1
Features
Single-volt age Operation
–5V Read
5V Reprogramming
Fast Read Access Time - 55 ns
Internal Program Control and Timer
Sector A rchi tecture
One 16K Byte Boot Block with Programming Lockout
Two 8K Byte Parameter Blocks
Two Main Memory Blocks (96K, 128K Bytes)
Fast Erase Cycle Time - 10 seconds
Byte-by-byte Programming - 10 µs/Byte Typical
Hardware Data Protection
DATA Polling for End of Program Detection
Low Power Dissipation
50 mA A ctive Current
100 µA CMOS Standby Current
Typical 10,000 Write Cycles
Description
The AT49F002(N)(T) is a 5-volt only in-system reprogrammable Flash memory. Its 2
megabits of memory is organized as 262,144 words by 8 bits. Man ufactured with
Atmels advanced nonvolatile CMOS technology, the device offers access times to 55
ns with power dissipation of just 275 mW over the commercial temperature range.
Rev. 1017D10/99
2-megabit
(256K x 8)
5-volt Only
Flash Memory
AT49F002
AT49F002N
AT49F002T
AT49F002NT
Pin Configurations
Pin Name Function
A0 - A17 Addresses
CE Chip Enable
OE Output Enable
WE Write Enab l e
RESET RESET
I/O0 - I/O7 Data Inputs/Outputs
DC Dont Connect
DIP Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
* RESET
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
WE
A17
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
PLCC Top View
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
4
3
2
1
32
31
30
14
15
16
17
18
19
20
I/O1
I/O2
GND
I/O3
I/O4
I/O5
I/O6
A12
A15
A16
RESET *
VCC
WE
A17
(continued)
VSOP Top View (8 x 14 mm) or
TSOP Top View (8 x 20 mm)
Type 1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
A14
A17
WE
VCC
* RESET
A16
A15
A12
A7
A6
A5
A4
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
*Note: This pin is a DC on the AT49F002(N)(T).
AT49F002(N)(T)
2
When th e device i s dese lecte d, the CMO S standby curren t
is less than 100 µA. For the AT 49F002N(T) pin 1 for the
DIP and PLCC packages and pin 9 for the TSOP package
are dont connect pins.
To allow for simple in-system reprogrammability, the
AT49F002(N)(T) does not require high input voltages for
programming. Five-volt-only commands determine the read
and programmi ng operation of the device. Readin g data
out of the device is similar to reading from an EPROM; it
has stan dard CE, OE, an d WE inputs to avoid bus co nten-
tion. Reprogramming the AT49F002(N)(T) is performed by
erasing a block of data and then programming on a byte by
byte basi s . The by te progr am min g ti me i s a fast 50 µ s. T h e
end of a program cycle can be optionally detected by the
DATA polling feature. Once the end of a byte program
cycle has been detected, a new access for a read or pro-
gram ca n begin. Th e typica l number of program and eras e
cycles is in excess of 10,000 cycles.
The device is erased by executing the erase command
sequence; the device internally controls the erase opera-
tions. Ther e are two 8K byte par ameter bl ock sect ions and
two main memory blocks.
The device has the capability to protect the data in the boot
block; this feature is enabled by a command sequence.
The 16K-byte boot block section includes a reprogramming
lock ou t fea t ure to pr ov ide data in tegr it y. Th e bo ot s ec tor is
design ed to contain us er secure co de, and when the fea-
ture is enabled, the boot sector is protected from being
reprogrammed.
In the AT49F002(N)(T), once the boot block programming
lockout feature is enabled, the contents of the boot block
are permanent and cannot be changed. In the
AT49F002( T), once the boot block programm ing lockout
feature is enabled, the contents of the boot block cannot be
changed with input voltage levels of 5.5 volts or less.
Block Diag ram
CONTROL
LOGIC
Y DECODER
PARAMETER
BLOCK 1
(8K BYTES)
BOOT BLOCK
(16K BYTES)
OE
WE
CE
RESET
ADDRESS
INPUTS
VCC
GND
AT49F002(N)
DATA INPUTS/OUTPUTS
I/O7 - I/O0
8
X DECODER
PARAMETER
BLOCK 2
(8K BYTES)
MAIN MEMORY
BLOCK 1
(96K BYTES)
MAIN MEMORY
BLOCK 2
(128K BYTES)
PROGRAM
DATA LATCHES
Y-GATING
INPUT/OUTPUT
BUFFERS
3FFFF
20000
1FFFF
08000
07FFF
06000
05FFF
04000
03FFF
00000
PARAMETER
BLOCK 1
(8K BYTES)
BOOT BLOCK
(16K BYTES)
AT49F002(N)T
DATA INPUTS/OUTPUTS
I/O7 - I/O0
8
PARAMETER
BLOCK 2
(8K BYTES)
MAIN MEMORY
BLOCK 1
(96K BYTES)
MAIN MEMORY
BLOCK 2
(128K BYTES)
PROGRAM
DATA LATCHES
Y-GATING
INPUT/OUTPUT
BUFFERS
3FFFF
3C000
3BFFF
3A000
39FFF
38000
37FFF
20000
1FFFF
00000
AT49F002(N)(T)
3
Device Operation
READ: The AT49F002(N)(T) is accessed like an EPROM.
