Optocoupler, Phototransistor Output, with Base Connection,
High BVCER Voltage
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83611
288 Rev. 1.6, 10-Dec-08
H11D1, H11D2, H11D3, H11D4
Vishay Semiconductors
DESCRIPTION
The H11D1, H11D2, H11D3, H11D4 are optocouplers with
very high BVCER. They are intended for telecommunications
applications or any DC application requiring a high blocking
voltage.
The H11D1, H11D2 are identical and the H11D3, H11D4 are
identical.
FEATURES
•CTR at I
F = 10 mA, BVCER = 10 V: ≥ 20 %
• Good CTR linearly with forward current
• Low CTR degradation
• Very high collector emitter breakdown voltage
- H11D1/H11D2, BVCER = 300 V
- H11D3/H11D4, BVCER = 200 V
• Isolation test voltage: 5300 VRMS
• Low coupling capacitance
• High common mode transient immunity
• Package with base connection
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
AGENCY APPROVALS
• UL1577, file no. E52744 system code H or J, double
protection
• DIN EN 60747-5-5 (VDE 0884) available with option 1
• BSI IEC 60950; IEC 60065
•FIMKO
APPLICATIONS
• Telecommunications
• Replace relays
Note
For additional information on the available options refer to option information.
i179004
1
2
3
6
5
4
B
C
E
A
C
NC
ORDER INFORMATION
PART REMARKS
H11D1 CTR > 20 %, DIP-6
H11D2 CTR > 20 %, DIP-6
H11D3 CTR > 20 %, DIP-6
H11D4 CTR > 20 %, DIP-6
H11D1-X007 CTR > 20 %, SMD-6 (option 7)
H11D1-X009 CTR > 20 %, SMD-6 (option 9)
H11D2-X007 CTR > 20 %, SMD-6 (option 7)
H11D3-X007 CTR > 20 %, SMD-6 (option 7)
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
INPUT
Reverse voltage VR6V
DC forward current IF60 mA
Surge forward current t ≤ 10 µs IFSM 2.5 A
Power dissipation Pdiss 100 mW
Document Number: 83611 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 1.6, 10-Dec-08 289
H11D1, H11D2, H11D3, H11D4
Optocoupler, Phototransistor
Output, with Base Connection,
High BVCER Voltage
Vishay Semiconductors
Note
Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied
at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for
extended periods of the time can adversely affect reliability.
OUTPUT
Collector emitter voltage
H11D1 VCE 300 V
H11D2 VCE 300 V
H11D3 VCE 200 V
H11D4 VCE 200 V
Collector base voltage
H11D1 VCBO 300 V
H11D2 VCBO 300 V
H11D3 VCBO 200 V
H11D4 VCBO 200 V
Emitter base voltage VBEO 7V
Collector current IC100 mA
Power dissipation Pdiss 300 mW
COUPLER
Isolation test voltage
between emitter and detector VISO 5300 VRMS
Insulation thickness between emitter
and detector ≥ 0.4 mm
Creepage distance ≥ 7mm
Clearance distance ≥ 7mm
Comparative tracking index per DIN IEC 112/VDE 0303, part 1 175
Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω
VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω
Storage temperature range Tstg - 55 to + 150 °C
Operating temperature range Tamb - 55 to + 100 °C
Junction temperature Tj100 °C
Soldering temperature max. 10 s, dip soldering: distance
to seating plane ≥ 1.5 mm Tsld 260 °C
ELECTRICAL CHARACTERISTCS
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 10 mA VF1.1 1.5 V
Reverse voltage IR = 10 µA VR6V
Reverse current VR = 6 V IR0.01 10 µA
Capacitance VR = 0 V, f = 1 MHz CO25 pF
Thermal resistance RthJA 750 K/W
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83611
290 Rev. 1.6, 10-Dec-08
H11D1, H11D2, H11D3, H11D4
Vishay Semiconductors Optocoupler, Phototransistor
Output, with Base Connection,
High BVCER Voltage
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
Note
Switching times measurement-test circuit and waveforms
OUTPUT
Collector emitter breakdown voltage ICE = 1 mA, RBE = 1 MΩ
H11D1 BVCER 300 V
H11D2 BVCER 300 V
H11D3 BVCER 200 V
H11D4 BVCER 200 V
Emitter base breakdown voltage IEB = 100 µA BVEBO 7V
Collector emitter capacitance VCE = 10 V, f = 1 MHz CCE 7pF
Collector base capacitance VCB = 10 V, f = 1 MHz CCB 8pF
Emitter base capacitance VEB = 5 V, f = 1 MHz CEB 38 pF
Thermal resistance Rth 250 K/W
COUPLER
Coupling capacitance CC0.6 pF
Current transfer ratio IF = 10 mA, VCE = 10 V,
RBE = 1 MΩIC/IF20 %
Collector emitter,
saturation voltage
IF = 10 mA, IC = 0.5 mA,
RBE = 1 MΩVCEsat 0.25 0.4 V
Collector emitter, leakage current
VCE = 200 V, RBE = 1 MΩH11D1 ICER 100 nA
H11D2 ICER 100 nA
VCE = 300 V, RBE = 1 MΩ,
Tamb = 100 °C
H11D1 ICER 250 µA
H11D2 ICER 250 µA
CURRENT TRANSFER RATIO
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Current transfer ratio IF = 10 mA, VCE = 10 V,
RBE = 1 MΩCTR 20 %
SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Turn-on time IC = 2 mA (to be adjusted by varying IF),
RL = 100 Ω, VCC = 10 V ton 5µs
Rise time IC = 2 mA (to be adjusted by varying IF),
RL = 100 Ω, VCC = 10 V tr2.5 µs
Turn-off time IC = 2 mA (to be adjusted by varying IF),
RL = 100 Ω, VCC = 10 V toff 6µs
Fall time IC = 2 mA (to be adjusted by varying IF),
RL = 100 Ω, VCC = 10 V tf5.5 µs
ELECTRICAL CHARACTERISTCS
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Document Number: 83611 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 1.6, 10-Dec-08 291
H11D1, H11D2, H11D3, H11D4
Optocoupler, Phototransistor
Output, with Base Connection,
High BVCER Voltage
Vishay Semiconductors
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Fig. 1 - Current Transfer Ratio (typ.)
