dD) D AMOS [= If IRF832,833 FIELD EFFECT POWER TRANSISTOR 500, 480 VOLTS RpS(ON) = 2.0 2 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology N-CHANNEL to achieve low on-resistance with excellent device rugged- ness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. CASE STYLE TO-220AB - Also, the extended safe operating area with good linear anni (MILLIMETERS) transfer characteristics makes it well suited for many linear ~ S ee ee 9961130 applications such as audio amplifiers and servo motors. Pe + ;,~o Oty a) A Features yt rents e Polysilicon gate Improved stability and reliability | 9366(9.02 Ween sition | mt e No secondary breakdown Excellent ruggedness vane | r fp 7p re +| | | 1303.3) >} fe 0810.15) J e Ultra-fast switching Independent of temperature 4 7 90Tt6.038) e Voltage controlled High transconductance ~~ . {600(12.7)MIN. ; TERM.2 | 9551.90) e Low input capacitance Reduced drive requirement TERM3~~| _ e Excellent thermal stability Ease of paralleling oes iit SETH =H Laas L____ 7 955(1.39} J c 21016.331 aE, UNIT | TYPE |TERM.1{TERM.2) TERM.3 TAB POWER MOS FET |T0-220-A8| GATE |DRAIN|SOURCE| ORAIN maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF832 IRF833 UNITS Drain-Source Voltage Voss 500 450 Volts Drain-Gate Voltage, Ras = 1MQ VoarR 500 450 Volts Continuous Drain Current g To = 25C lp 4.0 4.0 A To = 100C 2.5 2.5 A Pulsed Drain Current lpm 16 16 A Gate-Source Voltage Vas +20 +20 Volts Total Power Dissipation @ To = 25C Pp 75 75 Watts Derate Above 25C 0.6 0.6 w/c Operating and Storage Junction Temperature Range Ty, Tsta -55 to 150 -55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Resc 1.67 1.67 C/W Thermal Resistance, Junction to Ambient Raa 80 80 C/W Maximum Lead Temperature for Soldering -Purposes: % from Case for 5 Seconds Th 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 227electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC | SYMBOL{ MIN | TYP | MAX | UNIT off characteristics Drain-Source Breakdown Voltage IRF832 BVpss 500 _ _ Volts (Vas = OV, Ip = 250 uA) IRF833 450 _ _ Zero Gate Voltage Drain Current Ipss (Vps = Max Rating, Vas = OV, Tc = 25C) _ _ 250 uA (Vps = Max Rating, x 0.8, Vag = OV, To = 125C) _ _ 1000 Gate-Source Leakage Current on characteristics Gate Threshold Voltage To = 25C | VasctrH) 2.0 _ 4.0 Volts (Vps = Vas; Ip = 250 vA) On-State Drain Current | 40 _ _ A (Vag = 10V, Vpg = 10V) D(ON) Static Drain-Source On-State Resistance (Vag = 10V, Ip = 2.5A) Rps(On) _ 1.5 2.0 Ohms Forward Transconductance (Vps = 10V, Ip = 2.5A) Cts 1.75 2.2 _ mhos dynamic characteristics Input Capacitance Ves = OV Ciss _ 650 800 pF Output Capacitance Vos = 25V Coss - 90 200 pF Reverse Transfer Capacitance f= 1 MHz Crss _ 15 60 pF switching characteristics Turn-on Delay Time Vos = 225V ta(on) _ 15 _ ns Rise Time Ip = 2.5A, Vag = 15V tr - 10 _ ns Turn-off Delay Time Roen = 500, Res = 12.50 ta (off) _ 40 _ ns Fall Time (Res (eEquiv,) = 100) tt _ 25 _ ns source-drain diode ratings and characteristics* Continuous Source Current Is _ - 4.0 A Pulsed Source Current Ism _ _ 16 A Diode Forward Voltage _ (To = 28C, Ves = OV, Is = 4.0A) Vsp 1.0 1.3 Volts Reverse Recovery Time ter _ 460 ns (Is = 4.5A, dis/dt = 100A/usec, To = 125C) Qrr _ 4.5 _ uC *Pulse Test: Pulse width <= 300 us, duty cycle = 2% 100 60 40 20 a w x 4 <6 r 2 4 wi 3 5 2 oO Zz =z 10 08 OPERATION IN THIS AREA a 0.6 Y BE LIMITED BY Rosion) LE PULSE Te= 25C 1 2 4 6 810 20 40 60 80100 200 Vos DRAIN-SOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 400 600 1000 228 2.4 2.2 CONDITIONS: Rps(ony CONDITIONS: Ip = 2.6 A, Vag = 10V V@s(TH) CONDITIONS: Ip = 2502, Vg = Vag 2.0 1.8 1.6 1.4 1.2 1.0 08 0.6 Rosiony AND Vagiry) NORMALIZED 0.4 0.2 0 =40 0 40 80 T,, JUNCTION TEMPERATURE (C) TYPICAL NORMALIZED Rygion, AND Vegiru) VS. TEMP. 120 160