When CE and OE are low and WE is high, the data stored
at the memory location determined by the address pins is
asserted on the outputs. The outputs are put in the high
impedance state whenever CE or OE is high. This dual-line
control gives designers flexibility in preventing bus conten-
tion.
COMMAND SEQUEN CES: When the de vice is first p ow-
ered on it will be reset to the read or standby mode
depending upon the state of the control line inputs. In order
to perform other device functions, a series of command
sequences are entered into the device. The command
sequences are shown in the Command Definitions table.
The command sequences are written by applying a low
pulse on th e WE or CE input with CE or WE low (respec-
tively) and OE high. The address is latched on the falling
edge of CE or WE, whichever occurs last. The data is
latched by the first rising edge of CE or WE. Standard
microprocess or write timings are used. The address loca-
tions used in the command sequences are not affected by
entering the command sequences.
RESET: A RESET input pin is provide d to ease some sy s-
tem appl icati ons. When RE SET is at a logic high level, the
device is in i ts sta nda rd operating mod e. A low l ev el on th e
RESET input halts the prese nt device op eration and puts
the outputs of the device in a high impedance state. If the
RESET pin makes a high to low transition during a program
or erase operation, the operation may not be successfully
comple ted and the op eratio n will have to be repeate d after
a high level is app lied to the RESET pin. W hen a high level
is reasse rted on the RESET pin, the device r eturns to the
read or standby mode, depending upon the state of the
control input s. By apply ing a 12V ± 0.5V in put signa l t o the
RESET pin, the boot block array can be reprogrammed
even if the boot block lockou t feature has been enabled
(see Boot Bl ock Pr ogrammi ng Loc kout Ov erride s ection ).
The RESET feature is not available for the AT49F002N(T).
ERASURE: Befor e a byte can b e reprogr amme d, the mai n
memory block or parameter block which contains the byte
must be erased . The erased state of th e memory bits is a
logical 1. The entire device can be erased at one time by
using a 6-byte software code. The software chip erase
code consists of 6-byte load commands to specific address
locations with a specific data pattern (please refer to the
Chip Erase Cycle Waveforms).
After th e so ftwar e c hi p e rase h as b een i niti ate d, the d evi c e
will internal ly time the erase opera tion so that no external
clocks are required. The maximum time needed to erase
the whole chip is tEC. If the boot bl ock lockout feature has
been enabled, the data in the boot sector will not be
erased.
CHIP E RAS E: If the boot block lockout has been enabled,
the Chip Erase function will erase Parameter Block 1,
Parame ter Bloc k 2, M ain Me mory B lock 1, a nd Mai n Mem-
ory Block 2 but not the boot block. If the Boot Block Lockout
has not been enabled, the Chip Erase function will erase
the entire chip. After the full chip erase the device will
return ba ck to re ad mo de. A ny c omm and dur ing chip er ase
will be ignored.
SECTOR ERASE: As an alternative to a full chip erase, the
device is organized into sectors that can be individually
erased. There are two 8K-byte parameter block s ections
and two main memory blocks. The 8K-byte parameter
block sections can be independently erased and repro-
grammed. The two main memory sections are designed to
be used as alternative memory sectors. That is, whenever
one of the blocks h as bee n eras ed and r eprog ra mme d, th e
other bl ock should be erased and rep rogrammed be fore
the fir st bloc k i s ag ain e ra sed. T he Se ct or E ra se c om man d
is a six bus cycle operation. The sector address is latched
on the falling WE edge of the sixth cycle while the 30H data
input command is latched at the rising edge of WE. The
sector erase starts after the rising edge of WE of the sixth
cycle. The erase operation is internally controlled ; it will
automatically time to completion.
BYTE PROGRAMMING: Once the memory array is
erased, the device is programmed (to a logical 0) on a
byte- by-byte basis . Please not e that a data 0 cannot be
progra mmed ba ck to a 1; only erase operations can con-
vert 0s to 1s. Programming is accomplished via the
internal device command register and is a 4 bus cycle
operation (please refer to the Command Definitions table).
