© Semiconductor Components Industries, LLC, 2011
July, 2011 − Rev. 0
1Publication Order Number:
EMI5204MU/D
EMI5204MU, EMI5206MU,
EMI5208MU
Four-Six-Eight-Channel EMI
Filter with Integrated ESD
Protection
The EMI520xMU Series are a 4, 6, 8−channel (C−R−C) Pi−style
EMI filter array with integrated ESD protection. Its typical component
values of R = 100 and C = 7 pF deliver a cutoff frequency of 250
MHz and stop band attenuation greater than 20 dB from 800 MHz to
5.0 GHz.
This performance makes the part ideal for parallel interfaces with
data rates up to 167 Mbps in applications where wireless interference
must be minimized. The specified attenuation range is very effective
in minimizing interference from 2G/3G, GPS, Bluetooth® and
WLAN signals.
The EMI520xMU Series is available in the low−profile 4, 6, 8−lead,
0.5mm thick UDFN packages with 0.4mm lead pitch.
Features/Benefits
•±8.0 kV ESD Protection on each channel (IEC61000−4−2 Level 4,
Contact Discharge)
•R/C Values of 100 and 7 pF deliver Exceptional S21 Performance
Characteristics of 250 MHz f3dB and 20 dB Stop Band Attenuation
from 800 MHz to 5.0 GHz
•Integrated EMI/ESD System Solution in UDFN Package Offers
Exceptional Cost, System Reliability and Space Savings
•This is a Pb−Free Device
Applications
•EMI Filtering for LCD and Camera Data Lines
•EMI Filtering and Protection for I/O Ports and Keypads
Figure 1. Electrical Schematic Figure 2. Typical Insertion Loss Curve
See Table 1 for pin description
Cd = 7 pF Cd = 7 pF
R=100
Filter + ESDnFilter + ESDn
−40
−35
−30
−25
−20
−15
−10
−5
0
1E+6 10E+6 100E+6 1E+9 10E+9
FREQUENCY (Hz)
S21 (dB)
UDFN8
CASE 517BC
MARKING
DIAGRAMS
http://onsemi.com
UDFN12
CASE 517BD
UDFN16
CASE 517BE
1
854 MG
G
1
XX = Specific Device Code
M = Date Code
G= Pb−Free Package
(*Note: Microdot may be in either location)
1
12
1
56 MG
G
1
16
1
58 MG
G
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
EMI5204MU, EMI5206MU, EMI5208MU
http://onsemi.com
2
Figure 3. Pin Diagram
(Bottom View)
1234
8567
EMI5204MU
GND
123456
789101112
GND
EMI5208MU
12345678
910111213141516
GND
EMI5206MU
Table 1. FUNCTIONAL PIN DESCRIPTION
Filter Device Pins Description
EMI5204MU EMI5206MU EMI5208MU
Filter 1 1 & 8 1 & 12 1 & 16 Filter + ESD Channel 1
Filter 2 2 & 7 2 & 11 2 & 15 Filter + ESD Channel 2
Filter 3 3 & 6 3 & 10 3 & 14 Filter + ESD Channel 3
Filter 4 4 & 5 4 & 9 4 & 13 Filter + ESD Channel 4
Filter 5 5 & 8 5 & 12 Filter + ESD Channel 5
Filter 6 6 & 7 6 & 11 Filter + ESD Channel 6
Filter 7 7 & 10 Filter + ESD Channel 7
Filter 8 8 & 9 Filter + ESD Channel 8
Ground Pad GND GND GND Ground
MAXIMUM RATINGS
Parameter Symbol Value Unit
ESD Discharge IEC61000−4−2 Contact Discharge VPP 8.0 kV
Operating Temperature Range TOP −40 to 85 °C
Storage Temperature Range TSTG −55 to 150 °C
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds) TL260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter Symbol Test Conditions Min Typ Max Unit
Maximum Reverse Working Voltage VRWM 5.0 V
Breakdown Voltage VBR IR = 1.0 mA 6.0 7.0 8.0 V
Leakage Current IRVRWM = 3.3 V 100 nA
Resistance RAIR = 10 mA 85 100 115
Diode Capacitance CdVR = 2.5 V, f = 1.0 MHz 7.0 11 pF
Line Capacitance CLVR = 2.5 V, f = 1.0 MHz 14 22 pF
3 dB Cut−Off Frequency (Note 1) f3dB Above this frequency,
appreciable attenuation occurs
250 MHz
1. 50 source and 50 load termination.
EMI5204MU, EMI5206MU, EMI5208MU
http://onsemi.com
3
Theory of Operation
The EMI520x combines ESD protection and EMI
filtering conveniently into a small package for today’s size
constrained applications. The capacitance inherent to a
typical protection diode is utilized to provide the
capacitance value necessary to create the desired frequency
response based upon the series resistance in the filter. By
combining this functionality into one device, a large number
of discrete components are integrated into one small
package saving valuable board space and reducing BOM
count and cost in the application.
