1. Product profile
1.1 General description
350 W LDMOS power transistor for S-band ra dar applications in the frequency range from
2.7 GHz to 2.9 GHz.
1.2 Features and benefits
High efficiency
Excellent ruggedness
Designed for S-band operation (2.7 GHz to 2.9 GHz)
Excellent thermal stability
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Internally matched for ease of use
Compliant to Directive 2002/95/EC, rega rd in g Re stri ctio n of Hazard ou s Sub stances
(RoHS)
1.3 Applications
S-band radar applications in the frequent range 2.7 GHz to 2.9 GHz
BLS7G2729L-350P;
BLS7G2729LS-350P
LDMOS S-band radar power transistor
Rev. 4 — 23 September 2013 Product data sheet
Table 1. Typical perform ance
Typical RF performance at Tcase =25
C; tp = 300
s;
= 10 %; IDq = 200 mA; in a class-AB
production test circuit.
Test signal f VDS PLGpDtrtf
(GHz) (V) (W) (dB) (%) (ns) (ns)
pulsed RF 2.7 to 2.9 32 350 13 50 8 5
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Product data sheet Rev. 4 — 23 September 2013 2 of 13
NXP Semiconductors BLS7G2729L(S)-350P
LDMOS S-band radar power transistor
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
[1] Continuous use at maximum temperature will affect the reliability. For details refer to the on-line MTF
calculator.
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
BLS7G2729L-350P (SOT539A)
1drain1
2drain2
3gate1
4gate2
5source [1]
BLS7G2729LS-350P (SOT539B)
1drain1
2drain2
3gate1
4gate2
5source [1]
5
12
43
4
35
1
2sym117
5
12
43
4
35
1
2sym117
Tabl e 3. Ordering informati on
Type number Package
Name Description Version
BLS7G2729L-350P - flanged balanced ceramic package; 2 mounting holes;
4 leads SOT539A
BLS7G2729LS-350P - earless flanged balanced ceramic package; 4 leads SOT539B
Table 4. Limiting va lu es
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Min Max Unit
VDS drain-source voltage - 65 V
VGS gate-source voltage 0.5 +11 V
Tstg storage temperature 65 +150 C
Tjjunction temperature [1] - 225 C
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Product data sheet Rev. 4 — 23 September 2013 3 of 13
NXP Semiconductors BLS7G2729L(S)-350P
LDMOS S-band radar power transistor
5. Thermal characteristics
6. Characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Zth(j-mb) transient thermal impedance from junction
to mounting base Tcase =85C; PL= 350 W
tp=100s; = 10 % 0.07 K/W
tp=200s; = 10 % 0.09 K/W
tp=300s; = 10 % 0.10 K/W
tp=100s; = 20 % 0.09 K/W
Table 6. DC charac teristics
Tj=25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown
voltage VGS =0V; I
D=2.2mA 65 - - V
VGS(th) gate-source threshold voltage VDS =10 V; I
D= 220 mA 1.5 1.9 2.3 V
IDSS drain leakage current VGS =0V; V
DS =28V--2.8A
IDSX drain cut-off current VGS =V
GS(th) +3.75 V;
VDS =10V -39-A
IGSS gate leakage current VGS =11V; V
DS = 0 V - - 280 nA
gfs forward transconductance VDS =10V; I
D=11.0A - 16.2 - S
RDS(on) drain-source on-state
resistance VGS =V
GS(th) + 3.75 V;
ID=7.7A - 0.065 -
Table 7. RF characteristics
Test signal: pulsed RF; tp = 300
s;
= 10 %; RF performance at VDS =32V; I
Dq = 200 mA;
Tcase =25
C; unless otherwise specified, in a class-AB production circuit.
Symbol Parameter Conditions Min Typ Max Unit
Gppower gain PL= 350 W 11 13 - dB
RLin input return loss PL= 350 W - 10 - dB
Ddrain efficiency PL= 350 W 46 50 - %
Pdroop(pulse) pulse droop power PL= 350 W - 0 0.5 dB
trrise time PL= 350 W - 8 50 ns
tffall time PL= 350 W - 5 50 ns
BLS7G2729L-350P_LS-350P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 23 September 2013 4 of 13
NXP Semiconductors BLS7G2729L(S)-350P
LDMOS S-band radar power transistor
7. Test information
7.1 Ruggedness in class-AB operation
The BLS7G2729L-350P and BLS7G2729LS-350P are capable of withstanding a load
mismatch corr es po nd in g to VSWR = 10 : 1 through all phases under the following
conditions: VDS =32V; I
Dq =200mA; P
L=350W; t
p = 300 s; = 10 %.