The devi ce wil l au toma tic al ly gen er ate th e re quir ed in ter na l
program pulses.
The program cycle has add resses latched on the falling
edge of WE or CE, whichever occurs last, and the data
latched on the rising edge of WE or CE, whichever occurs
first. Programming is completed after the specified tBP cycle
time. The D ATA polling feature may also be used to indicate
the end of a program cycle.
BOOT BLOCK PROGRAMMING LOCKOUT: The device
has one designated block that has a programming lockout
feature. This feature prev ents programm ing of data in th e
designated block once the feature has been enabled. The
size of the block is 16K bytes. This block, referred to as the
boot block, can contain secure code that is used to bring up
the sys tem. En ablin g the l ockou t feature w ill al low the boot
code to stay in the device while data in the rest of the
device is updated. This feature does not have to be acti-
vated; the boo t blo ck s u sag e as a wr i te protected r eg io n is
optional to the user. The address range of the boot block is
00000 to 03FFF for the AT49F002(N) while the address
AT49F002(N)(T)
4
range of the boot block is 3C000 to 3FFFF for the
AT49F002(N)T.
Once the fe ature is en abled, the data in th e boot blo ck can
no longer be er ased or prog rammed wi th inpu t voltage lev-
els of 5.5V or less . Data in the ma in memo ry blo ck ca n still
be changed through the regular programming method. To
activ ate the lockout featu re, a series of si x program co m-
mands to specific addresses with specific data must be
performed. Please refer to the Command Definitions table.
BOOT BLOCK LOCKOUT DETECTION: A software
method is available to determine if programming of the boot
block section is locked out. When the device is in the soft-
ware product i dentificati on mode (see Sof tware Produ ct
Identification Entry and Exit sections) a read from address
loca tion 0000 2H will show i f progr ammin g the boot bl ock is
locked out for the AT49F002(N), and a read from address
location 3C002H will show if programming the boot block is
locked out for AT49F002(N)T. If the data on I/O0 is low, the
boot bloc k can be pro grammed; i f the data on I/O0 i s high,
the program lo ckout feature has be en activated and the
block c annot be progra mmed. The softw are produ ct identi-
fication exit code should be used to return to standard
operation.
BOOT BLOCK PROGRAMMING LOCKOUT OVERRIDE:
The use r can overri de the boot blo ck progra mming lo ckout
by taking the RESET pin to 12 volts. By doing this, pro-
tected boot block data can be altered through a chip erase,
sector erase or word programming. When the RESET pin is
brought back to TTL levels the boot block programming
lockou t featur e is agai n acti ve. Thi s feat ure is n ot ava ilabl e
on the AT49F002N(T).
PRODUCT IDENTIFICATION: The product identific ation
mode identifies the device and manufacturer as Atmel. It
may be accessed by hardware or software operation. The
hardware operation mode can be used by an external pro-
grammer to identify the correct programming algorithm for
the Atmel product.
For d etails, see Ope rating Mo des (f or hardw are ope ratio n)
or Software Product Identification. The manufacturer and
device code is the same for both modes.
DATA POLLING: The AT49F002(N)(T) features D ATA poll-
ing to indicate the end of a program c ycle. During a pro-
gram cycle an attempted read of the last byte loaded will
result in the complement of the loaded data on I/O7. Once
the program cycle has been completed, true data is valid
on all o utputs and the next cy cle may begi n. DATA polling
may begin at any time during the program cycle.
TOGGLE BIT: In addition to DATA polling the
AT49F002(N)(T) provides another method for determining
the end of a program or erase cycle. During a program or
erase ope ratio n, s ucces siv e atte mpt s to read data from the
device will result in I/O6 toggling between one and zer o.
Once the program cycle has completed, I/O6 will stop tog-
gling and valid data will be read. Ex amining the to ggle bit
may begin at any time during a program cycle.
HARDWARE DATA PROTECTION: Hardware features
protect against inadvertent programs to the
AT49F002(N)(T) in the following ways: (a) VCC se nse: if
VCC is below 3.8V (typical), the program function is inhib-
ited. (b) Program inhibit : holding any one of OE low, CE
high or WE high inhibits program cycles . (c) Noise filter:
pulses of less than 15 ns (typical) on the WE or CE inputs
will not initiate a program cycle.
