D2SB80
800V 1.5A
Copyright & Copy;2001 Shindengen Electric Mfg.Co.Ltd
OUTLINE DIMENSIONS
Unit : mm
RATINGS
Case : 2S
SHINDENGEN
Thin Single In-Line Package
High IFSM
Applicable to Automatic Insertion
Switching power supply
Home Appliances, Office Equipment
Telecommunication, Factory Automation
FEATURES
APPLICATION
General Purpose Rectifiers SIL Bridges
@Absolute Maximum Ratings (If not specified Tl=25)
Item Symbol Conditions Ratings Unit
Storage Temperature
Tstg
-40`150
Operating Junction Temperature
Tj
150
Maximum Reverse Voltage
V
RM
800
V
Average Rectified Forward Current
I
O
50Hz sine wave, R-load, On glass-epoxy substrate, Ta=25
1.5
A
Peak Surge Forward Current I
50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25
80 A
Current Squared Time I
2
t
2mst10ms@Tj=25
32 A2s
@Electrical Characteristics (If not specified Tl=25)
Item Symbol Conditions Ratings Unit
Forward Voltage
V
F
I
F
=0.75A, Pulse measurement,Rating of per diode
Max.1.05
V
Reverse Current IR
V
R
=VRM, Pulse measurement,Rating of per diode
Max.10
ÊA
Thermal Resistance Æjl
junction to lead
Max.10
/W
Æja
junction to ambient
Max.47
Forward Voltage
00.2 0.4 0.6 0.8 1 1.2 1.4 1.6
0.1
1
10
D2SBx
Pulse measurement per diode
Tl=150°C [TYP]
Tl=25°C [TYP]
Forward Voltage VF [V]
Forward Current IF [A]
0
0.5
1
1.5
2
2.5
3
3.5
4
0 0.5 1 1.5 2
D2SBx Forward Power Dissipation
SIN
Average Rectified Forward Current IO [A]
Forward Power Dissipation PF [W]
Tj = 150°C
Sine wave
020 40 60 80 100 120 140 160
0
0.5
1
1.5
2
2.5
3
D2SBx Derating Curve
SIN
PCB
Ambient Temperature Ta [°C]
Average Rectified Forward Current IO [A]
Glass-epoxy substrate
Soldering land 3mmφ
Sine wave
R-load
Free in air
Peak Surge Forward Capability
0
20
40
60
80
100
120
110 100
D2SBx
2 5 20 50
IFSM
10ms 10ms
1 cycle
Number of Cycles [cycles]
Peak Surge Forward Current IFSM
[A]
non-repetitive,
sine wave,
Tj=25°C before
surge current is applied