DSEI2x101-06A FRED VRRM = 600 V I FAV = 2x 96 A t rr = 35 ns Fast Recovery Epitaxial Diode Low Loss and Soft Recovery Parallel legs Part number DSEI2x101-06A Backside: isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) Planar passivated chips Low leakage current Short recovery time Improved thermal behaviour Low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Isolation Voltage: 3000 V~ Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Base plate: Copper internally DCB isolated Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130703b DSEI2x101-06A Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 600 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 600 V IR reverse current, drain current VF forward voltage drop min. typ. VR = 600 V TVJ = 25C 3 mA VR = 480 V TVJ = 125C 20 mA I F = 100 A TVJ = 25C 1.25 V 1.40 V 1.17 V I F = 200 A TVJ = 150 C I F = 100 A I F = 200 A I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TC = 70C rectangular 1.70 V T VJ = 150 C 96 A TVJ = 150 C 0.70 V d = 0.5 for power loss calculation only 4.7 m 0.5 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45C CJ junction capacitance VR = 400 V f = 1 MHz TVJ = 25C 107 pF I RM max. reverse recovery current TVJ = 25 C 27 A I F = 100 A; VR = 300 V TVJ = 100C 40 A t rr reverse recovery time -di F /dt = 600 A/s TVJ = 25 C 80 ns TVJ = 100C 150 ns IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved K/W 0.10 TC = 25C Data according to IEC 60747and per semiconductor unless otherwise specified 250 W 1.20 kA 20130703b DSEI2x101-06A Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 150 Unit A -40 150 C -40 150 C Weight 30 MD mounting torque MT terminal torque d Spp/App d Spb/Apb VISOL creepage distance on surface | striking distance through air t = 1 minute 1.1 1.5 1.1 1.5 Nm Nm terminal to terminal 10.5 3.2 mm terminal to backside 8.6 6.8 mm 3000 V 2500 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL 1 mA Product Marking abcde Logo YYWW Z Part No. XXXXXX Assembly Code DateCode Assembly Line Ordering Standard Part Number DSEI2x101-06A Equivalent Circuits for Simulation I V0 R0 Marking on Product DSEI2x101-06A * on die level Delivery Mode Tube Code No. 468029 T VJ = 150 C Fast Diode V 0 max threshold voltage 0.7 V R 0 max slope resistance * 3.5 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20130703b DSEI2x101-06A Outlines SOT-227B (minibloc) 2 1 3 4 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130703b DSEI2x101-06A Fast Diode 150 80 7 TVJ = 100C VR = 300 V 6 125 60 5 100 IF Qr 75 [A] [C] 3 100C 2 50 IRM 50 IF = 200 A 100 A 50 A 4 TVJ = 150C IF = 200 A 100 A 50 A 70 [A] 40 30 TVJ = 100C VR = 300 V 20 25C 25 1 0 0.0 0.5 1.0 10 0 0 100 1.5 0 1000 Fig. 1 Forward current IF versus VF 240 trr 200 VFR Kf [ns] 180 160 Qrr 140 [V] IF = 200 A 100 A 50 A 0.6 0.4 100 150 TVJ = 100C VR = 300 V 2.0 30 1.5 20 1.0 10 0.5 tfr [s] 200 400 600 800 1000 0 200 -diF /dt [A/s] TVJ [C] 400 600 800 0.0 1000 -diF /dt [A/s] Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 4 Typ. dyn. parameters Qr, IRM versus TVJ tfr 0 0 2.5 40 VFR 120 50 1000 3.0 50 220 IRM 800 60 TVJ = 100C VR = 300 V 1.2 0.8 600 Fig. 3 Typ. peak reverse current IRM versus -diF /dt 260 1.0 400 -diF /dt [A/s] Fig. 2 Typ. reverse recov. charge Qrr versus -diF /dt 1.4 0 200 -diF /dt [A/s] VF [V] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt 1 Constants for ZthJC calculation: D=0.7 ZthJC 0.5 i [K/W] 0.3 0.2 1 2 3 4 5 0.1 0.1 0.05 Single Pulse 0.05 0.001 0.01 0.1 1 Rthi ti [K/W] [s] 0.020 0.020 0.076 0.240 0.114 0.00002 0.00081 0.01 0.94 0.45 10 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130703b