SRAM MT5C1008 Austin Semiconductor, Inc. 128K x 8 SRAM PIN ASSIGNMENT (Top View) WITH DUAL CHIP ENABLE 32-Pin DIP (C, CW) 32-Pin CSOJ (SOJ) AVAILABLE AS MILITARY SPECIFICATIONS NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS *SMD 5962-89598 *MIL-STD-883 FEATURES * * * * * * High Speed: 12, 15, 20, 25, 30, 35, 45, 55 and 70 ns Battery Backup: 2V data retention Low power standby High-performance, low-power CMOS process Single +5V (+10%) Power Supply Easy memory expansion with CE1\, CE2, and OE\ options. * All inputs and outputs are TTL compatible -12 (contact factory) -15 -20 -25 -35 -45 -55* -70* * Package(s)* Ceramic DIP (400 mil) Ceramic DIP (600 mil) Ceramic LCC Ceramic LCC Ceramic Flatpack Ceramic SOJ Ceramic SOJ C CW EC ECA F DCJ SOJ * 2V data retention/low power L NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 VCC A15 CE2 WE\ A13 A8 A9 A11 OE\ A10 CE\ DQ8 DQ7 DQ6 DQ5 DQ4 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 32-Pin LCC (ECA) A12 A14 A10 6 NC VCC A15 CE2 4 3 2 1 32 31 30 NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 DQ2 DQ3 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 CE2 WE\ A13 A8 A9 A11 OE\ A10 CE\ DQ8 DQ7 DQ6 DQ5 DQ4 A7 A6 A5 A4 A3 A2 A1 A0 DQ1 5 6 7 8 9 10 11 12 13 29 28 27 26 25 24 23 22 21 WE \ A13 A8 A9 A11 OE \ A10 CE1\ DQ8 14 15 16 17 18 19 20 GENERAL DESCRIPTION The MT5C1008 SRAM employs high-speed, low power CMOS designs using a four-transistor memory cell, and are fabricated using double-layer metal, double-layer polysilicon technology. For design flexibility in high-speed memory applications, this device offers dual chip enables (CE1\, CE2) and output enable (OE\). These control pins can place the outputs in High-Z for additional flexibility in system design. All devices operate from a single +5V power supply and all inputs and outputs are fully TTL compatible. Writing to these devices is accomplished when write enable (WE\) and CE1\ inputs are both LOW and CE2 is HIGH. Reading is accomplished when WE\ and CE2 remain HIGH and CE1\ and OE\ go LOW. The devices offer a reduced power standby mode when disabled, allowing system designs to achieve low standby power requirements. The "L" version offers a 2V data retention mode, reducing current consumption to 1mA maximum. No. 111 No. 112 No. 207 No. 208 No. 303 No. 501 No. 507 *Electrical characteristics identical to those provided for the 45ns access devices. For more products and information please visit our web site at www.austinsemiconductor.com MT5C1008 Rev. 5.5 8/01 VCC A15 CE2 WE\ A13 A8 A9 A11 OE\ A10 CE\ DQ8 DQ7 DQ6 DQ5 DQ4 32-Pin Flat Pack (F) MARKING * Timing 12ns access 15ns access 20ns access 25ns access 35ns access 45ns access 55ns access 70ns access 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 DQ2 DQ3 VSS DQ4 DQ5 DQ6 DQ7 OPTIONS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32-Pin LCC (EC) 32-Pin SOJ (DCJ) Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 1 SRAM MT5C1008 Austin Semiconductor, Inc. FUNCTIONAL BLOCK DIAGRAM VCC I/O CONTROL DQ8 ROW DECODER A A A A A A A A A GND 1,048,576-BIT MEMORY ARRAY DQ1 (LSB) CE1\ CE2 COLUMN DECODER (LSB) A A A A A A A A OE\ WE\ POWER DOWN NOTE: The two least significant row address bits (A8 and A6) are encoded using gray code. TRUTH TABLE MODE STANDBY STANDBY READ READ WRITE MT5C1008 Rev. 5.5 8/01 OE\ X X L H X CE1\ H X L L L CE2 X L H H H WE\ X X H H L DQ HIGH-Z HIGH-Z Q HIGH-Z D POWER STANDBY STANDBY ACTIVE ACTIVE ACTIVE Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 2 SRAM MT5C1008 Austin Semiconductor, Inc. *Stresses at or greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods will affect reliability. Refer to page 17 of this datasheet for a technical note on this subject. ** Junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow, and humidity. ABSOLUTE MAXIMUM RATINGS* Supply Voltage Range (Vcc)...............................-.5V to +6.0V Storage Temperature ....................................-65C to +150C Short Circuit Output Current (per I/O)..........................20mA Voltage on any Pin Relative to Vss................-.5V to Vcc+1 V Max Junction Temperature**.......................................+150C Power Dissipation .....................................................................1 W ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-55oC < TC < 125oC & -45oC to +85oC; VCC = 5.0V +10%) DESCRIPTION CONDITIONS SYM MIN MAX UNITS NOTES Input High (Logic 1) Voltage VIH 2.2 VCC+0.5 V 1 Input Low (Logic 0) Voltage VIL -0.5 0.8 V 1, 2 0V<VIN<VCC ILI -10 10 A Output(s) disabled 0V<VOUT<VCC ILO -10 10 A Output High Voltage IOH=-4.0mA VOH 2.4 Output Low Voltage IOL=8.0mA VOL Input Leakage Current Output Leakage Current PARAMETER Power Supply Current: Operating CONDITIONS 1 V 1 -12 -15 MAX -20 -25 -35 -45 250 180 150 140 135 125 mA 250 180 140 130 125 115 mA ISBT 25 25 25 25 25 25 mA ISBC 10 10 10 10 10 10 mA SYM CE\ < VIL; OE\, WE\, and CE2>VIH ICCSP VCC = MAX, f = MAX = 1/tRC (MIN) Output Open *L version only ICCLP * Power Supply Current: Standby 0.4 V UNITS NOTES 3 CE\=VIH, CE2=VIL; Other Inputs at <VIL, >VIH, VCC = MAX f = 0 Hz CE\ > VCC -0.2V; VCC = MAX VIL < VSS -0.2V VIH > VCC -0.2V; F = 0 Hz CAPACITANCE DESCRIPTION Input Capacitance (A0-A16) Output Capacitance Input Capacitance (CE\, WE\, OE\) MT5C1008 Rev. 5.5 8/01 CONDITIONS o TA = 25 C, f = 1MHz VCC = 5V SYM MAX UNITS NOTES CI 12 pF 4 CO 14 pF 4 CI 20 pF 4 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 3 SRAM MT5C1008 Austin Semiconductor, Inc. ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (Note 5) (-55oC < TC < 125oC & -40oC to +85oC; VCC = 5.0V +10%) DESCRIPTION READ CYCLE READ cycle time Address access time Chip Enable access time Output hold from address change Chip Enable to output in Low-Z Chip disable to output in High-Z Output Enable access time Output Enable to output in Low-Z Output disable to output in High-Z WRITE CYCLE WRITE cycle time Chip Enable to end of write Address valid to end of write Address setup time Address hold from end of write WRITE pulse width Data setup time Data hold time Write disable to output in Low-Z Write Enable to output in High-Z MT5C1008 Rev. 5.5 8/01 -12 -15 -20 -25 -35 -45 SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES tRC tAA tACE tOH tLZCE tHZCE tAOE tLZOE tHZOE 12 tWC tCW tAW tAS tAH tWP tDS tDH 12 11 11 0 0 11 8 0 5 tLZWE tHZWE 15 12 12 3 3 20 15 15 3 3 7 7 0 3 3 7 7 0 7 3 3 0 15 12 12 0 0 12 8 0 5 3 3 0 20 ns ns ns ns ns ns ns ns ns ns 3 3 0 20 20 0 15 35 25 25 0 0 25 20 0 5 10 20 ns ns ns ns ns ns ns ns ns 45 45 15 15 10 25 20 20 0 0 20 15 0 5 9 45 35 35 10 10 8 20 15 15 0 0 15 10 0 5 7 35 25 25 8 7 7 7 25 20 20 45 35 35 0 5 35 20 0 5 15 4, 6, 7 4, 6, 7 4, 6, 7 4, 6, 7 4, 6, 7 4, 6, 7 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 4 SRAM MT5C1008 Austin Semiconductor, Inc. +5V +5V AC TEST CONDITIONS 480 Input pulse levels ................................... Vss to 3.0V Input rise and fall times ....................................... 