Fig. 2 - Diode Forward Voltage (typ.)
Fig. 3 - Output Characteristics
Fig. 4 - Output Characteristics
Fig. 5 - Transistor Capacitances (Typ.)
Fig. 6 - Collector Emitter Leakage Current (Typ.)
0
0.2
0.4
0.6
0.8
1.0
1.2
10-4 10-3 10-2 10-1
NTCR
IF (A)
ih11d1_02
VCE = 10 V,
normalized to IF = 10 mA,
NCTR = f (IF)
1.2
1.1
1.0
0.9
10-1 101102
100
VF (V)
IF (mA)
ih11d1_03
VF = f (IF, TA)
25 °C
50 °C
75 °C
20
17.5
15
12.5
10
7.5
5
2.5
0
10-2 101102
10-1 100
ICE (mA)
VCE (V)
ih11d1_04
ICE = f (VCE, IB)
IB = 100 µA
IB = 80 µA
IB = 60 µA
IB = 40 µA
IB = 20 µA
30
25
20
15
10
5
0
10-2 101102
10-1 100
ICE (mA)
VCE (V)
ih11d1_05
ICE = f (VCE, IF)
IF = 100 µA
IF = 80 µA
IF = 60 µA
IF = 40 µA
IF = 20 µA
100
90
80
70
60
50
40
30
20
10
0
10-2 101102
10-1 100
CXX (pF)
VXX (V)
ih11d1_06
f = 1 MHz,
CCE = f (VCE)
CCB = f (VCB), CEB = f (VEB)
CCB
CCE
CEB
10-6
10-7
10-8
10-9
10-10
10-11
10-12
0 25 50 75 100 125 150 175 200
CCER (A)
VCE (V)
ih11d1_07
ICER = f (VCE)
IF = 0, RBE = 1 MΩ
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83611
292 Rev. 1.6, 10-Dec-08
H11D1, H11D2, H11D3, H11D4
Vishay Semiconductors Optocoupler, Phototransistor
Output, with Base Connection,
High BVCER Voltage
Fig. 7 - Permissible Loss Diode Fig. 8 - Permissible Power Dissipation
Fig. 9 - Switching Times Measurement-Test Circuit and Waveform
PACKAGE DIMENSIONS in inches (millimeters)
100
90
80
70
60
50
40
30
20
10
0
0302010 40 50 60 70 80 90 100
I
F
(mA)
T
A
(°C)
ih11d1_08
I
F
= f (T
A
)
400
350
300
250
200
150
100
50
0
0302010 40 50 60 70 80 90 100
Ptot (mW)
TA (°C)
ih11d1_09
Transistor
Diode
Ptot = f (TA)
ih11d1_01
toff
tr
10 %
50 %
90 %
ts
tpdoff
tpdon
ton
tr
td
Output
Input
10 %
50 %
90 %
0
0
IF
RL
IC
VO
VCC
GND
47 Ω
i178004
0.010 (0.25)
typ.
0.114 (2.90)
0.130 (3.0)
0.130 (3.30)
0.150 (3.81)
0.031 (0.80) min.
0.300 (7.62)
typ.
0.031 (0.80)
0.035 (0.90)
0.100 (2.54) typ.
0.039
(1.00)
min.
0.018 (0.45)
0.022 (0.55)
0.048
0.022 (0.55)
0.248 (6.30)
0.256 (6.50)
0.335 (8.50)
0.343 (8.70)
Pin one ID
6
5
4
12
3
18°
3° to 9°
0.300 to 0.347
(7.62 to 8.81)
4°
typ.
ISO method A
(0.45)
Document Number: 83611 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com
Rev. 1.6, 10-Dec-08 293
H11D1, H11D2, H11D3, H11D4
Optocoupler, Phototransistor
Output, with Base Connection,
High BVCER Voltage
Vishay Semiconductors
0.315 (8.0)
min.
0.300 (7.62)
typ.
0.180 (4.6)
0.160 (4.1)
0.331 (8.4)
min.
0.406 (10.3)
max.
0.028 (0.7)
Option 7
18494
min.
0.315 (8.00)
0.020 (0.51)
0.040 (1.02)
0.300 (7.62)
ref.
0.375 (9.53)
0.395 (10.03)
0.012 (0.30) typ.
0.0040 (0.102)
0.0098 (0.249)
15° max.
Option 9
www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83611
294 Rev. 1.6, 10-Dec-08
H11D1, H11D2, H11D3, H11D4
Vishay Semiconductors Optocoupler, Phototransistor
Output, with Base Connection,
High BVCER Voltage
OZONE DEPLETING SUBSTANCES POLICY STATEMENT
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with
respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use
within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in
the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency
(EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do
not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application by the
customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall
indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any
claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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All product specifications and data are subject to change without notice.
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