7.2 Impedance information
[1] Impedances are taken at a single halve of the push-pull transistor
Table 8. Typical impedance
f ZS[1] ZL[1]
GHz
2.7 2.8 j8.7 1.8 j5.1
2.8 3.9 j8.2 2.1 j5.4
2.9 4.8 j9.3 1.5 j5.7
Fig 1. Definitio n of tran sistor impedance
001aak544
gate 1
gate 2
drain 2
drain 1
Z
S
Z
L
BLS7G2729L-350P_LS-350P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 23 September 2013 5 of 13
NXP Semiconductors BLS7G2729L(S)-350P
LDMOS S-band radar power transistor
7.3 Test circuit information
Printed-Circuit Board (PCB): Rogers RO6006; r = 6.45 F/m; thickness = 0.635 mm; thickness copper plating = 35 m.
The vias can be used as a reference to place components.
The above layout shows the test circuit used to measure the devices in production. A more appropriate application
demonstration for specific customer needs can be provided. See Table 9 for list of components.
Fig 2. Component layout
%/6*/63
%/6*/63
5(9
5(9
&
5
&
&
5
5 5
&
&
&
&
&
&
&
&
&
DDD
Table 9. List of compone nts
See Figure 2 for component layout.
Component Description Value Remarks
C1, C2 SMD capacitor 4.7 F, 50 V
C5, C6 multilayer ceramic chip capacitor 12 pF ATC800A
C7, C8 multilayer ceramic chip capacitor 20 pF ATC800A
C9, C10 multilayer ceramic chip capacitor 12 pF ATC800A
C11, C1 2 multilayer ceramic chip capacitor 1 nF ATC700A
C13, C14 electrolytic capacitor 220 F, 63 V
R1, R2 SMD resistor 9.1 SMD 0805
R3, R4 SMD resistor 8 SMD 0805
BLS7G2729L-350P_LS-350P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 23 September 2013 6 of 13
NXP Semiconductors BLS7G2729L(S)-350P
LDMOS S-band radar power transistor
7.4 Graphical data
VDS =32V; I
Dq = 200 mA.
(1) f = 2.7 GHz
(2) f = 2.8 GHz
(3) f = 2.9 GHz
VDS =32V; I
Dq = 200 mA.
(1) f = 2.7 GHz
(2) f = 2.8 GHz
(3) f = 2.9 GHz
Fig 3. Power gain and drain efficiency as function of
output power; typical values Fig 4. Po wer gain and drain efficiency as function of
output power; typical values
VDS =32V; I
Dq = 200 mA; tp =300 s; =10%.
(1) f = 2.7 GHz
(2) f = 2.8 GHz
(3) f = 2.9 GHz
VDS =32V; I
Dq = 200 mA; tp = 300 s; =10%;
PL= 350 W.
Fig 5. Output power as a function of input power;
typical valu e s Fig 6. Drain efficiency as a function of frequency;
typical values
DDD
3/:
*S
*S
G%G%G%
Ș'
Ș'
*S
*S
Ș'
Ș'
DDD
3/G%P
*S
*S
G%G%G%
Ș'
Ș'
*S
*S
Ș'
Ș'
DDD
3L:
3/
3/
:::
DDD
I0+]
Ș'
Ș'
BLS7G2729L-350P_LS-350P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 23 September 2013 7 of 13
NXP Semiconductors BLS7G2729L(S)-350P
LDMOS S-band radar power transistor
VDS =32V; I
Dq = 200 mA; tp = 300 s; =10%;
PL= 350 W. VDS =32V; I
Dq = 200 mA; tp = 300 s; =10%;
PL= 350 W.
