TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0 09 4 Rev . 2 (1 0 15 7 2) Page 2 of 5
APPLICATIONS / BENEFITS
¾ Suppresses transients up to 1500 watts @ 10/1000 µs (see Figure 1)
¾ Clamps transient in less than 100 pico seconds
¾ Protection from switching transients and induced RF
¾ Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4
¾ Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:
Class 1: 1N5555 to 1N5558
Class 2 & 3: 1N5555 to 1N5557
Class 4: 1N5555 to 1N5556
¾ Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:
Class 1: 1N5555 to 1N5557
Class 2: 1N5555 to 1N5557
¾ Inherently radiation hard as described in Microsemi MicroNote 050
MAXIMUM RATINGS
¾ 1500 Watts for 10/1000 μs with repetition rate of 0.01% or less* at lead temperature (TL) 25oC (see Figs 1, 2, & 4)
¾ Operating & Storage Temperatures: -65o to +175oC
¾ THERMAL RESISTANCE: 50oC/W junction to lead at 0.375 inches (10 mm) from body or 110oC/W junction to
ambient when mounted on FR4 PC board with 4 mm2 copper pads (1oz) and track width 1 mm, length 25 mm
¾ DC Power Dissipation*: 1 Watt at TL = +25oC 3/8” (10 mm) from body (see derating in Fig 3)
¾ Forward surge current: 200 Amps for 8.3ms half-sine wave at TA = +25oC
¾ Solder Temperatures: 260 o C for 10 s (maximum)
MECHANICAL AND PACKAGING
¾ CASE: DO-13 (DO-202AA), welded, hermetically sealed metal and glass
¾ FINISH: All external metal surfaces are Tin-Lead plated and solderable per MIL-STD-750 method 2026
¾ POLARITY: Cathode connected to case and polarity indicated by diode symbol
¾ MARKING: Part number and polarity diode symbol
¾ WEIGHT: 1.4 grams. (Approx)
¾ TAPE & REEL option: Standard per EIA-296 (add “TR” suffix to part number)
¾ See package dimension on last page
* TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated
standoff voltage
(VWM) except for transients that briefly drive the device into avalanche breakdown (VBR to VC region).