GS9013
Vishay Semiconductors
for merly General Semiconductor
Document Number 88196 www.vishay.com
10-May-02 1
New Product
Small Signal Transistors (NPN)
Features
• NPN Silicon Epitaxial Planar Transistors for switching
and amplifier applications. Especially suitable for AF-
driver stages and low power output stages such as
por table radios in class-B push-pull operation.
• Complementar y to GS9012
Mechanical Data
Case: TO-92 Plastic Package
Weight: approx. 0.18g
Packaging Codes/Options:
E6/Bulk- 5K per container, 20K per box
E7/4K per Ammo mag., 20K per box
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified
Parameter Symbol Value Unit
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 20 V
Emitter-Base Voltage VEBO 5V
Collector Current IC500 mA
Power Dissipation at Tamb = 25°CP
tot 625(1) mW
Thermal Resistance Junction to Ambient Air RθJA 200(1) °C/W
Junction Temperature Tj150 °C
Storage Temperature Range TS–55 to +150 °C
Notes:
(1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case
0.181 (4.6)
min. 0.492 (12.5) 0.181 (4.6)
0.142 (3.6)
0.098 (2.5)
max. ∅
0.022 (0.55)
Bottom
View
Dimensions in inches and (millimeters)
TO-226AA ( TO-92)
GS9013
Vishay Semiconductors
for merly General Semiconductor
www.vishay.com Document Number 88196
210-May-02
Electrical Characteristics(TJ= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
Current Gain Group D VCE = 1V, IC= 50mA 64 —91
E78—112
DC Current Gain FhFE 96 —135 —
G 112 —166
H 144 —202
VCE = 1V, IC= 500mA 40 120 —
Collector-Emitter Breakdown Voltage V(BR)CEO IC= 1mA, IB= 0 20 ——V
Collector-Base Breakdown Voltage V(BR)CBO IC= 100µA, IE= 0 40 ——V
Emitter-Base Breakdown Voltage V(BR)EBO IE= 100µA, IC= 0 5 ——V
Collector Cut-off Current ICBO VCB = 25V, IE= 0 ——100 nA
Emitter Cut-off Current IEBO VEB = 3V, IC= 0 ——100 nA
Collector-Emitter Saturation Voltage VCE(sat) IC= 500mA, IB= 50mA —0.16 0.6 V
Base-Emitter Saturation Voltage VBE(sat) IC= 500mA, IB= 50mA —0.91 1.2 V
Base-Emitter ON Voltage VBE(on) VCE = 1V, IC = 10mA 0.6 0.67 0.7 V
