©2001 Fairch ild Semicond uctor C orpo ration HGTG20N60A4, HGTP20N60A4 Rev. B
HGTG20N60A4, HGTP20N60A4
600V, SMPS Series N-Channel IG B Ts
The HGTG20 N60A4 and HGTP20 N60A4 are M OS gated
high voltage switching devices combining the best features
of MOSF ETs and bipol ar transistors . These d evic es hav e the
high input impedance of a MOSFET and the low on-state
conducti on loss of a bi polar transistor. The much lower
on-state v o ltage drop varies on ly moder ately b etween 25oC
and 150oC.
This IG BT is idea l for many high voltage switc hin g
applic ations op erating at high frequenc ies w he r e lo w
conduction losses are essential. This device has been
optimized for high frequency switch mode power
supplies.
Formerly Developmental Type TA49339.
Symbol
Features
• >100kHz Operation at 390V, 20A
• 200kHz Operation at 390V, 12A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at TJ = 125oC
• Lo w Conduction Loss
•Temperature Compensati ng SABER™ Model
www.intersil.com
• Related Literature
- TB334 “Guideli nes for Soldering Surface Mount
Components to PC Boards
Packaging
JEDEC TO-220AB ALTERNATE VERSION
JEDEC STYLE TO-247
Ordering Information
PART NUMBER PACKAGE BRAND
HGTP20N60A4 TO-220AB 20N60A4
HGTG20N60A4 TO-247 20N60A4
NOT E: When ordering, use the entire part number.
C
E
G
GCE
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
C
E
G
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
Data Sheet December 2001
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©2001 Fairch ild Semicond uctor C orpo ration HGTG20N60A4, HGTP20N60A4 Rev. B
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG20N60A4, HGTP20 N60A4 UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 600 V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 70 A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 40 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 280 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V
Gate to Emitte r Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 100A at 600V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD290 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.32 W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case fo r 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG 300
260
oC
oC
CAUTION: S tresses above those l isted in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a stress on ly rating and operation o f the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junc tion temperature.
Electrical Specifications TJ = 25oC , Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltag e BVCES IC = 250µA, VGE = 0V 600 - - V
Emitter to Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V 15 - - V
Collector to Emitter Leakage Current ICES VCE = 600V TJ = 25oC - - 250 µA
TJ = 125oC--2.0mA
Collector to Emitter Saturation Voltage VCE(SAT) IC = 20A,
VGE = 15V TJ = 25oC-1.82.7V
TJ = 125oC-1.62.0V
Gate to Emitter Threshold V oltage VGE(TH) IC = 250µA, VCE = 600V 4.5 5.5 7.0 V
Gate to Emitter Leakage Current IGES VGE = ±20V - - ±250 nA
Switching SOA SSOA TJ = 150oC, RG = 3Ω, VGE = 15V
L = 100µH, VCE = 600V 100 - - A
Gate to Emitter Plateau Voltage VGEP IC = 20A, VCE = 300V - 8.6 - V
On-State Gate Charge Qg(ON) IC = 20A,
VCE = 300V VGE = 15V - 142 162 nC
VGE = 20V - 182 210 nC
Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25oC
ICE = 20A
VCE = 390V
VGE =15V
RG = 3Ω
L = 500µH
Test Circuit (Figure 20)
-15- ns
Current Rise Time trI -12- ns
Current Turn-Off Delay Time td(OFF)I -73- ns
Current Fall Time tfI -32- ns
Turn-On Energy (Note 3) EON1 - 105 - µJ
Turn-On Energy (Note 3) EON2 - 280 350 µJ
Turn-Off Energy (Note 2 ) EOFF - 150 200 µJ
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Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 125oC
ICE = 20A
VCE = 390V
VGE = 15V
RG = 3Ω
L = 500µH
Test Circuit (Figure 20)
-1521ns
Current Rise Time trI -1318ns
Current Turn-Off Delay Time td(OFF)I - 105 135 ns
Current Fall Time tfI -5573ns
Turn-On Energy (Note 3) EON1 - 115 - µJ
Turn-On Energy (Note 3) EON2 - 510 600 µJ
Turn-Off Energy (Note 2 ) EOFF - 330 500 µJ
Thermal Resistance Junction To Case RθJC - - 0.43 oC/W
NOTES:
2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power De vice Turn-Off Swi t ching L oss. This test m ethod produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 20.
