P4KE27CA-E3/54 - Vishay [General Semiconductor]

P4KE6.8A thru P4KE540A

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Revision: 08-May-12 1Document Number: 88365

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

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TRANSZORB® Transient Voltage Suppressors

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional types, use CA suffix (e.g. P4KE440CA).

Electrical characteristics apply in both directions.

FEATURES

• Glass passivated chip junction

• Available in uni-directional and bi-directional

• 400 W peak pulse power capability with a

10/1000 μs waveform, repetitive rate (duty

cycle): 0.01 %

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, automotive, and telecommunication.

MECHANICAL DATA

Case: DO-204AL, molded epoxy body over passivated chip

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Note

• P4KE250CA to P4KE540A and P4KE250A to P4KE440CA for

commercial grade only

Polarity: For uni-directional types the color band denotes

cathode end, no marking on bi-directional types

Notes

(1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2

(2) 8.3 ms single half-sine wave or equivalent square wave, duty cycle = 4 pulses per minute maximum

(3) VF = 3.5 V for P4KE220A and below; VF = 5.0 V for P4KE250A and above

PRIMARY CHARACTERISTICS

VBR uni-directional 6.8 V to 540 V

VBR bi-directional 6.8 V to 440 V

PPPM 400 W

PD1.5 W

IFSM (uni-directional only) 40 A

TJ max. 175 °C

DO-204AL (DO-41)

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig.1) PPPM 400 W

Peak pulse current with a 10/1000 μs waveform (1) IPPM See next table A

Power dissipation on infinite heatsink at TL = 75 °C (fig. 5) PD1.5 W

Peak forward surge current 8.3 ms single half-sine wave uni-directional only (2) IFSM 40 A

Maximum instantaneous forward voltage at 25 A for uni-directional only (3) VF3.5/5.0 V

Operating junction and storage temperature range TJ, TSTG - 55 to + 175 °C

P4KE6.8A thru P4KE540A

www.vishay.com Vishay General Semiconductor

Revision: 08-May-12 2Document Number: 88365

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Notes

(1) Pulse test: tp  50 ms

(2) Surge current waveform per fig. 3 and derate per fig. 2

(3) For bi-directional types with VWM of 10 V and less the ID limit is doubled

(4) All terms and symbols are consistent with ANSI/EEE CA62.35

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

DEVICE

TYPE

BREAKDOWN

VOLTAGE

VBR AT IT (1)

(V)

TEST

CURRENT

(mA)

STAND-OFF

VOLTAGE

VWM

(V)

MAXIMUM

REVERSE

LEAKAGE

AT VWM

ID (3)

(μA)

MAXIMUM

PEAK

PULSE

CURRENT

IPPM (2)

(A)

MAXIMUM

CLAMPING

VOLTAGE

AT IPPM

VC (V)

MAXIMUM

TEMPERATURE

COEFFICENT

AT VBR

(%/°C)

MIN. MAX.

