1 GHz to 11 GHz, GaAs, HEMT, MMIC Low Noise Amplifier HMC753 Data Sheet NC NC NC NC GND 22 21 20 19 HMC753 18 GND 14 GND GND 6 13 GND GND 12 15 GND GND 5 NC 11 16 RFOUT GND 4 VDD 10 17 GND RFIN 3 VGG1 9 GND 2 13494-001 GND 24 GND 1 23 FUNCTIONAL BLOCK DIAGRAM Noise figure: 1.5 dB at 4 GHz (see Figure 10) Gain 16.5 dB at 1 GHz to 6 GHz 14 dB at 6 GHz to 11 GHz Output power for 1 dB compression (P1dB): 18 dBm at 1 GHz to 6 GHz Supply voltage (VDD): 5 V at 55 mA Output third-order intercept (IP3): 30 dBm at 1 GHz to 6 GHz 50 matched input/output (I/O) 24-lead lead frame chip scale package (LFCSP): 16 mm2 GND 7 VGG2 8 FEATURES Figure 1. APPLICATIONS Point to point radios Point to multipoint radios Military and space Test instrumentation GENERAL DESCRIPTION The HMC753 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), low noise, wideband amplifier housed in a leadless, 4 mm x 4 mm LFCSP. The amplifier operates between 1 GHz and 11 GHz, providing up to 16.5 dB of small signal gain at 1 GHz to 6 GHz, a 1.5 dB noise figure at 4 GHz (see Figure 10), and an output IP3 of 30 dBm at 1 GHz to 6 GHz, while requiring only 55 mA from a 5 V supply. Rev. D The P1dB output power of up to 18 dBm at 1 GHz to 6 GHz enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for balanced, I/Q, or image rejection mixers. The HMC753 also features I/Os that are dc blocked and internally matched to 50 , making the device ideal for high capacity microwave radios or very small aperture terminal (VSAT) applications. Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 (c)2015 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com HMC753* Product Page Quick Links Last Content Update: 11/01/2016 Comparable Parts Reference Materials View a parametric search of comparable parts Quality Documentation * Package/Assembly Qualification Test Report: LP4, LP4B, LP4C, LP4K (QTR: 2013-00487 REV: 04) Evaluation Kits * HMC753LP4E Evaluation Board Documentation Application Notes * AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers * Broadband Biasing of Amplifiers General Application Note * MMIC Amplifier Biasing Procedure Application Note * Thermal Management for Surface Mount Components General Application Note Data Sheet * HMC753: 1 GHz to 11 GHz, GaAs, HEMT, MMIC Low Noise Amplifier Data Sheet Tools and Simulations * HMC753 S-Parameter Design Resources * * * * HMC753 Material Declaration PCN-PDN Information Quality And Reliability Symbols and Footprints Discussions View all HMC753 EngineerZone Discussions Sample and Buy Visit the product page to see pricing options Technical Support Submit a technical question or find your regional support number * This page was dynamically generated by Analog Devices, Inc. and inserted into this data sheet. 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HMC753 Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1 Interface Schematics .....................................................................6 Applications ....................................................................................... 1 Typical Performance Characteristics ..............................................7 Functional Block Diagram .............................................................. 1 Theory of Operation .........................................................................9 General Description ......................................................................... 1 Applications Information .............................................................. 10 Revision History ............................................................................... 2 Biasing Procedures ..................................................................... 10 Specifications..................................................................................... 3 Evaluation PCB ........................................................................... 11 Electrical Specifications ............................................................... 3 Outline Dimensions ....................................................................... 