Electrical Specifications TJ = 25oC , Unless Otherwise Specified (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. DC COLLECT OR CURRENT vs CASE
TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR T O
EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
TC, CASE TEMPERATURE (oC)
ICE, DC COLLECTOR CURRENT (A)
50
20
0
80
40
60
25 75 100 125 150
100 VGE = 15V
PACKAG E LIMIT
DIE CAPABIL ITY
VCE, COLLECTOR TO EMITTER VOLTAGE (V) 700
60
0
ICE, COLLECT OR TO EM ITTER CURRENT (A)
20
300 400200100 500 600
0
80
100
40
120 TJ = 150oC, RG = 3Ω, VGE = 15V, L = 100µH
fMAX, OPERATING FREQUENCY (kHz)
5
ICE, COLLECTOR TO EMITTER CURRENT (A)
40
300
5010 20
500
TJ = 125oC, RG = 3Ω, L = 500µH, VCE = 390V
100
4030
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
RØJC = 0.43oC/W, SEE NOTES
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
fMAX2 = (PD - PC) / (EON2 + EOFF)
TCVGE
15V
75oC
VGE, GATE TO EMITTER VOLTAGE ( V )
ISC, PEAK SHORT CIRCUIT CURRENT (A)
tSC, SHORT CIRCUIT WITHSTAND TIME (µs)
10 11 12 15
0
2
10
100
250
350
45014
13 14
4
6
8
12
150
200
300
400
VCE = 390V, RG = 3Ω, TJ = 125oC
tSC
ISC
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FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTA GE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECT OR T O
EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECT OR T O
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECT OR TO
EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
00.8 1.2
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
0
20
40
1.6 2.0 3.2
80
60
TJ = 125oC
TJ = 150oC
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VGE = 12V
100
TJ = 25oC
0.4 2.4 2.8
ICE, COLLECTOR TO EMITTER CURRENT (A)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs
TJ = 150oCTJ = 25oC
TJ = 125oC
0
20
40
80
60
100
00.81.21.62.00.4 2.4 2.8
EON2, TURN-ON ENERGY LOSS (µJ)
1000
600
ICE, COLLECTOR TO EMITTER CURRENT (A)
800
400
1200
01510 20 25 30 35 40
TJ = 125oC, VGE = 12V, VGE = 15V
RG = 3Ω, L = 500 µH, VCE = 390V
TJ = 25oC, VGE = 12V, VGE = 15V
200
5
1400
600
ICE, COLLECTOR TO EMITTER CURRENT (A)
EOFF, TURN-OFF ENERGY LOSS (µJ)
0
100
400
200
500
700
800
TJ = 25oC, VGE = 12V OR 15V
TJ = 125oC, VGE = 12V OR 15V
300
RG = 3Ω, L = 500µH, VCE = 390V
1510 20 25 30 35 405
ICE, COLLECTOR TO EMITTER CURRENT (A)
td(ON)I, TURN-ON DELAY TIME (ns)
8
14
16
18
20
22
1510 20 25 30 35 405
TJ = 25oC, TJ = 125oC, VGE = 15V
TJ = 25oC, TJ = 125oC, VGE = 12V
RG = 3Ω, L = 500µH, VCE = 390V
12
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
trI, RISE TIME (ns)
4
8
20
16
12
24
36
32
28
RG = 3Ω, L = 500µH, VCE = 390V
TJ = 25oC, TJ = 125oC, VGE = 12V
TJ = 25oC OR TJ = 125oC, VGE = 15V
1510 20 25 30 35 405
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©2001 Fairch ild Semicond uctor C orpo ration HGTG20N60A4, HGTP20N60A4 Rev. B
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR T O
EMITTER CURRENT FIGURE 12. FALL TIME vs COLLECT OR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. TO TAL SWIT CHING LOSS vs CASE
TEMPERATURE FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
Typical Performance Curves Unless Otherwise Specified (Continued)
80
60
70
ICE, COLLECTOR TO EMITTER CURRENT (A)
td(OFF)I, TURN-OFF DELAY TIME (ns)
120
100
110
90
VGE = 12V, VGE = 15V, TJ = 25oC
VGE = 12V, VGE = 15V, TJ = 125oC
RG = 3Ω, L = 500µH, VCE = 390V
1510 20 25 30 35 405
ICE, COLLECTOR TO EMITTER CURRENT (A)
tfI, FALL TIME (ns)
16
32
24
48
64
40
56
RG = 3Ω, L = 500µH, VCE = 390V
72
80
1510 20 25 30 35 405
TJ = 125oC, VGE = 12V OR 15V
TJ = 25oC, VGE = 12V OR 15V
ICE, COLLECTO R TO EMITTER CURRENT (A)
0
80
120
78910 12
VGE, GATE TO EMITTER VOLTAGE (V)
11
160
200
240
6
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VCE = 10V
TJ = 125oC
TJ = -55oC
TJ = 25oC
40
VGE, GATE TO EMITTER VOLTAGE (V)
QG, GATE CHARGE (nC)
2
14
0
4
10
IG(REF) = 1mA, RL = 15Ω, TJ = 25oC
VCE = 200V
VCE = 400V
6
8
12
16
VCE = 600V
20 40 60 80 120100 140 1600
ICE = 10A
0
0.2
0.4
50 75 100
TC, CASE TEMPERATURE (oC)
0.6
1.0
12525 150
1.8
0.8
ETOTAL, TOTAL SWITCHING ENERGY LO SS (mJ)
ETOTAL = EON2 + EOFF
RG = 3Ω, L = 500µH, VCE = 390V, VGE = 15V
1.4
1.2
1.6
ICE = 30A
ICE = 20A
0.1 10 100
RG, GATE RESISTANCE (Ω)
1
31000
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
10
