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
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