IRF9Z34N
HEXFET® Power MOSFET
PD - 9.1485B
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -1 9
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V - 14 A
IDM Pulsed Drain Current -68
PD @TC = 25°C Power Dissipation 68 W
Linear Derating Factor 0.45 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy180 mJ
IAR Avalanche Current-10 A
EAR Repetitive Avalanche Energy6.8 mJ
dv / dt Peak Diode Recovery dv/dt -5.0 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 2.2
RθCS Case-to-Sink, Flat, Greased Surface 0.50 –– – °C/W
RθJA Junction-to-Ambient ––– 62
Thermal Resistance
VDSS = -55V
RDS(on) = 0.10Ω
ID = -19A
TO-220AB
lAdvanced Process Technology
lDynamic dv/dt Rating
l175°C Operating Temperature
lFast Switching
lP-Channel
lFully Avalanche Rated
Description
8/25/97
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IRF9Z34N
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode)
––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -10A, VGS = 0V
trr Reverse Recovery Time ––– 54 82 ns TJ = 25°C, IF = -10A
Qrr Reverse RecoveryCharge ––– 110 160 nC di/dt = -100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -55 – –– – –– V V GS = 0V, ID = -250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– -0.05 ––– V/°C Reference to 25°C, I D = -1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.10 ΩVGS = -10V, ID = -10A
VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = VGS, ID = -250µA
gfs Forward Transconductance 4.2 ––– ––– S V DS = 25V, ID = -10A
––– ––– -25 µA VDS = -55V, VGS = 0V
––– ––– -250 VDS = -44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 10 0 V GS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V
QgTotal Gate Charge ––– –– – 35 I D = -10A
Qgs Gate-to-Source Charge ––– ––– 7.9 nC V DS = -44V
Qgd Gate-to-Drain ("Miller") Charge –– – ––– 16 VGS = -10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 13 ––– V DD = -28V
trRise Time ––– 55 ––– I D = -10A
td(off) Turn-Off Delay Time ––– 30 ––– R G = 13Ω
tfFall Time ––– 41 ––– RD = 2.6Ω, See Fig. 10
Between lead,
––– ––– 6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance ––– 620 ––– V GS = 0V
Coss Output Capacitance ––– 280 ––– pF VDS = -25V
Crss Reverse Transfer Capacitance ––– 140 ––– ƒ = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LDInternal Drain Inductance
LSInternal Source Inductance –– – –––
IGSS
ns
4.5
7.5
IDSS Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 ) ISD ≤ -10A, di/dt ≤ -290A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
Starting TJ = 25°C, L = 3.6mH
RG = 25Ω, IAS = -10A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%.
S
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Source-Drain Ratings and Characteristics
A
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-19
-68
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IRF9Z34N
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
0.1 1 10 100
D
DS
20µs PULSE W IDTH
T = 25°C
cA
-I , Drain-to-S ource Current (A)
-V , D rain -to -S o ur c e Vo ltage (V )
V GS
TO P - 15 V
- 1 0V
- 8 .0V
- 7 .0V
- 6 .0V
- 5 .5V
- 5 .0V
B OT T OM - 4.5V
-4.5 V
1
10
100
0.1 1 10 100
D
DS
A
-I , Drain-to-Source Current (A)
-V , Dr a in -to-So urc e Voltag e (V )
V GS
TO P - 15 V
- 1 0V
- 8 .0V
- 7 .0V
- 6 .0V
- 5 .5V
- 5 .0V
B OT T OM - 4.5V
-4.5V
20µs PULSE WIDTH
T = 175°C
C
1
10
100
45678910
T = 25°C
J
GS
D
A
-I , Dra in-to -So u rc e Cu rr e n t (A)
-V , G ate -to -Sou r ce Vo l ta g e ( V )
V = - 25V
20µs PULS E WIDT H
DS
T = 175°C
J
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , J u nc tion Tempe r ature ( °C)