5ns Input timing reference levels ............................. 1.5V Output reference levels ..................................... 1.5V Output load .............................. See Figures 1 and 2 Q 30 255 480 Q Fig. 1 Output Load Equivalent 7. NOTES 1. 2. 3. 4. 5. 6. All voltages referenced to VSS (GND). -2V for pulse width < 20ns ICC is dependent on output loading and cycle rates. The specified value applies with the outputs unloaded, and f = 1 Hz. t RC (MIN) This parameter is guaranteed but not tested. Test conditions as specified with the output loading as shown in Fig. 1 unless otherwise noted. t LZCE, tLZWE, tLZOE, t HZCE, tHZOE and tHZWE are specified with CL = 5pF as in Fig. 2. Transition is measured 200mV typical from steady state voltage, allowing for actual tester RC time constant. 8. 9. 10. 11. 12. 13. 5 pF 255 Fig. 2 Output Load Equivalent At any given temperature and voltage condition, t HZCE is less than tLZCE, and tHZWE is less than t LZWE and tHZOE is less than tLZOE. WE\ is HIGH for READ cycle. Device is continuously selected. Chip enables and output enables are held in their active state. Address valid prior to, or coincident with, latest occurring chip enable. t RC = Read Cycle Time. CE2 timing is the same as CE1\ timing. The waveform is inverted. Chip enable (CE1\, CE2) and write enable (WE\) can initiate and terminate a WRITE cycle. DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only) DESCRIPTION SYMBOL CONDITIONS VCC for Retention Data MIN 2 VDR MAX --- UNITS NOTES V CE\ > (VCC - 0.2V) Data Retention Current VIN > (VCC - 0.2V) or < 0.2V, f=0 VCC = 2V Chip Deselect to Data Retention Time Operation Recovery Time ICCDR tCDR 0 tR tRC 1.0 mA --- ns 4 ns 4, 11 LOW Vcc DATA RETENTION WAVEFORM DATA RETENTION MODE VCC 4.5V VDR > 2V t t CDR MT5C1008 Rev. 5.5 8/01 CE1\ VIH VIL CE2 VIH VIL 1234 123456789 123 123456789 123 1234 123456789 123 1234 123456789 123 1234 123456789 123 1234 123456789 123 1234 123456789 123 1234 123456789 123 1234 4.5V R VDR <VSS + 0.2V 12345678 1234 123 12345678 1234 123 12345678 1234 123 12345678 1234 123 12345678 1234 123 12345678 1234 123 12345678 1234 123 12345678 1234 123 123 123 123 123 DON'T CARE 1234 1234 1234 1234UNDEFINED Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 5 SRAM MT5C1008 Austin Semiconductor, Inc. READ CYCLE NO. 1 8, 9 tRC ADDRESS VALID tAA tOH DQ PREVIOUS DATA VALID DATA VALID READ CYCLE NO. 2 7, 8, 10, 12 tRC CE\ tAOE tHZOE tLZOE OE\ tLZCE tACE tHZCE DQ DATA VALID tPU tPD Icc MT5C1008 Rev. 5.5 8/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 6 SRAM MT5C1008 Austin Semiconductor, Inc. WRITE CYCLE NO. 1 12, 13 (Chip Enabled Controlled) tWC ADDRESS tAW tAH tAS tCW CE\ tWP1 WE\ tDS D tDH DATA VAILD Q HIGH Z WRITE CYCLE NO. 2 7, 12, 13 (Write Enabled Controlled) tWC ADDRESS tAW tAH tCW CE\ tAS tWP1 WE\ tDH D DATA VALID Q HIGH-Z NOTE: Output enable (OE\) is inactive (HIGH). MT5C1008 Rev. 5.5 8/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 7 SRAM MT5C1008 Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #111 (Package Designator C) SMD 5962-89598, Case Outline Z D S1 S2 A Q L1 Pin 1 L S e b b1 E NOTE 0o to 15o SYMBOL A b b1 c D E E1 e L L1 Q S S1 S2 NOTE: c E1 SMD SPECIFICATIONS MIN MAX --0.232 0.014 0.023 0.038 0.065 0.008 0.015 --1.700 0.350 0.405 0.390 0.420 0.100 BSC 0.125 0.200 0.150 --0.015 0.060 --0.100 0.005 --0.005 --Either configuration in detail A is allowed on SMD. *All measurements are in inches. MT5C1008 Rev. 5.5 8/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 8 SRAM MT5C1008 Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #112 (Package Designator CW) SMD 5962-89598, Case Outline X D A L L1 b e Pin 1 b1 E b2 E1 SYMBOL A b b1 b2 D E E1 e L L1 SMD SPECIFICATIONS MIN MAX 0.089 0.111 0.016 0.020 0.045 0.055 0.009 0.011 1.585 1.615 0.585 0.605 0.595 0.610 0.090 0.110 0.040 0.060 0.125 0.175 *All measurements are in inches. MT5C1008 Rev. 5.5 8/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 9 SRAM MT5C1008 Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #207 (Package Designator EC) SMD 5962-89598, Case Outline U See Detail A A L1 D L e b h x 45o Detail A E L2 b2 b1 SYMBOL A b b1 b2 D E e h L L1 L2 SMD SPECIFICATIONS MIN MAX 0.080 0.100 0.022 0.028 0.006 0.022 0.040 --0.800 0.840 0.392 0.408 0.050 BSC 0.012 REF 0.070 0.080 0.090 0.110 0.003 0.015 *All measurements are in inches. MT5C1008 Rev. 5.5 8/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 10 SRAM MT5C1008 Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #208 (Package Designator ECA) SMD 5962-89598, Case Outline M D1 A L1 e E1 E See Detail A L D b Detail A b2 b1 SYMBOL A b b1 b2 D D1 E E1 e L L1 SMD SPECIFICATIONS MIN MAX 0.060 0.120 0.022 0.028 0.004 0.014 0.040 0.050 0.442 0.458 0.300 BSC 0.540 0.560 0.400 BSC 0.050 BSC 0.045 0.055 0.075 0.095 *All measurements are in inches. MT5C1008 Rev. 5.5 8/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 11 SRAM MT5C1008 Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #303 (Package Designator F) SMD 5962-89598, Case Outline T E L Pin 1 Index e 32 1 17 16 D b Bottom View S S1 E1 Top View A c Q E2 E3 SYMBOL A b c D E E1 E2 E3 e L Q S S1 SMD SPECIFICATIONS MIN MAX 0.097 0.125 0.015 0.019 0.003 0.009 --0.830 0.400 0.420 --0.450 0.180 --0.030 --0.050 BSC 0.250 0.370 0.026 0.045 --0.045 0.000 --- *All measurements are in inches. MT5C1008 Rev. 5.5 8/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 12 SRAM MT5C1008 Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #501 (Package Designator DCJ) SMD 5962-89598, Case Outline 7 A e D D1 B1 E2 b E1 E A2 SYMBOL A A2 B1 b D D1 E E1 E2 e SMD SPECIFICATIONS MIN MAX 0.132 0.144 0.026 0.036 0.030 0.040 0.015 0.019 0.812 0.828 0.740 0.760 0.405 0.415 0.435 0.445 0.360 0.380 0.050 BSC *All measurements are in inches. MT5C1008 Rev. 5.5 8/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 13 SRAM MT5C1008 Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* See Detail A ASI Case #507 (Package Designator SOJ) SMD 5962-89598, Case Outline Y A1 j 1 32 1234567890123456789012345 1234567890123456789012345 1234567890123456789012345 1234567890123456789012345 1234567890123456789012345 1234567890123456789012345 B D1 B2 D B1 E2 e e2 e1 A2 Base Plane 17 A S 16 S1 B3 Seating Plane E E1 SYMBOL A A1 A2 B B1 B2 B3 D D1 E E1 E2 e e1 e2 j S S1 123 123123 123 123123 Detail A SMD