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IXYS reserves the right to change limits, test conditions and dimensions.
FMM 65-015P
ID25 = 65 A
VDSS = 150 V
RDSon typ. = 12 mΩΩ
ΩΩ
Ω
Trench Power MOSFET
Phaseleg Topology
in ISOPLUS i4-PACTM
Features
• trench MOSFET
- very low on state resistance RDSon
- fast switching
- fast body diode
• ISOPLUS i4-PACTM package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered E 72873
Applications
• automotive and industrial vehicles
- AC drives
- choppers - replacing series resistors
for DC drives, heating etc.
- DC-DC converters
- electronic switches -replacing relays
and fuses
• power supplies
- DC-DC converters
- solar inverters
• battery supplied systems
- choppers or inverters for drives
- battery chargers
MOSFET T1/T2
Symbol Conditions Maximum Ratings
VDSS TVJ = 25°C to TVJmax 150 V
VGS ±20 V
ID25 TC = 25°C 65 A
ID90 TC = 90°C 50 A
IF25 (body diode) TC = 25°C 65 A
IF90 (body diode) TC = 90°C 50 A
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
RDSon VGS = 10 V; ID = ID90 12 22 mΩ
VGSth VDS = 20 V; ID = 1 mA 2 4 V
IDSS VDS = VDSS; VGS = 0 V; TVJ = 25°C 10 µA
TVJ = 125°C 0.1 mA
IGSS VGS = ±20 V; VDS = 0 V 200 nA
Qg230 nC
Qgs 45 nC
Qgd 90 nC
td(on) 35 ns
tr80 ns
td(off) 230 ns
tf100 ns
VF(body diode) IF = 32.5 A; VGS = 0 V 0.9 1.3 V
trr (body diode) IF = 20A; -di/dt = 100A/µs; VDS = 30V 130 ns
RthJC 0.6 K/W
RthJH with heat transfer paste 1.2 K/W
VGS= 10 V; VDS = 120 V; ID = 75 A
VGS= 10 V; VDS = 0.5 • VDSS
ID = 30 A; RG = 5.6 Ω
Preliminary data T1
T2
3
5
4
1
2
1
5