R , D rain-to -Sourc e O n R e sistan ce
DS(on)
(Normalized)
A
V = - 1 0V
GS
I = -17 A
D
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IRF9Z34N
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
4
8
12
16
20
0 10203040
G
GS
A
-V , Gate-to-Sou rce Voltag e (V)
Q , Tota l Gate C h arge ( n C)
FO R TEST CIRCUIT
SEE FIGURE 1 3
I = - 1 0A
V = - 4 4V
V = - 2 8V
D
DS
DS
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
T = 25 °C
J
V = 0V
GS
SD
SD
A
-I , Reve rse Dra in C urrent (A)
-V , S o urc e- to-Dra in Volt ag e (V)
T = 175°C
J
1
10
100
1000
1 10 100
O PERAT ION IN THIS AR EA LIM ITED
BY R
DS(on)
10ms
A
-I , D rain Curre nt (A )
-V , Dr a in- to-So urc e V olta ge (V )
DS
D
10µs
100µs
1ms
T = 25 ° C
T = 17 5 ° C
Sin gle Pu lse
C
J
0
200
400
600
800
1000
1200
1 10 100
C, Capacitance (pF)
A
DS
-V , Dra in- to-Sour c e V olt ag e (V )
V = 0V, f = 1 MHz
C = C + C , C SHO RT ED
C = C
C = C + C
GS
is s gs gd ds
rss gd
oss d s gd
C
iss
C
oss
C
rss
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IRF9Z34N
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RGD.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150 175
0
5
10
15
20
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
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IRF9Z34N
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Q
G
Q
GS
Q
GD
V
G
Charge
-10V
D.U.T. V
DS
I
D
I
G
-3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tpV
(BR)DSS
I
AS
R
G
IAS
0.01
Ω
t
p
D.U.T
L
VDS
VDD
DRIVER A
15V
-20V
0
100
200
300
400
500
25 50 75 100 125 150 175
J
E , Sin gle Pu lse Avalanche E nerg y (m J)
AS
A
Starting T , Junction Temperature (°C)
I
T O P - 4.2 A
- 7 .2A
BOTTOM -10A
D
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IRF9Z34N
Peak Diode Recovery dv/dt Test Circuit
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T*Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
* Reverse Polarity of D.U.T for P-Channel
VGS
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 14. For P-Channel HEXFETS
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IRF9Z34N
LEAD ASSIGNMENTS
1 - G A T E
2 - D R AIN
3 - SOURCE
4 - D R AIN
- B -
1.32 (.052)
1.22 (.048)
3X 0.5 5 (.02 2)
0.4 6 (.01 8)
2.92 (.115)
2.64 (.104)
4.69 (.185)
4.20 (.165)
3X 0.93 (.037)
0.69 (.027)
4.0 6 (.16 0)
3.5 5 (.14 0)
1.15 (.045)
M IN
6.4 7 (.25 5)
6.1 0 (.24 0)
3.78 (.14 9)
3.54 (.13 9)
- A -
1 0.5 4 (.41 5)
1 0.2 9 (.40 5)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
3X 1.40 (.055)
1.15 (.045)
2.54 (.100)
2X
0 .3 6 (.01 4) M B A M
4
1 2 3
NOTES:
1 D IM E N S IO N IN G & T O L ER AN C IN G P ER A N S I Y 14 .5 M , 1 98 2. 3 O U TL IN E C O N FO R M S TO JE D E C OUT LIN E T O -2 20 A B.
2 CO NTR OLLING D IMENSIO N : INCH 4 HEATSIN K & LEAD M EASUREMENTS D O NOT INCLUDE BU RRS.
PART NUM BER
INTERNATIONAL
RECTIF IE R
L OG O
EX AM PLE : T HIS IS AN IRF1010
WITH ASSEMBLY
L OT CODE 9 B1 M
ASSEM BLY
L OT CODE
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
9246
IRF1010
9 B 1 M
A
Part Marking Information
TO-220AB
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
PART NUM BER
INTERNATIONAL
RECTIF IE R
L OG O
EX AM PLE : T HIS IS AN IRF1010
WITH ASSEMBLY
L OT CODE 9 B1 M
ASSEM BLY
L OT CODE
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
9246
IRF1010
9 B 1 M
A
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 8/97
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Note: For the most current drawings please refer to the IR website at:
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