SPECIFICATIONS MIN MAX 0.120 0.165 0.088 0.120 0.070 REF 0.010 REF .030R TYP 0.020 REF 0.025 0.045 0.816 0.838 0.75 REF 0.419 0.431 0.430 0.445 0.360 0.380 0.050 BSC 0.038 TYP 0.005 0.005 TYP 0.030 0.040 0.020 TYP *All measurements are in inches. MT5C1008 Rev. 5.5 8/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 14 SRAM MT5C1008 Austin Semiconductor, Inc. ORDERING INFORMATION EXAMPLE: MT5C1008CW-45/883C Device Package Speed Options** Process Number Type ns MT5C1008 C -12 L /* MT5C1008 CW -12 L /* MT5C1008 C -15 L /* MT5C1008 CW -15 L /* MT5C1008 C -20 L /* MT5C1008 CW -20 L /* MT5C1008 C -25 L /* MT5C1008 CW -25 L /* MT5C1008 C -35 L /* MT5C1008 CW -35 L /* MT5C1008 C -45 L /* MT5C1008 CW -45 L /* MT5C1008 C -55 L /* MT5C1008 CW -55 L /* MT5C1008 C -70 L /* MT5C1008 CW -70 L /* EXAMPLE: MT5C1008ECA-25L/XT Device Package Speed Options** Process Number Type ns MT5C1008 EC -12 L /* MT5C1008 ECA -12 L /* MT5C1008 EC -15 L /* MT5C1008 ECA -15 L /* MT5C1008 EC -20 L /* MT5C1008 ECA -20 L /* MT5C1008 EC -25 L /* MT5C1008 ECA -25 L /* MT5C1008 EC -35 L /* MT5C1008 ECA -35 L /* MT5C1008 EC -45 L /* MT5C1008 ECA -45 L /* MT5C1008 EC -55 L /* MT5C1008 ECA -55 L /* MT5C1008 EC -70 L /* MT5C1008 ECA -70 L /* EXAMPLE: MT5C1008F-25L/883C Device Package Speed Options** Process Number Type ns EXAMPLE: MT5C1008DCJ-35/IT Device Package Speed Options** Process Number Type ns MT5C1008 DCJ -12 L /* MT5C1008 SOJ -12 L /* MT5C1008 DCJ -15 L /* MT5C1008 SOJ -15 L /* MT5C1008 DCJ -20 L /* MT5C1008 SOJ -20 L /* MT5C1008 DCJ -25 L /* MT5C1008 SOJ -25 L /* MT5C1008 DCJ -35 L /* MT5C1008 SOJ -35 L /* MT5C1008 DCJ -45 L /* MT5C1008 SOJ -45 L /* MT5C1008 DCJ -55 L /* MT5C1008 SOJ -55 L /* MT5C1008 DCJ -70 L /* MT5C1008 SOJ -70 L /* MT5C1008 F -12 L /* MT5C1008 F -15 L /* MT5C1008 F -20 L /* MT5C1008 F -25 L /* MT5C1008 F -35 L /* MT5C1008 F -45 L /* MT5C1008 F -55 L /* MT5C1008 F -70 L /* *AVAILABLE PROCESSES IT = Industrial Temperature Range XT = Extended Temperature Range 883C = Full Military Processing -40oC to +85oC -55oC to +125oC -55oC to +125oC ** OPTIONS L = 2V Data Retention/Low Power MT5C1008 Rev. 5.5 8/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 15 SRAM Austin Semiconductor, Inc. ASI TO DSCC PART NUMBER CROSS REFERENCE ASI Package Designator C & CW ASI Part # MT5C1008 ASI Package Designator EC & ECA SMD Part # ASI Part # SMD Part # MT5C1008C-20/883C MT5C1008C-20L/883C MT5C1008C-25/883C MT5C1008C-25L/883C MT5C1008C-35/883C MT5C1008C-35L/883C MT5C1008C-45/883C MT5C1008C-45L/883C MT5C1008C-55/883C MT5C1008C-55L/883C MT5C1008C-70/883C MT5C1008C-70L/883C 5962-8959838MZA 5962-8959821MZA 5962-8959837MZA 5962-8959820MZA 5962-8959836MZA 5962-8959819MZA 5962-8959835MZA 5962-8959818MZA 5962-8959834MZA 5962-8959817MZA 5962-8959833MZA 5962-8959816MZA MT5C1008EC-20/883C MT5C1008EC-20L/883C MT5C1008EC-25/883C MT5C1008EC-25L/883C MT5C1008EC-35/883C MT5C1008EC-35L/883C MT5C1008EC-45/883C MT5C1008EC-45L/883C MT5C1008EC-55/883C MT5C1008EC-55L/883C MT5C1008EC-70/883C MT5C1008EC-70L/883C 5962-8959838MUA 5962-8959821MUA 5962-8959837MUA 5962-8959820MUA 5962-8959836MUA 5962-8959819MUA 5962-8959835MUA 5962-8959818MUA 5962-8959834MUA 5962-8959817MUA 5962-8959833MUA 5962-8959816MUA MT5C1008CW-20/883C MT5C1008CW-20L/883C MT5C1008CW-25/883C MT5C1008CW-25L/883C MT5C1008CW-35/883C MT5C1008CW-35L/883C MT5C1008CW-45/883C