Application Example
The accepted practice for specifying bandwidth in a filter
is to use the 3 dB cutoff frequency. Utilizing points such as
the 6 dB or 9 dB cutoff frequencies results in signal
degradation in an application. This can be illustrated in an
application example. A typical application would include
EMI filtering of data lines in a camera or display interface.
In such an example it is important to first understand the
signal and its spectral content. By understanding these
things, an appropriate filter can be selected for the desired
application. A typical data signal is pattern of 1’s and 0’s
transmitted over a line in a form similar to a square wave.
The maximum frequency of such a signal would be the
pattern 1−0−1−0 such that for a signal with a data rate of
100 Mbps, the maximum frequency component would be
50 MHz. The next item to consider is the spectral content of
the signal, which can be understood with the Fourier series
approximation of a square wave, shown below in
Equations 1 and 2 in the Fourier series approximation.
From this it can be seen that a square wave consists of odd
order harmonics and to fully construct a square wave n must
go to infinity. However, to retain an acceptable portion of the
waveform, the first two terms are generally sufficient. These
two terms contain about 85% of the signal amplitude and
allow a reasonable square wave to be reconstructed.
Therefore, to reasonably pass a square wave of frequency x
the minimum filter bandwidth necessary is 3x. All
ON Semiconductor EMI filters are rated according to this
principle. Attempting to violate this principle will result in
significant rounding of the waveform and cause problems in
transmitting the correct data. For example, take the filter
with the response shown in Figure 4 and apply three
different data waveforms. To calculate these three different
frequencies, the 3 dB, 6 dB, and 9 dB bandwidths will be
used.
Equation 1:
x(t) +1
2)2
a
n+1ƪ1
2n *1sinǒ(2n *1)0tǓƫ(eq. 1)
Equation 2 (Simplified form of Equation 1):
x(t) +1
2)(eq. 2)
2
ƪsinǒ0tǓ
1)p20 sinǒ30tǓ
3)p20 sinǒ50tǓ
5)AAAƫ
MAGNITUDE
(dB)
FREQUENCY
(Hz)
100k 1M 100M 1G 10G10M
−3 dB
−6 dB
−9 dB
Figure 4. Filter Bandwidth
f1f2f3
From the above paragraphs it is shown that the maximum
supported frequency of a waveform that can be passed
through the filter can be found by dividing the bandwidth by
a factor of three (to obtain the corresponding data rate
multiply the result by two). The following table gives the
bandwidth values and the corresponding maximum
supported frequencies and the third harmonic frequencies.
EMI5204MU, EMI5206MU, EMI5208MU
http://onsemi.com
4
Table 2. FREQUENCY CHART
Bandwidth
Maximum
Supported
Frequency
Third
Harmonic
Frequency
3 dB − 100 MHz 33.33 MHz (f1)100 MHz
6 dB − 200 MHz 66.67 MHz (f2)200 MHz
9 dB − 300 MHz 100 MHz (f3)300 MHz
Considering that 85% of the amplitude of the square is in
the first two terms of the Fourier series approximation most
of the signal content is at the fundamental (maximum
supported) frequency and the third harmonic frequency. If a
signal with a frequency of 33.33 MHz is input to this filter,
the first two terms are sufficiently passed such that the signal
is only mildly affected, as is shown in Figure 5a. If a signal
with a frequency of 66.67 MHz is input to this same filter,
the third harmonic term is significantly attenuated. This
serves to round the signal edges and skew the waveform, as
is shown in Figure 5b. In the case that a 100 MHz signal is
input to this filter, the third harmonic term is attenuated even
further and results in even more rounding of the signal edges
as is shown in Figure 5c. The result is the degradation of the
data being transmitted making the digital data (1’s and 0’s)
more difficult to discern. This does not include effects of
other components such as interconnect and other path losses
which could further serve to degrade the signal integrity.
While some filter products may specify the 6 dB or 9 dB
bandwidths, actually using these to calculate supported
frequencies (and corresponding data rates) results in
significant signal degradation. To ensure the best signal
integrity possible, it is best to use the 3 dB bandwidth to
calculate the achievable data rate.