TJ = 125oC, L = 500µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
ICE = 10A
ICE = 20A
ICE = 30A
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FIGURE 17. CAPA CITANCE vs COLLECT OR T O EMITTER
VOLTAGE FIGURE 18. COLLECTO R TO EM ITTER ON-STA TE V OLTA GE
vs GATE TO EMITTER VOLTAGE
FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 21. SWITCHING TEST WAVEFORMS
Typical Performance Curves Unless Otherwise Specified (Continued)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
C, CAPACITANCE (nF)
0 20406080100
0
1
3
4
5
2
FREQUENCY = 1MHz
CIES
COES
CRES
VGE, G ATE TO EMIT TER VOLTAGE (V)
89
1.7 10 12
1.8
2.0
1.9
11 13 14 15 16
2.1
2.2
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ICE = 30A
ICE = 20A
ICE = 10A
DUTY CYCLE < 0.5%, TJ = 25oC
PULSE DURATION = 250µs,
t1, RECTANGULAR PULSE DURATION (s)
ZθJC, NORMALIZED TH ERMAL RESPONSE
10-2
10-1
100
10-5 10-3 10-2 10-1 100
10-4
t1
t2
PD
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
SINGLE PULSE
0.1
0.2
0.5
0.05
0.01
0.02
RG = 3Ω
L = 500µH
VDD = 390V
+
-
HGTG20N60A4D
DUT
DIODE TA49372
tfI
td(OFF)I trI
td(ON)I
10%
90%
10%
90%
VCE
ICE
VGE
EOFF
EON2
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Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate- ins ul atio n dam age by the electrostatic d isc harge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static c harge
built in the handle r’s body cap ac itance is not discha rged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production b y nume rous equipment m anuf acturers in
military, ind us trial and con su mer applications, w ith vi rtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the follo wing basic preca utions are
taken:
1. Prior to ass emb ly int o a circ uit, al l lead s sho uld be k ept
shorted together either by the use of metal shorting
springs or by the insertion into co ndu ctive ma terial suc h
as “ECCOSORBD™ LD26” or equivalent.
2. When devi ces are remo v ed by hand from their carriers ,
the hand being u sed shoul d be grou nded b y any suitab le
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices sho uld n e v er b e ins erted into or r emo v ed from
circuits with power on.
5. Gate Voltage Rating - Ne v er e xceed the g ate-vol tage
rat ing of VGEM. Exceedi ng the ra ted VGE can result in
permanent damage to the oxide la yer in the ga te regio n.
6. Gate Terminatio n - The gates of these de vi ces are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
v oltage buil dup on the input ca pacitor due to leakage
currents or pickup.
7. Gate Protection - The se de vices do no t hav e an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
Operating Frequency Information
Op erating frequen cy information for a typical device
(Figure 3) is presen ted as a guide for estimati ng device
perfor mance for a specific application. Other typical
frequency vs collector current (ICE) plots are po ss ible usin g
the information shown for a typical unit in Figures 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
fMAX1 is defin ed by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadti me (the de nominato r) has bee n arbit rarily held to 10%
of the on -sta te tim e for a 50% duty factor. Other defini tion s
are possible. td(OFF)I and td(ON)I are defined in Figure 21.
Device turn-off delay can establish an a dditional fr eque n cy
limitin g con diti on for an applic at ion other than TJM.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The
allowable dissipation (PD) is defined by P D = (TJM - TC)/RθJC.
The sum of device s witching and conduction losses must not
exceed PD. A 50% duty factor was used (Figure 3) and the
conduction losses (PC) are appr o ximate d by
PC=(V
CE xI
CE)/2.
EON2 and EOFF are defined in the switching waveforms
shown in Figure 21. EON2 is the integral of the
instantaneous po wer loss (ICE x VCE) during turn-on and
EOFF is the integral of the instantaneous po wer loss
(ICE xV
CE) during turn-off. All tail los se s are in cl ude d in the
calculation for EOFF; i.e., the collector current equals zero
(ICE = 0).
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
Rev. H4
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
STAR*POWER is used under license
VCX™
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