13 Absolute Maximum Ratings............................................................ 4 Ordering Guide .......................................................................... 13 ESD Caution .................................................................................. 4 Pin Configuration and Function Descriptions ............................. 5 REVISION HISTORY 9/15--Rev. 03.0111 to Rev. D This Hittite Microwave Products data sheet has been reformatted to meet the styles and standards of Analog Devices, Inc. Changes to Features Section and General Description Section ...... 1 Changes to Table 1 ............................................................................ 3 Added Table 2; Renumbered Sequentially .................................... 3 Changes to Table 3 ............................................................................ 4 Changes to Table 4 ............................................................................ 5 Added Figure 3, Figure 4, Figure 5, Figure 6, and Figure 7; Renumbered Sequentially................................................................ 6 Added Theory of Operation Section and Figure 19 .................... 9 Added Applications Information Section, Figure 20, and Biasing Procedures Section ......................................................................... 10 Changes to Table 5 .......................................................................... 11 Changes to Ordering Guide .......................................................... 13 Rev. D | Page 2 of 13 Data Sheet HMC753 SPECIFICATIONS ELECTRICAL SPECIFICATIONS TA = 25C, VDD = 5 V, IDD = 55 mA. Table 1. Parameter FREQUENCY RANGE PERFORMANCE Gain Gain Variation over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (PSAT) Output Third Order Intercept (IP3) POWER SUPPLY Supply Current (IDD) Min 1 Typ 14 16.5 0.004 1.5 11 18 18 20 30 Max 6 2 55 Unit GHz Test Conditions/Comments dB dB/C dB dB dB dBm dBm dBm mA VDD = 5 V, set VGG2 = 1.5 V, VGG1 = -0.8 V typical Unit GHz Test Conditions/Comments Table 2. Parameter FREQUENCY RANGE PERFORMANCE Gain Gain Variation over Temperature Noise Figure Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (PSAT) Output Third Order Intercept (IP3) POWER SUPPLY Supply Current (IDD) Min 6 Typ 10 14 0.008 2 8 12 15 17 28 Max 11 2.7 55 Rev. D | Page 3 of 13 dB dB/C dB dB dB dBm dBm dBm mA VDD = 5 V, set VGG2 = 1.5 V, VGG1 = -0.8 V typical HMC753 Data Sheet ABSOLUTE MAXIMUM RATINGS Table 3. Parameter Drain Bias Voltage RF Input Power Gate Bias Voltage VGG1 VGG2 Channel Temperature Continuous PDISS (TA) = 85C), Derate 8.4 mW/C Above 85C Thermal Resistance (Channel to Die Bottom) Storage Temperature Range Operating Temperature Range ESD Sensitivity Human Body Model (HBM) Rating 6.0 V 12 dBm -1 V to +0.3 V 0 V to 2.5 V 180C 0.8 W Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. ESD CAUTION 119C/W -65C to +150C -40C to +85C Class 0, Passed 100 V Rev. D | Page 4 of 13 Data Sheet HMC753 19 GND 20 NC 21 NC 22 NC 23 NC 24 GND PIN CONFIGURATION AND FUNCTION DESCRIPTIONS GND 1 18 GND GND 2 17 GND HMC753 GND 4 TOP VIEW (Not to Scale) 16 RFOUT 15 GND 9 VGG1 GND 12 8 VDD 10 NC 11 7 13 GND GND 14 GND GND 6 VGG2 GND 5 NOTES 1. NC = NOT CONNECTED INTERNALLY. THESE PINS ARE NOT INTERNALLY CONNECTED; HOWEVER, ALL DATA SHOWN IS MEASURED WITH THESE PINS CONNECTED EXTERNALLY TO RF/DC GROUND. 2. EXPOSED PAD. THE EXPOSED PAD MUST BE CONNECTED TO RF/DC GROUND. 