2N3707 2N3710
2N3708 2N3711
2N3709
SILICON
NPN TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3707 series
devices are silicon NPN transistors designed for
low level, low noise (2N3707), low level, high gain
(2N3708, 2N3709, 2N3710, 2N3711) applications.
Recommended PNP complementary series is 2N4058
thru 2N4062.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCEO 30 V
Emitter-Base Voltage VEBO 6.0 V
Continuous Collector Current IC 200 mA
Power Dissipation PD 625 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=20V 100 nA
IEBO V
EB=6.0V 100 nA
BVCEO I
C=1.0mA 30 V
VCE(SAT) I
C=10mA, IB=0.5mA 1.0 V
VBE(ON) V
CE=5.0V, IC=1.0mA 0.5 1.0 V
NF VCE=5.0V, IC=100μA, RG=10KΩ,
BW=15.7kHz (2N3707 only) 5.0 dB
2N3707 2N3708 2N3709 2N3710 2N3711
SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX
hFE V
CE=5.0V, IC=100μA 100 400 - - - - - - - -
hFE V
CE=5.0V, IC=1.0mA - - 45 660 45 165 90 330 180 660
hfe V
CE=5.0V, IC=100μA, f=1.0kHz 100 550 - - - - - - - -
hfe V
CE=5.0V, IC=1.0mA, f=1.0kHz - - 45 800 45 250 90 450 180 800
R1 (13-March 2014)
www.centralsemi.com