MT5C1008CW-45L/883C MT5C1008CW-55/883C MT5C1008CW-55L/883C MT5C1008CW-70/883C MT5C1008CW-70L/883C 5962-8959838MXA 5962-8959821MXA 5962-8959837MXA 5962-8959820MXA 5962-8959836MXA 5962-8959819MXA 5962-8959835MXA 5962-8959818MXA 5962-8959834MXA 5962-8959817MXA 5962-8959833MXA 5962-8959816MXA MT5C1008ECA-20/883C MT5C1008ECA-20L/883C MT5C1008ECA-25/883C MT5C1008ECA-25L/883C MT5C1008ECA-35/883C MT5C1008ECA-35L/883C MT5C1008ECA-45/883C MT5C1008ECA-45L/883C MT5C1008ECA-55/883C MT5C1008ECA-55L/883C MT5C1008ECA-70/883C MT5C1008ECA-70L/883C 5962-8959838MMA 5962-8959821MMA 5962-8959837MMA 5962-8959820MMA 5962-8959836MMA 5962-8959819MMA 5962-8959835MMA 5962-8959818MMA 5962-8959834MMA 5962-8959817MMA 5962-8959833MMA 5962-8959816MMA ASI Package Designator DCJ & SOJ ASI Package Designator F ASI Part # SMD Part # ASI Part # SMD Part # MT5C1008F-20/883C MT5C1008F-20L/883C MT5C1008F-25/883C MT5C1008F-25L/883C MT5C1008F-35/883C MT5C1008F-35L/883C MT5C1008F-45/883C MT5C1008F-45L/883C MT5C1008F-55/883C MT5C1008F-55L/883C MT5C1008F-70/883C MT5C1008F-70L/883C 5962-8959838MTA 5962-8959821MTA 5962-8959837MTA 5962-8959820MTA 5962-8959836MTA 5962-8959819MTA 5962-8959835MTA 5962-8959818MTA 5962-8959834MTA 5962-8959817MTA 5962-8959833MTA 5962-8959816MTA MT5C1008DCJ-20/883C MT5C1008DCJ-20L/883C MT5C1008DCJ-25/883C MT5C1008DCJ-25L/883C MT5C1008DCJ-35/883C MT5C1008DCJ-35L/883C MT5C1008DCJ-45/883C MT5C1008DCJ-45L/883C MT5C1008DCJ-55/883C MT5C1008DCJ-55L/883C MT5C1008DCJ-70/883C MT5C1008DCJ-70L/883C 5962-8959838M7A 5962-8959821M7A 5962-8959837M7A 5962-8959820M7A 5962-8959836M7A 5962-8959819M7A 5962-8959835M7A 5962-8959818M7A 5962-8959834M7A 5962-8959817M7A 5962-8959833M7A 5962-8959816M7A MT5C1008SOJ-20/883C MT5C1008SOJ-20L/883C MT5C1008SOJ-25/883C MT5C1008SOJ-25L/883C MT5C1008SOJ-35/883C MT5C1008SOJ-35L/883C MT5C1008SOJ-45/883C MT5C1008SOJ-45L/883C MT5C1008SOJ-55/883C MT5C1008SOJ-55L/883C MT5C1008SOJ-70/883C MT5C1008SOJ-70L/883C 5962-8959838MYA 5962-8959821MYA 5962-8959837MYA 5962-8959820MYA 5962-8959836MYA 5962-8959819MYA 5962-8959835MYA 5962-8959818MYA 5962-8959834MYA 5962-8959817MYA 5962-8959833MYA 5962-8959816MYA * ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD. MT5C1008 Rev. 5.5 8/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 16 SRAM Austin Semiconductor, Inc. MT5C1008 DATE: 2/6/01 Technical Note: 128Kx8 SRAM - Maximum Recommended Supply Voltage and Ambient Temperature Compliance: This product fully meets and is tested in compliance with SMD# 5962-89598 and tested in accordance with JESD78. Specific Product Affected: Die Manufacturer: Alliance Semiconductor Corporation Die Name: AS2008SA Device Types: MT5C1008 , MT5C1009 Speed Grades: All Package Designators: All Identifying Date Code Marking: Change implemented on product starting with date code 0100. Characteristic Identified: Austin Semiconductor, Inc. has received notification from this die vendor, Alliance Semiconductor Corp., that operation at high Vcc's of 6 volts and beyond may result in a latch-up condition. This can cause permanent damage to the device. Recommendation: During use in system applications and during manufacturing processes, including Burn-In and Test, the devices should not be subjected to Vcc Supply Voltages higher than 5.5Volts at 125C. MT5C1008 Rev. 5.5 8/01 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 17