AT49F002(N)(T)
5
Notes: 1. The DATA FORMAT in each bus cycle is as follows: I/O7 - I/O0 (Hex)
2. The 16K byte boot sector has the address range 00000H to 03FFFH for the AT49F002(N) and 3C000H to 3FFFFH for the
AT49F002(N)T
3. Either one of the Product ID Exit commands can be used.
4. SA = sector addresses:
For the AT49F002(N):
SA = 00000 to 03FFF for BOOT BLOCK
Nothing will happen and the device goes back to the read mode in 100 ns
SA = 04000 to 05FFF for PARAMETER BLOCK 1
SA = 06000 to 07FFF for PARAMETER BLOCK 2
SA = 08000 to 1FFFF for MAIN MEMORY ARRAY BLOCK 1
This command will erase - PB1, PB2 and MMB1
SA = 20000 to 3FFFF for MAIN MEMORY ARRAY BLOCK 2
For the AT49F002(N)T:
SA = 3C000 to 3FFFF for BOOT BLOCK
Nothing will happen and the device goes back to the read mode in 100 ns
SA = 3A000 to 3BFFF for PARAMETER BLOCK 1
SA = 38000 to 39FFF for PARAMETER BLOCK 2
SA = 20000 to 37FFF for MAIN MEMORY ARRAY BLOCK 1
This command will erase - PB1, PB2 and MMB1
SA = 00000 to IFFFF for MAIN MEMORY ARRAY BLOCK 2
Command Definition (in He x)(1)
Command
Sequence Bus
Cycles
1st Bus
Cycle 2nd Bus
Cycle 3rd Bus
Cycle 4th Bu s
Cycle 5th Bus
Cycle 6th Bu s
Cycle
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
Read 1 Addr DOUT
Chip Erase 6 5555 AA 2AAA 55 5555 80 5555 AA 2AAA 55 5555 10
Sector Erase 6 5555 AA 2AAA 55 5555 80 5555 AA 2AAA 55 SA(4) 30
Byte Progr am 4 5555 AA 2AAA 55 5555 A0 Add r DIN
Boot Block Lockout(2) 6 5555 AA 2AAA 55 5555 80 5555 AA 2AAA 55 5555 40
Product ID Entr y 3 5555 AA 2AAA 55 5555 90
Product ID Exit(3) 3 5555 AA 2AAA 55 5555 F0
Product ID Exit(3) 1 XXXX F0
Absolute Maxim u m Ratings*
Temperature Under Bias................................ -55°C to +125°C*NOTICE: Stre ss es be yond those lis ted under Absolute Maxi-
mum Ratings may cause permanent damage to the
device. This is a stress rating only and functional
operation of the device at these or any other condi-
tions beyond those indicated in the operational sec-
tions of this specification is not implied. Exposure to
absolute maximu m rating conditions for extended
periods may affe ct device rel iab ili ty.
Storage Temperature..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground.............................-0.6V to VCC + 0.6V
Voltage on OE
with Respect to Ground...................................-0.6V to +13.5V
AT49F002(N)(T)
6
Notes: 1. X can be VIL or VIH.
2. Refer to AC Programming Waveforms.
3. VH = 12.0V ± 0.5V.
4. Manufacturer Code: 1FH, Device Code: 07H - AT49F002(N), 08H - AT49F002(N)T
5. See details under Software Product Identification Entry/Exit.
6. This pin is not availa ble on the AT49F00 2N (T).
Note: 1. In the era s e mode, ICC is 90 mA.
DC and AC Operating Rang e
AT49F002(N)(T)-55 AT49F002(N)(T)-70 AT49F002(N)(T)-90 AT49F002(N)(T)-12
Operating
Temperature (Case) Com. 0°C - 70°C0°C - 70°C0°C - 70°C0°C - 70°C
Ind. -40°C - 85°C-40°C - 85°C-40°C - 85°C-40°C - 85°C
VCC Power Supply 5V ± 10% 5V ± 10% 5V ± 10% 5V ± 10%
Operating Modes
Mode CE OE WE RESET(6) Ai I/O
Read VIL VIL VIH VIH Ai DOUT
Program/Erase(2) VIL VIH VIL VIH Ai DIN
Standby/Write Inhibit VIH X(1) XV
IH X High Z
Program Inhibit XXV
IH VIH
XV
IL XV
IH
Output Disable X VIH XV
IH High Z
Reset XXX V
IL X High Z
Product Identification
Hardware VIL VIL VIH A1 - A17 = VIL, A9 = VH,(3) A0 = VIL Manufacturer Code(4)
A1 - A17 = VIL, A9 = VH,(3) A0 = VIH Device Code(4)
Software(5) A0 = VIL, A1 - A17=VIL Manufacturer Code(4)
A0 = VIH, A1 - A17=VIL Device Code(4)
DC Characteristics
Symbol Parameter Condition Min Max Units
ILI Input Load Current VIN = 0V to VCC 10 µA
ILO Output Leakage Current VI/O = 0V to VCC 10 µA
ISB1 VCC Standby Current CMOS CE = VCC - 0.3V to VCC Com. 100 µA
Ind. 300 µA
ISB2 VCC Standby Current TTL CE = 2.0V to VCC 3mA
ICC(1) VCC Active Current f = 5 MHz; IOUT = 0 mA 50 mA
VIL Input Low Voltage 0.8 V
VIH Input High Voltage 2.0 V
VOL Output Low Voltage IOL = 2.1 mA 0.45 V
VOH1 Output High Voltage IOH = -400 µA 2.4 V
VOH2 Output High Voltage CMOS IOH = -100 µA; VCC = 4.5V 4.2 V
AT49F002(N)(T)
7
AC Read Waveforms (1)(2)(3)(4)
Notes: 1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC.