Input Waveform Output Waveform
a) Frequency = f1
b) Frequency = f2
c) Frequency = f3
Figure 5. Input and Output Waveforms of Filter
Input Waveform Output Waveform
Input Waveform Output Waveform
ORDERING INFORMATION
Device Package Shipping†
EMI5204MUTAG UDFN8
(Pb−Free)
3000 / Tape & Reel
EMI5206MUTAG UDFN12
(Pb−Free)
3000 / Tape & Reel
EMI5208MUTAG UDFN16
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
EMI5204MU, EMI5206MU, EMI5208MU
http://onsemi.com
5
PACKAGE DIMENSIONS
UDFN8, 1.7x1.35, 0.4P
CASE 517BC−01
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.25 mm FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
ÉÉÉ
ÉÉÉ
A
B
E
D
D2
E2
BOTTOM VIEW
b
e
8X
0.10 B
0.05
AC
C
K8X
NOTE 3
2X
0.10 C
PIN ONE
REFERENCE
TOP VIEW
2X
0.10 C
8X
A
A1
(A3)
0.05 C
0.05 C
CSEATING
PLANE
SIDE VIEW
L
8X 1
8
DIM MIN MAX
MILLIMETERS
A0.45 0.55
A1 0.00 0.05
A3 0.13 REF
b0.15 0.25
D1.70 BSC
D2 1.10 1.30
E1.35 BSC
E2 0.30 0.50
e0.40 BSC
K0.15 −−−
L0.20 0.30
DETAIL B
1.40
0.25
0.50
1.55
0.40 PITCH
DIMENSIONS: MILLIMETERS
0.40
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1
PACKAGE
OUTLINE
L1 −−− 0.05
8X
A1 A3
ÇÇ
ÇÇ
ÉÉ
DETAIL B
MOLD CMPD
EXPOSED Cu
ALTERNATE
CONSTRUCTIONS
DETAIL A
NOTE 4
e/2
L1
DETAIL A
L
ALTERNATE TERMINAL
CONSTRUCTIONS
L
RECOMMENDED
8X
EMI5204MU, EMI5206MU, EMI5208MU
http://onsemi.com
6
PACKAGE DIMENSIONS
UDFN12, 2.5x1.35, 0.4P
CASE 517BD−01
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.25 mm FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
ÉÉÉ
ÉÉÉ
A
B
E
D
D2
E2
BOTTOM VIEW
b
e12X
0.10 B
0.05
AC
C
K
NOTE 3
2X
0.10 C
PIN ONE
REFERENCE
TOP VIEW
2X
0.10 C
12X
A
A1
(A3)
0.05 C
0.05 C
CSEATING
PLANE
SIDE VIEW
L
12X
16
712
DIM MIN MAX
MILLIMETERS
A0.45 0.55
A1 0.00 0.05
A3 0.13 REF
b0.15 0.25
D2.50 BSC
D2 1.90 2.10
E1.35 BSC
E2 0.30 0.50
e0.40 BSC
K0.15 −−−
L0.20 0.30
2.20
12X
0.25
12X
0.50
1.55
0.40
DIMENSIONS: MILLIMETERS
0.40
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
RECOMMENDED
DETAIL B
ÇÇ
ÉÉ
ÉÉ
A1
A3
DETAIL B
MOLD CMPD
EXPOSED Cu
OPTIONAL
CONSTRUCTION
L1
DETAIL A
L
OPTIONAL
CONSTRUCTIONS
L
L1 −−− 0.05
NOTE 4
DETAIL A
PITCH
SOLDERING FOOTPRINT*
PACKAGE
OUTLINE
EMI5204MU, EMI5206MU, EMI5208MU
http://onsemi.com
7
PACKAGE DIMENSIONS
UDFN16, 3.3x1.35, 0.4P
CASE 517BE−01
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.25 mm FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
ÉÉÉ
ÉÉÉ
A
B
E
D
D2
E2
BOTTOM VIEW
b
e16X
0.10 B
0.05
AC
C
K
NOTE 3
2X
0.10 C
PIN ONE
REFERENCE
TOP VIEW
2X
0.10 C
16X
A
A1
(A3)
0.05 C
0.05 C
CSEATING
PLANE
SIDE VIEW
L
16X
18
916
DIM MIN MAX
MILLIMETERS
A0.45 0.55
A1 0.00 0.05
A3 0.13 REF
b0.15 0.25
D3.30 BSC
D2 2.70 2.90
E1.35 BSC
E2 0.30 0.50
e0.40 BSC
K0.15 −−−
L0.20 0.30
3.00
16X
0.25
16X
0.50
1.55
0.40
DIMENSIONS: MILLIMETERS
0.40
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
RECOMMENDED
DETAIL B
ÇÇ
ÉÉ
A1
A3
DETAIL B
MOLD CMPD
EXPOSED Cu
OPTIONAL
CONSTRUCTION
L1
DETAIL A
L
OPTIONAL
CONSTRUCTIONS
L
L1 −−− 0.05
NOTE 4
DETAIL A
PITCH
SOLDERING FOOTPRINT*
PACKAGE
OUTLINE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
EMI5204MU/D
Bluetooth is a registered trademark of Bluetooth SIG.
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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
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