P4KE6.8A 6.45 7.14 10 5.80 1000 38.1 10.5 0.057

P4KE7.5A 7.13 7.88 10 6.40 500 35.4 11.3 0.061

P4KE8.2A 7.79 8.61 10 7.02 200 33.1 12.1 0.060

P4KE9.1A 8.65 9.55 1.0 7.78 50 29.9 13.4 0.068

P4KE10A 9.5 10.5 1.0 8.55 10 27.6 14.5 0.073

P4KE11A 10.5 11.6 1.0 9.40 5.0 25.6 15.6 0.075

P4KE12A 11.4 12.6 1.0 10.2 1.0 24.0 16.7 0.078

P4KE13A 12.4 13.7 1.0 11.1 1.0 22.0 18.2 0.081

P4KE15A 14.3 15.8 1.0 12.8 1.0 18.9 21.2 0.084

P4KE16A 15.2 16.8 1.0 13.6 1.0 17.8 22.5 0.086

P4KE18A 17.1 18.9 1.0 15.3 1.0 15.9 25.2 0.088

P4KE20A 19.0 21.0 1.0 17.1 1.0 14.4 27.7 0.090

P4KE22A 20.9 23.1 1.0 18.8 1.0 13.1 30.6 0.092

P4KE24A 22.8 25.2 1.0 20.5 1.0 12.0 33.2 0.094

P4KE27A 25.7 28.4 1.0 23.1 1.0 10.7 37.5 0.096

P4KE30A 28.5 31.5 1.0 25.6 1.0 9.7 41.4 0.097

P4KE33A 31.4 34.7 1.0 28.2 1.0 8.8 45.7 0.098

P4KE36A 34.2 37.8 1.0 30.8 1.0 8.0 49.9 0.099

P4KE39A 37.1 41.0 1.0 33.3 1.0 7.4 53.9 0.100

P4KE43A 40.9 45.2 1.0 36.8 1.0 6.7 59.3 0.101

P4KE47A 44.7 49.4 1.0 40.2 1.0 6.2 64.8 0.101

P4KE51A 48.5 53.6 1.0 43.6 1.0 5.7 70.1 0.102

P4KE56A 53.2 58.8 1.0 47.8 1.0 5.2 77.0 0.103

P4KE62A 58.9 65.1 1.0 53.0 1.0 4.7 85.0 0.104

P4KE68A 64.6 71.4 1.0 58.1 1.0 4.3 92.0 0.104

P4KE75A 71.3 78.8 1.0 64.1 1.0 3.9 103 0.105

P4KE82A 77.9 86.1 1.0 70.1 1.0 3.5 113 0.105

P4KE91A 86.5 95.5 1.0 77.8 1.0 3.2 125 0.106

P4KE100A 95.0 105 1.0 85.5 1.0 2.9 137 0.106

P4KE110A 105 116 1.0 94.0 1.0 2.6 152 0.107

P4KE120A 114 126 1.0 102 1.0 2.4 165 0.107

P4KE130A 124 137 1.0 111 1.0 2.2 179 0.107

P4KE150A 143 158 1.0 128 1.0 1.9 207 0.108

P4KE160A 152 168 1.0 136 1.0 1.8 219 0.108

P4KE170A 162 179 1.0 145 1.0 1.7 234 0.108

P4KE180A 171 189 1.0 154 1.0 1.6 246 0.108

P4KE200A 190 210 1.0 171 1.0 1.5 274 0.108

P4KE220A 209 231 1.0 185 1.0 1.2 328 0.108

P4KE250A 237 263 1.0 214 1.0 1.2 344 0.110

P4KE300A 285 315 1.0 256 1.0 1.00 414 0.110

P4KE350A 333 368 1.0 300 1.0 0.83 482 0.110

P4KE400A 380 420 1.0 342 1.0 0.73 548 0.110

P4KE440A 418 462 1.0 376 1.0 0.66 602 0.110

P4KE480A 456 504 1.0 408 1.0 0.61 658 0.110

P4KE510A 485 535 1.0 434 1.0 0.57 698 0.110

P4KE540A 513 567 1.0 459 1.0 0.54 740 0.110

P4KE6.8A thru P4KE540A

www.vishay.com Vishay General Semiconductor

Revision: 08-May-12 3Document Number: 88365

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

(1) AEC-Q101 qualified

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

Fig. 1 - Peak Pulse Power Rating Curve

Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature

Fig. 3 - Pulse Waveform

Fig. 4 - Typical Junction Capacitance Uni-Directional

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL VALUE UNIT

Typical thermal resistance, junction to lead RJL 66 °C/ W

Typical thermal resistance, junction to ambient LLead = 10 mm RJA 100

ORDERING INFORMATION (Example)

PREFERRED PIN UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

P4KE6.8A-E3/54 0.350 54 5500 13" diameter paper tape and reel

P4KE6.8AHE3/54 (1) 0.350 54 5500 13" diameter paper tape and reel

100

0.1

Non-Repetitive Pulse

Waveform shown in Fig. 3

= 25 °C

0.1 1 10 100 1000 10 000

PPM

- Peak Pulse Power (kW)

- Pulse Width (µs)

100

0 25 50 75 100 125 150 175 200

Peak Pulse Power (P

) or Current (I

)

Derating in Percentage (%)

TJ - Initial Temperature (°C)

0 1.0 2.0 3.0 4.0

100

150

t - Time (ms)

IPPM - Peak Pulse Current, % IRSM

= 10 µs

Peak Value

PPM

Half Value -

PPM

10/1000 µs Waveform

as defined by R.E.A.

= 25 °C

Pulse Width (t

)

is defined as the Point

where the Peak Current

Decays to 50 % of I

PPM

100

1000

10 000

1 10 100 1000

Measured at

Zero Bias

Measured at Stand-Off

Voltage V

= 25 °C

f = 1.0 MHz

sig

= 50 mV

p-p

- Junction Capacitance (pF)

VBR - Breakdown Voltage (V)

P4KE6.8A thru P4KE540A

www.vishay.com Vishay General Semiconductor

Revision: 08-May-12 4Document Number: 88365

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 5 - Power Derating Curve

Fig. 6 - Maximum Non-Repetitive Forward Surge Current

Uni-Directional Only

Fig. 7 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

- Power Dissipation (%)

TL - Lead Temperature (°C)

60 Hz

Resistive or

Inductive Load

100

0 25 50 75 100 125 150 175 200

L = 0.375" (9.5 mm)

Lead Lengths

1 10 100

100

Number of Cycles at 60 Hz

Peak Forward Surge Current (A)

TJ = TJ Max.

8.3 ms Single Half Sine-Wave

100

0.001 0.01 0.1 1 10 100 1000

tp - Pulse Duration (s)

Transient Thermal Impedance (°C/W)

DO-204AL (DO-41)

1.0 (25.4)

MIN.

1.0 (25.4)

MIN.

0.205 (5.2)

0.160 (4.1)

0.107 (2.7)

0.080 (2.0)

DIA.

0.034 (0.86)

0.028 (0.71)

DIA.

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Revision: 12-Mar-12 1Document Number: 91000

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