2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change
without impact on tACC.
3. tDF is specifie d from OE or CE whicheve r occurs first (CL = 5 pF).
4. This parameter is characterized and is not 100% tested.
Input Test Waveform and
Measurement Level
tR, tF < 5 ns
Output Load Test
Note: 1. This parameter is characterized and is not 100% tested.
AC Read Characteristics
Symbol Parameter
AT49F002(N)(T)
Units
-55-70-90-12
Min Max Min Max Min Max Min Max
tACC Address to Output Delay 55 70 90 120 ns
tCE(1) CE to Output Delay 55 70 90 120 ns
tOE(2) OE to Output Delay 0 30 0 35 0 40 0 50 ns
tDF(3)(4) CE or OE to Output Float 0 25 0 25 0 25 0 30 ns
tOH
Output Hold from OE, CE
or Address, whichever
occurred first 0000ns
ADDRESS
OUTPUT
HIGH Z
OUTPUT
OE
CE
t
ACC
t
OE
t
DF
t
OH
t
CE
VALID
ADDRESS VALID
5.0V
1.8K
100 pF
30 pF 1.3K
5.0V
1.8K
OUTPUT
PIN
1.3K
OUTPUT
PIN
50 ns 70/90/120 n s
Pin Capacitance
f = 1 MHz, T = 25°C(1)
Symbol Typ Max Units Conditions
CIN 46pFV
IN = 0V
COUT 812pFV
OUT = 0V
AT49F002(N)(T)
8
AC Byte Load Waveforms
WE Controlled
CE Controlled
AC Byte Load Characteristics
Symbol Parameter Min Max Units
tAS, tOES Address, OE Set-up Time 0 ns
tAH Address H old Time 50 ns
tCS Chip Select Set-up Time 0 ns
tCH Chip Select Hold Time 0 ns
tWP Write Pulse Width (WE or CE)90ns
tDS Data Set-up Time 50 ns
tDH, tOEH Data, OE Hold Time 0 ns
tWPH Write Pulse Width High 90 ns
t
DH
t
DS
t
AS
t
AH
t
WP
CE
ADDRESS
DATA IN
OE t
OES
t
OEH
WE t
CS
t
CH
t
WPH
tDH
tDS
tAS tAH
tWP
WE
ADDRESS
DATA IN
OE tOES tOEH
CE tCS
tCH
tWPH
AT49F002(N)(T)
9
Program Cycle Waveforms
Sector or Chip Erase Cycle Waveforms
Notes: 1. OE must be high only when WE and CE are both low.
2. For chip erase, the address should be 5555. For sector erase, the address depends on what sector is to be erased.
(See note 4 under command definitions.)
3. For chip erase, the data should be 10H, and for sector erase, the data should be 30H.
Program Cycle Characteristics
Symbol Parameter Min Typ Max Units
tBP Byte Progr am mi ng Time 10 50 µs
tAS Address Set-u p Time 0 ns
tAH Address H old Time 50 ns
tDS Data Set-up Time 50 ns
tDH Data Hold Time 0 ns
tWP Write Pulse Widt h 90 ns
tWPH Write Pulse Width High 90 ns
tEC Erase Cyc le Tim e 10 seconds
AT49F002(N)(T)
10
Notes: 1. These parameters are characterized and not 100% tested.
2. See tOE spec i n AC Read C haracteristics.
Data Polling Wa veforms
Notes: 1. These parameters are characterized and not 100% tested.
2. See tOE spec i n AC Read C haracteristics.
Tog gle Bit Waveforms(1)(2)(3)
Notes: 1. Toggling either OE or CE or both OE and CE will operate toggle bit. The tOEHP specification must be met by the toggling
input(s).
