2N6674 Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)300 V(BR)CBO (V)450 I(C) Max. (A)15 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (oC)175o I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) h(FE) Min. Current gain.8.0 h(FE) Max. Current gain.20 @I(C) (A) (Test Condition)10 @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition Freq15M @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) t(d) Max. (s) Delay time.100n t(r) Max. (s) Rise time600n t(on) Max. (s) On time.