FDS6670A | FAIRCHILD Ee SEMICONDUCTOR FDS6670A General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Absolute Maximum Ratings _T, = 25C unless other wise noted Single N-Channel, Logic Level, PowerTrench MOSFET July 1998 Features B 13.A, 30 V. Rosey, = 0.0082 @ V,,=10V Rosiom = 9-010 @ V,, = 4.5 V. Fast switching speed. = Low gate charge (35 nC tyical). = High performance trench technology for extremely low Rosin: = High power and current handling capability. a sft Symbol | Parameter FDS6670A Units Vogs Drain-Source Voltage 30 Vass Gate-Source Voltage +20 is Drain Current - Continuous (Note ta) 13 - Pulsed 50 Py Power Dissipation for Single Operation _(Note 1a) 25 WwW (Note 1b) 1.2 (Note 1) 1 TT sr Operating and Storage Temperature Range -55 to 150 C THERMAL CHARACTERISTICS Rasa Thermal Resistance, Junction-to-Ambient (note 1a) 50 C Rac Thermal Resistance, Junction-to-Case (Note 1) 25 C 2-28 _| FDS6670A Rev.DElectrical Characteristics (T, = 25 C unless otherwise noted ) U Symbol _| Parameter Conditions |_min | typ | max | units |) OFF CHARACTERISTICS 3 BVocs Drain-Source Breakdown Voltage Vg = OV, 1)=250 nA | 30 vse ABV co/AT, Breakdown Voltage Temp. Coefficient |,= 250 pA, Referenced to 25C 20 mV /C > loss Zero Gate Voltage Drain Current Vos =24V, Veg= OV 1 LA T, =55C 10 WA lecce | Gate - Body Leakage, Forward Veg = 20V, Vog= OV | | 100 | nA logsa Gate - Body Leakage, Reverse Vog= -20V. Vig= OV -100 nA ON CHARACTERISTICS | (note) Vesa Gate Threshold Voltage Vog = Vas: Ip = 250 WA 1 1.6 3 Vv Nose Jat, Gate Threshold Voltage Temp. Coefficient [= 250 pA, Referenced to 25C 45 mv /C Posiony Static Drain-Source On-Resistance Vog= 10V, 1,=13A 0.0063 | 0.008 Q _{t, =128 0.009 | 0.014 Vog= 4.5 V, 15= 105A 0.0082 | 0.01 lens, On-State Drain Current Vgg = 10 V, Vog=5 V 50 Ors Forward Transconductance Vos = 15 V, [>= 19 A 50 8 DYNAMIC CHARACTERISTICS C.. Input Capacitance Vog = 15 V, Vag = 0 V, 3200 pF C.,, Output Capacitance = 1.0 MHz 820 pF om Reverse Transfer Capacitance 400 | pF SWITCHING CHARACTERISTICS (nowe2) toon) Tum - On Delay Time Vog=10V, [p= 1A 15 27 ns t, Tum - On Rise Time Vog2 10V, Rog = 6 2 415 27 ns toon Tum - Off Delay Time 85 105 ns t Turn - Off Fall Time 42 68 ns Q, Total Gate Charge [Vp = 15 V, 1) = 135A, 35 50 nc Q,, Gate-Source Charge Vos= 5 V 9 nc Q,, Gate-Drain Charge 16 nc DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS lg | Maximum Continuous Drain-Source Diode Forward Current 21 | A Vso | Drain-Source Diode Forward Voltage [Veg = OV, = 21A tee o71 | 12 | Vv Notes: 1. R,,is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R,,,is guaranteed by design while R,,, is determined by the user's board design. gemma ame smgowouawe ae x 8 oe Scale 1: 1 on letter size paper 2. Pulse Test: Pulse Width < 300us, Duty Cycle < 2.0%. 9-29 FOS6670A Rev.DFDS6670A Typical Electrical Characteristics Ip, DRAIN-SOURCE CURRENT (A) . 15 2 Vos: DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Ripsion) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE T, JUNCTION TEMPERATURE (C) Figure 3. On-Resistance Variation with Temperature. 0 . . Vgg = 5.0V | T a, 50 fF - - 1 ~F Z tT ne | on _ ig ! g | 3B 30-- 4 } > z < t | & 20 - es 8 : oa Ao oi a+ 4 1 1.5 2 25 3 3.5 4 Yes- GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. Ros(on), NORMALIZED DRAIN-SOURCE ON-RESISTANCE R DS(ON) , ON-RESISTANCE (OHM) lg, REVERSE DRAIN CURRENT (A) we nn a 0 10 20 30 40 50 1g , DRAIN CURRENT (A} Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.03 0.025 Vg - GATE TO SOURCE VOLTAGE (V) Figure 4. On Resistance Variation with Gate-to-Source Voltage. 02 04 06 08 1 1.2 Vop: BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 2-30 FDS6670A Rev.DTypical Electrical Thermal Characteristics voz99sad CAPACITANCE (pF) Veg . GATE-SOURCE VOLTAGE (V) Qg . GATE CHARGE (nC) Vpg DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 vey 30 SINGLE PULSE < Rya=125C/w = 10 qZ 5 aa z a1 & Z 05 s & Vas =10V i a 01: SINGLE PULSE 0.05 = Rasa= 125C/W = Ty =25C 0.01 Lo. dbo Ld. 0.05 0.1 0.5 1 2 5 10 30 50 Vos: DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. oy 9 os 22 g2 . 5a Rava (t) = rit)" Ro gua We O12 Rosa = 125C diz - - we 0.05 No aE 0.02 zi 001 Z& 2 a 0.005 ez Ty Ta =P Rat) ~ & 9.002 ~ Duty Cycle, D=1, fy 0.001 | Lo 0.0001 0.001 0.01 04 1 10 100 300 1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Nole 1c. Transient thermal response will change depending on the circuit board design. 9-31 FDS6670A Rev.D