2. Beginning and ending state of I/O6 will vary.
3. Any address location may be used but the address should not vary.
Data Polling Characteristics(1)
Symbol Parameter Min Typ Max Units
tDH Data Hold Time 10 ns
tOEH OE Hold Time 10 ns
tOE OE to Output Delay(2) ns
tWR Write Recovery Time 0 ns
Tog gle Bit Characteristics(1)
Symbol Parameter Min Typ Max Units
tDH Data Hold Time 10 ns
tOEH OE Hold Time 10 ns
tOE OE to Output Delay(2) ns
tOEHP OE High Pulse 150 ns
tWR Write Recovery Time 0 ns
HIGH Z
An An An An An
WE
CE
OE
I/O7
A0-A17
t
OEH
t
OE
t
DH
t
WR
WE
CE
OE
I/O6
tOEH
HIGH Z
tDH tOE
tWR
tOEHP
AT49F002(N)(T)
11
Software Product Identification Entry(1)
Software Product Identification Exit(1)
Notes for software product identification
1. Data Format: I/O7 - I/O0 (Hex);
Address Format: A14 - A0 (Hex).
2. A1 - A17 = VIL.
Manufacture Code is read for A0 = VIL;
Device Code is read for A0 = VIH.
3. The device does not remain in identification mode if
power ed down.
4. The device returns to standard operation mode.
5. Manufacturer Code: 1FH
Device Code: 07H - AT49F002(N)
08H - AT49F002(N)T
Boot Block Lockout Feature Enable
Algorithm(1)
Notes for boot block lockout feature enable:
1. Data Format: I/O7 - I/O0 (Hex);
Address Format: A14 - A0 (Hex).
2. Boot block lock out feature enabled.
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA 90
TO
ADDRESS 5555
ENTER PRODUCT
IDENTIFICATION
MODE(2)(3)(5)
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA F0
TO
ADDRESS 5555
EXIT PRODUCT
IDENTIFICATION
MODE(4)
OR
LOAD DATA F0
TO
ANY ADDRESS
EXIT PRODUCT
IDENTIFICATION
MODE(4)
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA 80
TO
ADDRESS 5555
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA 40
TO
ADDRESS 5555
PAUSE 1 second(2)
AT49F002(N)(T)
12
AT 49F002 Ordering Information
tACC
(ns)
ICC (mA)
Ordering Code Package Operation RangeActive Standby
55 50 0.1 AT49F002-55JC
AT49F002-55PC
AT49F002-55TC
AT49F002-55VC
32J
32P6
32T
32V
Commercial
(0° to 70°C)
50 0.3 AT49F002-55JI
AT49F002-55PI
AT49F002-55TI
AT49F002-55VI
32J
32P6
32T
32V
Industrial
(-40° to 85°C)
70 50 0.1 AT49F002-70JC
AT49F002-70PC
AT49F002-70TC
AT49F002-70VC
32J
32P6
32T
32V
Commercial
(0° to 70°C)
50 0.3 AT49F002-70JI
AT49F002-70PI
AT49F002-70TI
AT49F002-70VI
32J
32P6
32T
32V
Industrial
(-40° to 85°C)
90 50 0.1 AT49F002-90JC
AT49F002-90PC
AT49F002-90TC
AT49F002-90VC
32J
32P6
32T
32V
Commercial
(0° to 70°C)
50 0.3 AT49F002-90JI
AT49F002-90PI
AT49F002-90TI
AT49F002-90VI
32J
32P6
32T
32V
Industrial
(-40° to 85°C)
120 50 0.1 AT49F002-12JC
AT49F002-12PC
AT49F002-12TC
AT49F002-12VC
32J
32P6
32T
32V
Commercial
(0° to 70°C)
50 0.3 AT49F002-12JI
AT49F002-12PI
AT49F002-12TI
AT49F002-12VI
32J
32P6
32T
32V
Industrial
(-40° to 85°C)
Package Type
32J 32-lead, Plastic J-leaded Chip Carrier Package (PLCC)
32P6 32-pin, 0.600" Wide, Plastic Dual Inline Package (PDIP)
32T 32-lead, Plastic Thin Small Outline Package (TSOP) (8 x 20 mm)
32V 32-lead, Plastic Thin Small Outline Package (VSOP) (8 x 14 mm)
AT49F002(N)(T)
13
AT49F002N Ordering Information
tACC
(ns)
ICC (mA)
Ordering Code Package Operation RangeActive Standby