13494-002 RFIN 3 Figure 2. Pin Configuration Table 4. Pin Function Descriptions Pin No. 1, 2, 4 to 7, 12 to 15, 17 to 19, 24 3 8, 9 Mnemonic GND 10 11, 20 to 23 VDD NC 16 RFOUT EPAD RFIN VGG2, VGG1 Description Ground. The package bottom has an exposed metal pad that must be connected to RF/dc ground. RF Input. This pad is ac-coupled and matched to 50 . Gate Control for the Amplifier. Follow the biasing procedures described in the Biasing Procedure section. See Figure 22 for required external components. Power Supply Voltage for the Amplifier. See Figure 22 for required external components. Not Internally Connected. These pins are not internally connected; however, all data shown is measured with these pins connected externally to RF/dc ground. RF Output. This pad is ac-coupled and matched to 50 . Exposed Pad. The exposed pad must be connected to RF/dc ground. Rev. D | Page 5 of 13 HMC753 Data Sheet INTERFACE SCHEMATICS 13494-006 13494-003 VDD GND Figure 3. GND Interface Figure 6. VDD Interface 13494-004 RFIN 13494-007 RFOUT Figure 7. RFOUT Interface VGG1, VGG2 13494-005 Figure 4. RFIN Interface Figure 5. VGG1, VGG2 Interface Rev. D | Page 6 of 13 Data Sheet HMC753 25 18 15 16 S11 S21 S22 -5 -15 2 4 6 8 10 12 14 FREQUENCY (GHz) +85C +25C -40C 8 13494-008 0 1 3 5 7 9 11 FREQUENCY (GHz) Figure 8. Broadband Gain and Return Loss (Board Loss Subtracted out for Gain, Power, and Noise Figure Measurements) Figure 11. Gain vs. Frequency for Various Temperatures (Board Loss Subtracted out for Gain, Power, and Noise Figure Measurements) 0 0 +85C +25C -40C +85C +25C -40C -5 RETURN LOSS (dB) -5 -10 -15 -20 -10 -15 1 3 5 7 9 11 FREQUENCY (GHz) -25 13494-009 -25 Figure 9. Input Return Loss vs. Frequency for Various Temperatures 1 3 5 7 9 11 FREQUENCY (GHz) 13494-012 -20 Figure 12. Output Return Loss vs. Frequency for Various Temperatures 35 10 +85C +25C -40C 8 30 IP3 (dBm) 25 6 20 4 15 2 +85C +25C -40C 0 1 3 5 7 FREQUENCY (GHz) 9 11 13494-010 10 Figure 10. Noise Figure vs. Frequency for Various Temperatures (Board Loss Subtracted out for Gain, Power, and Noise Figure Measurements) Rev. D | Page 7 of 13 5 1 3 5 7 9 11 FREQUENCY (GHz) Figure 13. Output IP3 vs. Frequency for Various Temperatures 13494-013 RETURN LOSS (dB) 12 10 -25 NOISE FIGURE (dB) 14 13494-011 5 GAIN (dB) RESPONSE (dB) TYPICAL PERFORMANCE CHARACTERISTICS HMC753 Data Sheet 25 24 POUT (dBm), GAIN (dB), PAE (%) 20 15 10 +85C +25C -40C 7 9 11 FREQUENCY (GHz) Figure 14. P1dB vs. Frequency for Various Temperatures (Board Loss Subtracted out for Gain, Power, and Noise Figure Measurements) -4 -20 -10 -5 22 20 GAIN (dB), P1dB (dBm) -20 -30 -40 +85C +25C -40C -60 1 3 5 7 9 11 FREQUENCY (GHz) Figure 15. Reverse Isolation vs. Frequency for Various Temperatures 16 12 3 5 7 9 11 FREQUENCY (GHz) 13494-016 +85C +25C -40C 1 6 5 16 4 14 3 12 2 10 1 5.0 0 5.5 Figure 18. Gain, Noise Figure, and Power vs. Supply Voltage (VDD) at 6 GHz (Board Loss Subtracted out for Gain, P1dB, and Noise Figure Measurements) 20 4 7 P1dB GAIN NOISE FIGURE VDD (V) 24 8 5 18 8 4.5 13494-015 -50 0 Figure 17. Power Compression at 6 GHz (Board Loss Subtracted out for Gain, Power, and Noise Figure Measurements) -10 ISOLATION (dB) -15 INPUT POWER (dBm) 0 PSAT (dBm) 4 13494-017 5 13494-014 3 8 0 0 1 12 NOISE FIGURE (dB) 5 16 13494-018 P1dB (dBm) 20 POUT GAIN PAE Figure 16. PSAT vs. Frequency for Various Temperatures (Board Loss Subtracted out for Gain, Power, and Noise Figure Measurements) Rev. D | Page 8 of 13 Data Sheet HMC753 THEORY OF OPERATION The circuit architecture of the HMC753 wideband, low noise amplifier is shown in Figure 19. The HMC753 uses a single gain stage to form an amplifier with typical gain of 16.5 dB at 1 GHz to 6 GHz and 14 dB at the 6 GHz to 11 GHz frequency band. HMC753 Both RF input and RF output ports have on-chip dc block capacitors, which eliminates the need for external ac coupling capacitors. It is critical to supply very low inductance ground connections to the ground pins as well as to the backside exposed paddle. This ensures stable operation. RFOUT 13494-022 RFIN The input and output impedances are sufficiently stable over variations in temperature and supply voltage that no impedance matching compensation is required. Figure 19. Wideband Low Noise Amplifier Circuit Architecture The HMC753 has single-ended input and output ports whose impedances are nominally equal to 50 over the frequency range of 1 GHz to 11 GHz. Consequently, the HMC753 can be directly inserted into a 50 system with no impedance matching circuitry required. In addition, multiple HMC753 amplifiers can be cascaded back to back without the need