H11D1, H11D2, H11D3, H11D4 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection, High BVCER Voltage FEATURES * CTR at IF = 10 mA, BVCER = 10 V: 20 % * Good CTR linearly with forward current * Low CTR degradation A 1 6 B C 2 5 C NC 3 4 E * Very high collector emitter breakdown voltage - H11D1/H11D2, BVCER = 300 V - H11D3/H11D4, BVCER = 200 V * Isolation test voltage: 5300 VRMS * Low coupling capacitance * High common mode transient immunity i179004 * Package with base connection * Lead (Pb)-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC DESCRIPTION AGENCY APPROVALS The H11D1, H11D2, H11D3, H11D4 are optocouplers with very high BVCER. They are intended for telecommunications applications or any DC application requiring a high blocking voltage. The H11D1, H11D2 are identical and the H11D3, H11D4 are identical. * UL1577, file no. E52744 system code H or J, double protection * DIN EN 60747-5-5 (VDE 0884) available with option 1 * BSI IEC 60950; IEC 60065 * FIMKO APPLICATIONS * Telecommunications * Replace relays ORDER INFORMATION PART REMARKS H11D1 CTR > 20 %, DIP-6 H11D2 CTR > 20 %, DIP-6 H11D3 CTR > 20 %, DIP-6 H11D4 CTR > 20 %, DIP-6 H11D1-X007 CTR > 20 %, SMD-6 (option 7) H11D1-X009 CTR > 20 %, SMD-6 (option 9) H11D2-X007 CTR > 20 %, SMD-6 (option 7) H11D3-X007 CTR > 20 %, SMD-6 (option 7) Note For additional information on the available options refer to option information. ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT VR 6 V mA INPUT Reverse voltage DC forward current Surge forward current Power dissipation www.vishay.com 288 t 10 s IF 60 IFSM 2.5 A Pdiss 100 mW For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83611 Rev. 1.6, 10-Dec-08 H11D1, H11D2, H11D3, H11D4 Optocoupler, Phototransistor Output, with Base Connection, High BVCER Voltage Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT H11D1 VCE 300 V H11D2 VCE 300 V H11D3 VCE 200 V H11D4 VCE 200 V H11D1 VCBO 300 V H11D2 VCBO 300 V H11D3 VCBO 200 V H11D4 VCBO 200 V VBEO 7 V Collector current IC 100 mA Power dissipation Pdiss 300 mW VISO 5300 VRMS 0.4 mm Creepage distance 7 mm Clearance distance 7 mm OUTPUT Collector emitter voltage Collector base voltage Emitter base voltage COUPLER Isolation test voltage between emitter and detector Insulation thickness between emitter and detector Comparative tracking index per DIN IEC 112/VDE 0303, part 1 175 VIO = 500 V, Tamb = 25 C RIO 1012 VIO = 500 V, Tamb = 100 C RIO 1011 Storage temperature range Tstg - 55 to + 150 C Operating temperature range Tamb - 55 to + 100 C Tj 100 C Tsld 260 C Isolation resistance Junction temperature Soldering temperature max. 10 s, dip soldering: distance to seating plane 1.5 mm Note Tamb = 25 C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. ELECTRICAL CHARACTERISTCS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. 1.1 1.5 UNIT INPUT Forward voltage IF = 10 mA VF Reverse voltage IR = 10 A VR Reverse current Capacitance Thermal resistance Document Number: 83611 Rev. 1.6, 10-Dec-08 6 V V VR = 6 V IR 0.01 VR = 0 V, f = 1 MHz CO 25 pF RthJA 750 K/W For technical questions, contact: optocoupler.answers@vishay.com 10 A www.vishay.com 289 H11D1, H11D2, H11D3, H11D4 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection, High BVCER Voltage ELECTRICAL CHARACTERISTCS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT OUTPUT Collector emitter breakdown voltage ICE = 1 mA, RBE = 1 M Emitter base breakdown voltage H11D1 BVCER 300 V H11D2 BVCER 300 V H11D3 BVCER 200 V H11D4 BVCER 200 V 7 IEB = 100 A BVEBO Collector emitter capacitance VCE = 10 V, f = 1 MHz CCE Collector base capacitance VCB = 10 V, f = 1 MHz Emitter base capacitance VEB = 5 V, f = 1 MHz Thermal resistance V 7 pF CCB 8 pF CEB 38 pF Rth 250 K/W CC 0.6 pF COUPLER Coupling capacitance Current transfer ratio IF = 10 mA, VCE = 10 V, RBE = 1 M IC/IF Collector emitter, saturation voltage IF = 10 mA, IC = 0.5 mA, RBE = 1 M VCEsat VCE = 200 V, RBE = 1 M Collector emitter, leakage current VCE = 300 V, RBE = 1 M, Tamb = 100 C 20 % 0.25 0.4 V nA H11D1 ICER 100 H11D2 ICER 100 nA H11D1 ICER 250 A H11D2 ICER 250 A Note Tamb = 25 C, unless otherwise specified. Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER Current transfer ratio TEST CONDITION PART SYMBOL MIN. CTR 20 IF = 10 mA, VCE = 10 V, RBE = 1 M TYP. MAX. UNIT % SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL Turn-on time IC = 2 mA (to be adjusted by varying IF), RL = 100 , VCC = 10 V MIN. TYP. MAX. UNIT ton 5 s Rise time IC = 2 mA (to be adjusted by varying IF), RL = 100 , VCC = 10 V tr 2.5 s Turn-off time IC = 2 mA (to be adjusted by varying IF), RL = 100 , VCC = 10 V toff 6 s Fall time IC = 2 mA (to be adjusted by varying IF), RL = 100 , VCC = 10 V tf 5.5 s Note Switching times measurement-test circuit and waveforms www.vishay.com 290 For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83611 Rev. 1.6, 10-Dec-08 H11D1, H11D2, H11D3, H11D4 Optocoupler, Phototransistor Output, with Base Connection, High BVCER Voltage Vishay Semiconductors TYPICAL CHARACTERISTICS 1.2 30 1.0 25 0.8 20 ICE (mA) NTCR Tamb = 25 C, unless otherwise specified 0.6 0.4 VCE = 10 V, normalized to IF = 10 mA, NCTR = f (IF) 0.2 0 ICE = f (VCE, IF) IF =100 A 15 IF = 80 A 10 IF = 60 A 5 IF = 40 A IF = 20 A 0 10 -4 10 -3 -2 -1 10 10 IF (A) ih11d1_02 -2 10 10 10 0 101 102 VCE (V) ih11d1_05 Fig. 4 - Output Characteristics Fig. 1 - Current Transfer Ratio (typ.) 100 1.2 VF = f (IF, TA) f = 1 MHz, CCE = f (VCE) CCB = f (VCB), CEB = f (VEB) 90 25 C 50 C 75 C 80 70 CXX (pF) VF (V) 1.1 1.0 CEB 60 50 40 CCB 30 20 CCE 10 0 0.9 10-1 100 101 102 IF (mA) ih11d1_03 10-2 100 10-1 101 102 VXX (V) ih11d1_06 Fig. 5 - Transistor Capacitances (Typ.) Fig. 2 - Diode Forward Voltage (typ.) 10-6 20 ICE = f (VCE, IB) 17.5 IF = 0, RBE = 1 M ICER = f (VCE) 10-7 15 IB =100 A 10-8 12.5 IB = 80 A 10 CCER (A) ICE (mA) -1 IB = 60 A 7.5 5 IB = 40 A 2.5 IB = 20 A 10-9 10-10 10-11 0 10-12 10-2 10-1 100 101 VCE (V) ih11d1_04 Fig. 3 - Output Characteristics Document Number: 83611 Rev. 1.6, 10-Dec-08 102 0 25 50 ih11d1_07 75 100 125 150 175 200 VCE (V) Fig. 6 - Collector Emitter Leakage Current (Typ.) For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com 291 H11D1, H11D2, H11D3, H11D4 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection, High BVCER Voltage 100 400 IF = f (TA) 90 80 300 Ptot (mW) 70 IF (mA) Ptot = f (TA) 350 60 50 40 30 250 200 Transistor 150 100 20 10 50 0 0 0 10 20 30 40 50 60 70 80 90 100 0 TA (C) ih11d1_08 Diode 10 20 30 40 50 60 70 80 90 100 TA (C) ih11d1_09 Fig. 7 - Permissible Loss Diode Fig. 8 - Permissible Power Dissipation Input 0 t off t on IF RL IC V CC td Output tr ts tr 0 VO 47 t pdoff t pdon 10 % 10 % 50 % 50 % 90 % 90 % GND ih11d1_01 Fig. 9 - Switching Times Measurement-Test Circuit and Waveform PACKAGE DIMENSIONS in inches (millimeters) 3 2 1 4 5 6 Pin one ID 0.248 (6.30) 0.256 (6.50) ISO method A 0.335 (8.50) 0.343 (8.70) 0.039 (1.00) min. 0.048 0.300 (7.62) (0.45) typ. 0.022 (0.55) 0.130 (3.30) 0.150 (3.81) 18 4 typ. 0.114 (2.90) 0.031 (0.80) min. 0.031 (0.80) 0.018 (0.45) 0.035 (0.90) 0.022 (0.55) i178004 www.vishay.com 292 0.100 (2.54) typ. 0.130 (3.0) 3 to 9 0.010 (0.25) typ. 0.300 to 0.347 (7.62 to 8.81) For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83611 Rev. 1.6, 10-Dec-08 H11D1, H11D2, H11D3, H11D4 Optocoupler, Phototransistor Output, with Base Connection, High BVCER Voltage Option 7 Vishay Semiconductors Option 9 0.375 (9.53) 0.395 (10.03) 0.300 (7.62) typ. 0.300 (7.62) ref. 0.028 (0.7) 0.180 (4.6) 0.160 (4.1) 0.315 (8.0) min. 0.331 (8.4) min. 0.406 (10.3) max. Document Number: 83611 Rev. 1.6, 10-Dec-08 0.0040 (0.102) 0.0098 (0.249) 0.012 (0.30) typ. 0.020 (0.51) 0.040 (1.02) 0.315 (8.00) min. For technical questions, contact: optocoupler.answers@vishay.com 15 max. 18494 www.vishay.com 293 H11D1, H11D2, H11D3, H11D4 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection, High BVCER Voltage OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 294 For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83611 Rev. 1.6, 10-Dec-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: H11D1 H11D2 H11D3 H11D1-X007 H11D1-X007T H11D1-X009 H11D1-X009T H11D2-X007 H11D3-X007 H11D1-X017T