55 50 0.1 AT49F002N-55JC
AT49F002N-55PC
AT49F002N-55TC
AT49F002N-55VC
32J
32P6
32T
32V
Commercial
(0° to 70°C)
50 0.3 AT49F002N-55JI
AT49F002N-55PI
AT49F002N-55TI
AT49F002N-55VI
32J
32P6
32T
32V
Industrial
(-40° to 85°C)
70 50 0.1 AT49F002N-70JC
AT49F002N-70PC
AT49F002N-70TC
AT49F002N-70VC
32J
32P6
32T
32V
Commercial
(0° to 70°C)
50 0.3 AT49F002N-70JI
AT49F002N-70PI
AT49F002N-70TI
AT49F002N-70VI
32J
32P6
32T
32V
Industrial
(-40° to 85°C)
90 50 0.1 AT49F002N-90JC
AT49F002N-90PC
AT49F002N-90TC
AT49F002N-90VC
32J
32P6
32T
32V
Commercial
(0° to 70°C)
50 0.3 AT49F002N-90JI
AT49F002N-90PI
AT49F002N-90TI
AT49F002N-90VI
32J
32P6
32T
32V
Industrial
(-40° to 85°C)
120 50 0.1 AT49F002N-12JC
AT49F002N-12PC
AT49F002N-12TC
AT49F002N-12VC
32J
32P6
32T
32V
Commercial
(0° to 70°C)
50 0.3 AT49F002N-12JI
AT49F002N-12PI
AT49F002N-12TI
AT49F002N-12VI
32J
32P6
32T
32V
Industrial
(-40° to 85°C)
Package Type
32J 32-lead, Plastic J-leaded Chip Carrier Package (PLCC)
32P6 32-pin, 0.600" Wide, Plastic Dual Inline Package (PDIP)
32T 32-lead, Plastic Thin Small Outline Package (TSOP) (8 x 20 mm)
32V 32-lead, Plastic Thin Small Outline Package (VSOP) (8 x 14 mm)
AT49F002(N)(T)
14
AT 49F002T Ordering Info rmation
tACC
(ns)
ICC (mA)
Ordering Code Package Operation RangeActive Standby
55 50 0.1 AT49F002T-55JC
AT49F002T-55PC
AT49F002T-55TC
AT49F002T-55VC
32J
32P6
32T
32V
Commercial
(0° to 70°C)
50 0.3 AT49F002T-55JI
AT49F002T-55PI
AT49F002T-55TI
AT49F002T-55VI
32J
32P6
32T
32V
Industrial
(-40° to 85°C)
70 50 0.1 AT49F002T-70JC
AT49F002T-70PC
AT49F002T-70TC
AT49F002T-70VC
32J
32P6
32T
32V
Commercial
(0° to 70°C)
50 0.3 AT49F002T-70JI
AT49F002T-70PI
AT49F002T-70TI
AT49F002T-70VI
32J
32P6
32T
32V
Industrial
(-40° to 85°C)
90 50 0.1 AT49F002T-90JC
AT49F002T-90PC
AT49F002T-90TC
AT49F002T-90VC
32J
32P6
32T
32V
Commercial
(0° to 70°C)
50 0.3 AT49F002T-90JI
AT49F002T-90PI
AT49F002T-90TI
AT49F002T-90VI
32J
32P6
32T
32V
Industrial
(-40° to 85°C)
120 50 0.1 AT49F002T-12JC
AT49F002T-12PC
AT49F002T-12TC
AT49F002T-12VC
32J
32P6
32T
32V
Commercial
(0° to 70°C)
50 0.3 AT49F002T-12JI
AT49F002T-12PI
AT49F002T-12TI
AT49F002T-12VI
32J
32P6
32T
32V
Industrial
(-40° to 85°C)
Package Type
32J 32-lead, Plastic J-leaded Chip Carrier Package (PLCC)
32P6 32-pin, 0.600" Wide, Plastic Dual Inline Package (PDIP)
32T 32-lead, Plastic Thin Small Outline Package (TSOP) (8 x 20 mm)
32V 32-lead, Plastic Thin Small Outline Package (VSOP) (8 x 14 mm)
AT49F002(N)(T)
15
AT49F002NT Ordering Information
tACC
(ns)
ICC (mA)
Ordering Code Package Operation RangeActive Standby
55 50 0.1 AT49F002NT-55JC
AT49F002NT-55PC
AT49F002NT-55TC
AT49F002NT-55VC
32J
32P6
32T
32V
Commercial
(0° to 70°C)
50 0.3 AT49F002NT-55JI
AT49F002NT-55PI
AT49F002NT-55TI
AT49F002NT-55VI
32J
32P6
32T
32V
Industrial
(-40° to 85°C)
70 50 0.1 AT49F002NT-70JC
AT49F002NT-70PC
AT49F002NT-70TC
AT49F002NT-70VC
32J
32P6
32T
32V
Commercial
(0° to 70°C)
50 0.3 AT49F002NT-70JI
AT49F002NT-70PI
AT49F002NT-70TI
AT49F002NT-70VI
32J
32P6
32T
32V
Industrial
(-40° to 85°C)
90 50 0.1 AT49F002NT-90JC
AT49F002NT-90PC
AT49F002NT-90TC
AT49F002NT-90VC