of external matching circuitry. To achieve the best performance out of the HMC753 and not to damage the device, the recommended biasing sequence must be followed; see the Applications Information section for further details. Rev. D | Page 9 of 13 HMC753 Data Sheet APPLICATIONS INFORMATION The HMC753 is a GaAs, MMIC, high electron mobility transistor (HEMT), low noise, wideband amplifier. BIASING PROCEDURES The amplifier uses two field effect transistors (FETs) in series, source to drain. The basic schematic for a fundamental cell is shown in Figure 20. VDD RFOUT VGG2 The recommended biasing procedure during power-up is as follows: 1. 2. 3. 4. 5. 6. VGG1 13494-021 RFIN Connect GND. Set VGG1 to -1 V. Set VDD to 5 V. Set VGG2 to 1.5 V. Increase VGG1 to achieve a typical quiescent current (IDQ) = 55 mA. Apply the RF signal. The recommended biasing procedure during power-down is as follows: Figure 20. Fundamental Cell Schematic All measurements for this device are taken using the evaluation printed circuit board (PCB) in its default configuration. 1. 2. 3. 4. 5. Turn off the RF signal. Decrease VGG1 to -1 V to achieve IDQ = 0 mA. Decrease VGG2 to 0 V. Decrease VDD to 0 V. Increase VGG1 to 0 V. The VDD = 5 V and IDQ = 55 mA bias conditions are the operating points recommended to optimize the overall performance. Unless otherwise noted, the data shown is taken using the recommended bias conditions. Operation of the HMC753 at different bias conditions may result in performance that differs from the Typical Performance Characteristics shown in the data sheet. Biasing the HMC753 for higher drain current typically results in higher P1dB and output IP3 at the expense of increased power consumption. Rev. D | Page 10 of 13 Data Sheet HMC753 EVALUATION PCB J5 J6 H753 XXXX C3 C1 GND J3 VGG2 U1 C7 C8 J2 VGG1 J1 13494-020 C9 J4 C4 C5C2 C6 VDD VGG1 20 19 22 14 6 13 C9 4.7F C6 1000pF C3 100pF C8 4.7F C5 1000pF C2 100pF 11 5 RFOUT 12 15 9 16 4 10 17 3 C1 100pF C4 1000pF Figure 22. Typical Application Circuit Rev. D | Page 11 of 13 C7 4.7F VDD 13494-019 VGG2 21 24 18 2 8 1 7 RFIN 23 Figure 21. 122826-HMC753LP4E Evaluation PCB HMC753 Data Sheet Table 5. List of Materials for Evaluation PCB 122826-HMC753LP4E1 Item J5, J6 J1 to J4 C1 to C3 C4 to C6 C7 to C9 U1 PCB2 1 2 Description SMA connectors DC pins 100 pF capacitors, 0402 package 10,000 pF capacitors, 0603 package 4.7 F capacitors, tantalum HMC753 amplifier 122824-2 evaluation PCB It is recommended that the circuit board used in this application use RF circuit design techniques. It is also recommended that signal lines have a 50 impedance, and the package ground leads and exposed pad be connected directly to the ground plane, as shown in Figure 22. Use a sufficient number of via holes to connect the top and bottom ground planes. Mount the evaluation board to an appropriate heat sink. The evaluation circuit board shown is available from Analog Devices, Inc., upon request. Reference this number when ordering the complete evaluation PCB. Circuit board material: Rogers 4350 or Arlon 25FR. Rev. D | Page 12 of 13 Data Sheet HMC753 OUTLINE DIMENSIONS 4.10 4.00 SQ 3.90 PIN 1 INDICATOR 0.31 0.25 0.19 1 18 0.50 BSC 2.85 2.70 SQ 2.55 EXPOSED PAD 13 0.95 0.85 0.75 6 12 7 BOTTOM VIEW 0.05 MAX 0.02 NOM COPLANARITY 0.08 0.20 REF PKG-000000 SEATING PLANE 0.25 MIN FOR PROPER CONNECTION OF THE EXPOSED PAD, REFER TO THE PIN CONFIGURATION AND FUNCTION DESCRIPTIONS SECTION OF THIS DATA SHEET. 08-07-2015-A TOP VIEW 0.50 0.40 0.30 PIN 1 INDICATOR 24 19 Figure 23. 24-Lead Lead Frame Chip Scale Package [LFCSP_VQ] 4 mm x 4 mm Body, Very Thin Quad (HCP-24-3) Dimensions shown in millimeters ORDERING GUIDE Model HMC753LP4E Package Description 24-Lead Lead Frame Chip Scale Package [LFCSP_VQ] Package Option HCP-24-3 HMC753LP4ETR 24-Lead Lead Frame Chip Scale Package [LFCSP_VQ] HCP-24-3 122826-HMC753LP4E Evaluation Board 1 XXXX is the 4 digit lot number. (c)2015 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D13494-0-9/15(D) Rev. D | Page 13 of 13 Package Marking 1 753 XXXX 753 XXXX