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File Number 2780.4
1-888-INTERSIL or 321-724-7143 |Copyright © Intersil Corporation 2000
MUR8100E, RURP8100
8A, 1000V Ultrafast Diodes
The MUR8100E and RUR8100 are ultrafast diodes
(trr < 75ns) with soft recovery characteristics. They have a
low forward voltage drop and are of planar, silicon nitride
passivated, ion-implanted, epitaxial construction.
These devices are intended for use as energy steering/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and ultrafast recovery with soft recovery
characteristics minimize ringing and electrical noise in many
power switching circuits, thus reducing power loss in the
switching transistor.
Formerly developmental type TA09617.
Symbol
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . .<75ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supply
• Power Switching Circuits
• General Purpose
Packaging JEDEC TO-220AC
Ordering Information
PART NUMBER PACKAGE BRAND
MUR8100E TO-220AC MUR8100
RURP8100 TO-220AC RURP8100
NOTE: When ordering, use entire part number.
K
A
CATHODE
(FLANGE)
CATHODE
ANODE
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
MUR8100E
RURP8100 UNITS
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM 1000 V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRWM 1000 V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VR1000 V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV)
(TC = 155oC) 8A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IFRM
(Square Wave 20kHz) 16 A
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM
(Halfwave 1 Phase 60Hz) 100 A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD75 W
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAVL 20 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TSTG, TJ-55 to 175 oC
Data Sheet January 2000
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Electrical Specifications TC = 25oC, Unless Otherwise Specified.
SYMBOL TEST CONDITION MIN TYP MAX UNITS
VFIF = 8A - - 1.8 V
IF = 8A, TC = 150oC - - 1.5 V
IRVR = 1000V - - 100 µA
VR = 1000V, TC = 150oC - - 500 µA
trr IF = 1A - - 85 ns
IF = 8A, dIF/dt = 200A/µs - - 100 ns
taIF = 8A, dIF/dt = 200A/µs - 50 - ns
tbIF = 8A, dIF/dt = 200A/µs - 30 - ns
QRR IF = 8A, dIF/dt = 200A/µs - 500 - nC
CJVR = 10V, IF = 0A - 30 - pF
RθJC - - 2.0 oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time at dIF/dt = 100A/µs (See Figure 9), summation of ta+t
b.
ta = Time to reach peak reverse current at dIF/dt = 100A/µs (See Figure 9).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
QRR = Reverse recovery charge.
CJ = Junction Capacitance.
RθJC = Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
2 2.5
VF, FORWARD VOLTAGE (V)
IF, FORWARD CURRENT (A)
1
40
0.5
10
0 0.5 1 1.5
25oC
100oC
175oC
3
VR, REVERSE VOLTAGE (V)
0200 400 600 800
200
0.01
0.1
1
10
1000
0.001
25oC
100oC
175oC
IR, REVERSE CURRENT (µA)
MUR8100E, RURP8100
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FIGURE 3. trr,t
aAND tbCURVES vs FORWARD CURRENT FIGURE 4. trr,t
aAND tbCURVES vs FORWARD CURRENT
FIGURE 5. trr,t
aAND tbCURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Typical Performance Curves (Continued)
IF, FORWARD CURRENT (A)
0.5
0
80
20
81
40
60
t, RECOVERY TIMES (ns)
4
tb
100
trr
ta
TC = 25oC, dIF/dt = 200A/µs
ta
trr
tb
25
50
75
t, RECOVERY TIMES (ns)
IF, FORWARD CURRENT (A)
0
100
125
0.5 8
14
TC = 100oC, dIF/dt = 200A/µs
125
75
t, RECOVERY TIMES (ns)
IF, FORWARD CURRENT (A)
0
ta
50
150
trr
tb
25
100
0.5 814
TC = 175oC, dIF/dt = 200A/µs
2
0140 150 160 175165
4
6
8
TC, CASE TEMPERATURE (oC)
IF(AV), AVERAGE FORWARD CURRENT (A)
155
DC
SQ. WAVE
170145
VR, REVERSE VOLTAGE (V)
40
20
0
80
0 50 100 150 200
CJ, JUNCTION CAPACITANCE (pF)
100
60
MUR8100E, RURP8100
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All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Test Circuits and Waveforms
FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
RG
L
VDD
IGBT
CURRENT
SENSE
DUT
VGE t1
t2
VGE AMPLITUDE AND
t1 AND t2CONTROL IF
RG CONTROL dIF/dt
+
-
dt
dIF
IFtrr
tatb
0
IRM
0.25 IRM
DUT
CURRENT
SENSE +
LR
VDD
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)]
Q1= IGBT (BVCES > DUT VR(AVL))
-
VDD
Q1
I = 1A
L = 40mH
IV
t0t1t2
IL
VAVL
t
IL
MUR8100E, RURP8100