Fig 7. Power gain as a function of frequency; typical
values Fig 8. Input retu rn loss as a function of frequency;
typical values
DDD
I0+]
*S
*S
G%G%G%
DDD
I0+]
5/5/LQLQ
5/LQ
G%G%G%
BLS7G2729L-350P_LS-350P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 23 September 2013 8 of 13
NXP Semiconductors BLS7G2729L(S)-350P
LDMOS S-band radar power transistor
8. Package outline
Fig 9. Package outline SOT539A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT539A 12-05-02
10-02-02
0 5 10 mm
scale
p
AF
b
e
D
U2
L
H
Q
c
5
12
43
D1
E
A
w1AB
M M M
q
U1
H1
C
B
M M
w2C
E1
M
w3
UNIT A
mm
Db
11.81
11.56 0.18
0.10 31.55
30.94 13.72 9.53
9.27 17.12
16.10 10.29
10.03
4.7
4.2
ce U2
0.250.25 0.51
w3
35.56
qw
2
w1
F
1.75
1.50
U1
41.28
41.02
H1
25.53
25.27
p
3.30
3.05
Q
2.26
2.01
EE
1
9.50
9.30
inches 0.465
0.455 0.007
0.004 1.242
1.218
D1
31.52
30.96
1.241
1.219 0.540 0.375
0.365 0.674
0.634 0.405
0.395
0.185
0.165 0.0100.010 0.0201.400
0.069
0.059 1.625
1.615
1.005
0.995 0.130
0.120 0.089
0.079
0.374
0.366
H
3.48
2.97
0.137
0.117
L
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
Flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
BLS7G2729L-350P_LS-350P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 23 September 2013 9 of 13
NXP Semiconductors BLS7G2729L(S)-350P
LDMOS S-band radar power transistor
Fig 10. Package outline SOT539B
References
Outline
version European
projection Issue date
IEC JEDEC JEITA
SOT539B
sot539b_po
12-05-02
13-05-24
Unit(1)
mm max
nom
min
4.7
4.2
11.81
11.56
31.55
30.94
31.52
30.96
9.5
9.3
9.53
9.27
1.75
1.50
17.12
16.10
3.48
2.97
10.29
10.03 0.25
A
Dimensions
Earless flanged balanced ceramic package; 4 leads SOT539B
bc
0.18
0.10
DD
1EE
1e
13.72
FHH
1
25.53
25.27
LQ
2.26
2.01
U1
32.39
32.13
U2w2
0.25
inches max
nom
min
0.185
0.165
0.465
0.455
1.242
1.218
1.241
1.219
0.374
0.366
0.375
0.365
0.069
0.059
0.674
0.634
0.137
0.117
0.405
0.395 0.01
0.007
0.004 0.54 1.005
0.995
0.089
0.079
1.275
1.265 0.01
w3
0 5 10 mm
scale
c
E
Q
E1
e
H
L
b
H1
U1
U2
Dw2
w3
1 2
3 4
D
D
AF
D1
5
Note
1. millimeter dimensions are derived from the original inch dimensions.
BLS7G2729L-350P_LS-350P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 23 September 2013 10 of 13
NXP Semiconductors BLS7G2729L(S)-350P
LDMOS S-band radar power transistor
9. Handling information
10. Abbreviations
11. Revision history
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 10. Abbreviations
Acronym Description
ESD ElectroStatic Discharge
LDMOS Laterally Diffused Metal-Oxide Semiconductor
MTF Median Time to Failure
S-band Short wave Band
SMD Surface-Mounted Device
VSWR Voltage Standing-Wave Ratio
Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLS7G2729L-350P_LS-350P v.4 20130923 Product data sheet - BLS7G2729L-350P_LS-350P v.3
Modifications: •The status of this document has been changed to Product data sheet.
•Table 1 on page 1: the table has been updated.
•Table 1 on page 1: the table has been updated.
•Table 4 on page 2: value VGS Max changed from +13 to +11.
•Figure 2 on page 5: notes have been updated.
•Table 9 on page 5: component C8 has been updated.
•Section 7.4 on page 6: figures have be en updated and added.
BLS7G2729L-350P_LS-350P v.3 20130712 Objective data sheet - BLS7G2729L-350P_LS-350P v.2
BLS7G2729L-350P_LS-350P v.2 20130506 Objective data sheet - BLS7G2729L-350P_LS-350P v.1
BLS7G2729L-350P_LS-350P v.1 20110524 Objective data sheet - -
BLS7G2729L-350P_LS-350P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 23 September 2013 11 of 13
NXP Semiconductors BLS7G2729L(S)-350P
LDMOS S-band radar power transistor
12. Legal information
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[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
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Characteristics sections of this document is not warranted. Constant or
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Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objecti ve specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] dat a sheet Production This document contains the product specification.
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Product data sheet Rev. 4 — 23 September 2013 12 of 13
NXP Semiconductors BLS7G2729L(S)-350P
LDMOS S-band radar power transistor
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13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BLS7G2729L(S)-350P
LDMOS S-band radar power transistor
© NXP B.V. 2013. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 23 September 2013
Document identi fier: BLS7G27 29L-350P_LS-3 50P
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 4
7.1 Ruggedness in class-AB operation . . . . . . . . . 4
7.2 Impedance information. . . . . . . . . . . . . . . . . . . 4
7.3 Test circuit information . . . . . . . . . . . . . . . . . . . 5
7.4 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 6
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
9 Handling information. . . . . . . . . . . . . . . . . . . . 10
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13 Contact information. . . . . . . . . . . . . . . . . . . . . 12
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