32J
32P6
32T
32V
Commercial
(0° to 70°C)
50 0.3 AT49F002NT-90JI
AT49F002NT-90PI
AT49F002NT-90TI
AT49F002NT-90VI
32J
32P6
32T
32V
Industrial
(-40° to 85°C)
120 50 0.1 AT49F002NT-12JC
AT49F002NT-12PC
AT49F002NT-12TC
AT49F002NT-12VC
32J
32P6
32T
32V
Commercial
(0° to 70°C)
50 0.3 AT49F002NT-12JI
AT49F002NT-12PI
AT49F002NT-12TI
AT49F002NT-12VI
32J
32P6
32T
32V
Industrial
(-40° to 85°C)
Package Type
32J 32-lead, Plastic J-leaded Chip Carrier Package (PLCC)
32P6 32-pin, 0.600" Wide, Plastic Dual Inline Package (PDIP)
32T 32-lead, Plastic Thin Small Outline Package (TSOP) (8 x 20 mm)
32V 32-lead, Plastic Thin Small Outline Package (VSOP) (8 x 14 mm)
AT49F002(N)(T)
16
Packaging Information
.045(1.14) X 45˚ PIN NO. 1
IDENTIFY .025(.635) X 30˚ - 45˚
.012(.305)
.008(.203)
.021(.533)
.013(.330)
.530(13.5)
.490(12.4)
.030(.762)
.015(.381)
.095(2.41)
.060(1.52)
.140(3.56)
.120(3.05)
.032(.813)
.026(.660)
.050(1.27) TYP
.553(14.0)
.547(13.9)
.595(15.1)
.585(14.9)
.300(7.62) REF
.430(10.9)
.390(9.90)
AT CONTACT
POINTS
.022(.559) X 45˚ MAX (3X)
.453(11.5)
.447(11.4)
.495(12.6)
.485(12.3)
1.67(42.4)
1.64(41.7) PIN
1
.566(14.4)
.530(13.5)
.090(2.29)
MAX
.005(.127)
MIN
.065(1.65)
.015(.381)
.022(.559)
.014(.356)
.065(1.65)
.041(1.04)
.630(16.0)
.590(15.0) 0
15 REF
.690(17.5)
.610(15.5)
.012(.305)
.008(.203)
.110(2.79)
.090(2.29)
.161(4.09)
.125(3.18)
SEATING
PLANE
.220(5.59)
MAX
1.500(38.10) REF
*Controlling dimension: millimeters
INDEX
MARK
18.5(.728)
18.3(.720) 20.2(.795)
19.8(.780)
0.25(.010)
0.15(.006)
0.50(.020)
BSC 7.50(.295)
REF
8.20(.323)
7.80(.307) 1.20(.047) MAX
0.15(.006)
0.05(.002)
0
5REF
0.70(.028)
0.50(.020)
0.20(.008)
0.10(.004)
INDEX
MARK
12.5(.492)
12.3(.484) 14.2(.559)
13.8(.543)
0.25(.010)
0.15(.006)
0.50(.020)
BSC 7.50(.295)
REF
8.10(.319)
7.90(.311) 1.20(.047) MAX
0.15(.006)
0.05(.002)
0
5REF
0.70(.028)
0.50(.020)
0.20(.008)
0.10(.004)
32J, 32-lead, Plastic J-lea ded Chi p Carr i er (PLC C)
Dimensions in Inches and (Millimeters)
JEDEC STANDARD MS-016 AE
32P6, 32-pi n, 0.60 0" Wi de,
Plastic Dual Inline P ackage (PDIP)
Dimensions in Inches and (Millimeters)
32T, 32-lead, Plastic Thin Small Outline Package
(TSOP)
Dimensions in Millimeters and (Inches)*
32V, 32-lead, Plastic Thin Small Outline Package
(TSOP)
Dimensions in Millimeters and (Inches)
© Atmel Corporation 1999.
Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Companys standard war-
ranty which is detailed in Atmels Terms and Conditions located on the Companys web site. The Company assumes no responsibility for
any errors which may appear in this document, reser ves the right to change devices or specifications detailed herein at any time without
notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual prop-
erty of Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmels products are
not authorized for use as critical components in life suppor t devices or systems.
Mar ks b eari ng ® and/or are registered trademarks and trademarks of Atmel Corporation.
Ter ms and product names in this document may be trademarks of others.
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